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Infineon Technologies 5962F1123501QXA
- Part No.:
- 5962F1123501QXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-CFlatPack
- Datasheet:
-
5962F1123501QXA.pdf
- Description:
- IC SRAM 4MBIT PAR 36CFLATPACK
- Quantity:
- Payment:
- Shipping:
Inventory:4,945
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Product details
Overview
CYRS1049DV33 from Cypress Semiconductor is a radiation-hardened 4-Mbit (512 K × 8) asynchronous CMOS static RAM with RadStop™ technology, designed for high-reliability military and space applications. It operates from –55 °C to +125 °C, delivers 12 ns access time, draws 95 mA active current at 3.3 V, and supports SEC-DED EDