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Infineon Technologies 5962F1120201QXA
- Part No.:
- 5962F1120201QXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-BFCPGA
- Datasheet:
-
5962F1120201QXA.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165CCGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,760
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Product details
Overview
5962F1120201QXA from Cypress Semiconductor is a radiation-hardened 72-Mbit QDR® II+ SRAM with RadStop™ technology, configured as 4 M × 18, operating at 250 MHz with DDR interfaces on independent read/write ports, 1.8-V core supply, and qualified for spaceflight applications requiring latch-up immunity ≥120 MeV·cm²/mg at 125 °C.
For engineers reviewing the 5962F1120201QXA datasheet, 5962F1120201QXA pinout, 5962F1120201QXA application, or 5962F1120201QXA equivalent, this device supports concurrent high-bandwidth memory access in radiation-intensive environments such as satellite command/data handling, onboard signal processors, and avionics flight computers where total ionizing dose tolerance (300 krad) and neutron fluence resilience (2.0 × 10¹⁴ n/cm²) are mission-critical.
Technical Context
The 5962F1120201QXA implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses rising-edge–only clocking on K/K# inputs and delivers two-word bursts per access with 2-cycle read latency when the DLL is enabled.
RadStop™ technology provides single-event latch-up immunity up to 120 MeV·cm²/mg at 125 °C and soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day under heavy-ion irradiation when paired with an external SECDED EDAC controller - a hardened design verified per MIL-PRF-38535 Class V screening flow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4 M × 18 organization) |
| Max Clock Frequency | 250 MHz - enables 1 Gbps per port (DDR at 500 Mbps effective) |
| Total Ionizing Dose | 300 krad(Si) - qualified for long-duration space missions |
| Latch-up Immunity | ≥120 MeV·cm²/mg at 125 °C - meets MIL-STD-883 Method 1019.8 |
| Neutron Fluence Tolerance | 2.0 × 10¹⁴ n/cm² - validated for low-earth orbit and deep-space environments |
| Core Supply Voltage | 1.8 V ±0.1 V - compatible with modern low-voltage ASIC/FPGA interfaces |
| I/O Interface Standard | HSTL Class I - ensures signal integrity at 500 Mbps with programmable drive strength |
Pinout & Package
5962F1120201QXA is housed in a 165-ball Ceramic Column Grid Array (CCGA) package measuring 21 × 25 × 2.83 mm, qualified per MIL-PRF-38535 Class V with hermetic sealing and full radiation screening.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K / K# | Input clocks | Rising-edge–triggered master clocks for read (K) and write (K#) address latching and DDR timing |
| CQ / CQ# | Echo clocks | Output-synchronized clocks aligned with Q[x:0] data edges to simplify high-speed capture in FPGA-based systems |
| RPS / WPS | Port select controls | Active-low synchronous enables for independent read/write port activation - supports depth expansion without external logic |
| BWS[1:0] | Byte write selects | Per-byte write masking for D[17:0]; BWS0 covers D[8:0], BWS1 covers D[17:9] - enables partial writes without read-modify-write cycles |
| Q[17:0] | Data outputs | Tristatable HSTL outputs delivering two 18-bit words per burst, edge-aligned with CQ/CQ# |
| D[17:0] | Data inputs | Synchronous DDR inputs sampled on both K and K# rising edges - supports concurrent 36-bit write bandwidth |
| QVLD | Valid data indicator | Asserted synchronously with valid Q[x:0] output - eliminates need for fixed delay-based data capture windows |
| TCK/TMS/TDI/TDO | JTAG interface | IEEE 1149.1-compliant boundary scan for testability and configuration verification in sealed modules |
Key Features
| Feature | Design Value |
|---|---|
| RadStop™ Radiation Hardening | Proprietary process and layout hardening enabling SEL immunity ≥120 MeV·cm²/mg and TID tolerance of 300 krad(Si) |
| Independent Read/Write Ports | Eliminates bus turnaround overhead - enables true concurrent R/W at full bandwidth without arbitration logic |
| Two-Word Burst + DDR | Delivers 1 Gbps per port (2 × 18-bit words @ 500 Mbps) - matches FPGA fabric bandwidth without glue logic |
| DLL-Assisted Timing | On-die delay lock loop achieves <±50 ps clock-to-data skew - simplifies PCB routing and timing closure in 250-MHz systems |
| HSTL I/O with ZQ Calibration | VDDQ = 1.4 V to 1.8 V support with on-die impedance calibration via ZQ pin - maintains signal integrity across voltage/temp variation |
Applications
| Spacecraft Onboard Computer | Satellite Payload Data Buffer |
|---|---|
Use Scenario: Real-time command execution and telemetry buffering in radiation-prone LEO orbits. IC Role / Device Role / Timing Role: High-reliability scratchpad memory interfacing directly with rad-hard PowerPC or LEON3 processor buses. Use Value: Concurrent R/W avoids pipeline stalls during simultaneous telemetry upload and command decode - sustaining >95% bus utilization under 300 krad accumulated dose. |
Use Scenario: Burst-mode image/video frame storage between sensor acquisition and downlink transmission. IC Role / Device Role / Timing Role: Dual-port buffer decoupling high-speed sensor interface (write port) from serial downlink transmitter (read port). Use Value: Two-word burst + echo clocks enable deterministic 500-Mbps data handoff to Xilinx RFSoC transceivers without FIFO synchronization logic. |
| Avionics Flight Control Unit | Radiation-Tolerant Signal Processor |
Use Scenario: Storing real-time sensor fusion results and actuator command histories in fly-by-wire systems. IC Role / Device Role / Timing Role: Deterministic latency memory supporting dual-lockstep CPU cores with synchronized read/write access. Use Value: 2-cycle DLL-enabled read latency and QVLD signaling guarantee sub-8-ns timing predictability - meeting DO-254 Level A timing assurance requirements. |
Use Scenario: Coefficient storage and intermediate result buffering in radar DSP chains exposed to cosmic rays. IC Role / Device Role / Timing Role: Radiation-hardened working memory for TI C66x or Analog Devices SHARC+ processors performing FFT and beamforming. Use Value: SECDED-compatible interface allows integration with external EDAC to achieve FIT <10⁻⁹ - satisfying ECSS-Q-ST-60-15C single-event upset mitigation mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-tolerant high-bandwidth SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CYRS1542AV18 | Commercial-grade version with identical pinout, timing, and architecture but unqualified per MIL-PRF-38535 Class V; no radiation screening or RadStop™ validation. | Restricted to ground-test prototyping or non-flight subsystems where TID <10 krad and SEL immunity not required. | Select only for cost-sensitive development platforms where radiation performance is not mission-critical. |
| IS61WV102418BLL-10TLI | Non-radiation-hardened 18-Mbit async SRAM; 10 ns access, single-port, 3.3-V core; no DDR, no QDR architecture or RadStop™. | Applicable only in benign terrestrial industrial control - lacks burst capability, radiation tolerance, or concurrent port support. | Not suitable for space or avionics use; consider only for legacy system drop-in where bandwidth and hardness are irrelevant. |
Compared with CYRS1542AV18 and IS61WV102418BLL-10TLI, 5962F1120201QXA uniquely delivers flight-qualified radiation hardness, true dual-port DDR bandwidth, and deterministic QDR II+ timing - making it the sole option for production spaceborne systems requiring concurrent high-throughput memory access under 300 krad TID exposure.
Availability
5962F1120201QXA is available at Aetrix Electronics and suitable for spacecraft onboard computers, satellite payload data buffers, and avionics flight control units requiring stable component supply under extended lead times and strict traceability.
Supply support for 5962F1120201QXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and interface ICs for aerospace, defense, and industrial applications, with expertise in radiation-hardened semiconductor processes.
This device belongs to Cypress's RadStop™ QDR II+ SRAM product line, engineered specifically for space-qualified systems demanding concurrent bandwidth, deterministic latency, and guaranteed single-event latch-up immunity in extreme radiation environments.
FAQ
What is the maximum allowable neutron fluence for 5962F1120201QXA?
The device is characterized to withstand 2.0 × 10¹⁴ neutrons/cm² without functional failure, as verified per MIL-STD-883 Method 1019.8. This fluence level corresponds to >15-year operation in geosynchronous orbit and qualifies the part for deep-space missions beyond Earth's magnetosphere.
Does 5962F1120201QXA require external termination resistors for HSTL I/O?
No - the device integrates programmable HSTL output drivers with on-die impedance calibration via the ZQ pin, eliminating external termination. VREF is internally generated from VDDQ, and all HSTL inputs meet Class I specifications without external bias networks.
Can the DLL be disabled, and what is the impact on read latency?
Yes, the DLL can be disabled via JTAG instruction. With DLL off, read latency increases from 2 cycles to 3 cycles, and clock-to-data skew rises from ±50 ps to ±150 ps - requiring tighter PCB routing and increased setup/hold margin in FPGA interfaces.
Is JTAG boundary scan supported in flight mode, or only during ground test?
JTAG is fully operational in flight mode and supports in-system verification of interconnect integrity and memory initialization status. The TAP controller remains active across all temperature and radiation conditions, with test vectors validated under 300 krad TID exposure per MIL-PRF-38535 screening.
5962F1120201QXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-BFCPGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 165-CCGA (21x25)
5962F1120201QXA FAQ
1.How can I place an order for 5962F1120201QXA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962F1120201QXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962F1120201QXA reliable?
The price and inventory of 5962F1120201QXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962F1120201QXA is usually 5 days.
3.What payment methods are accepted for 5962F1120201QXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962F1120201QXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5962F1120201QXA?
5962F1120201QXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962F1120201QXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962F1120201QXA?
For technical support, including 5962F1120201QXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962F1120201QXA requirements.
6.How does Aetrix verify that 5962F1120201QXA is sourced from the original manufacturer or authorized distributors?
All 5962F1120201QXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962F1120201QXA meets industry standards.
7.What is the process for return or replacement of 5962F1120201QXA?
All 5962F1120201QXA units undergo pre-shipment inspection (PSI). If there is an issue with 5962F1120201QXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962F1120201QXA part is unused and in its original packaging.
Return procedure for 5962F1120201QXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
5962F1120201QXA Tags
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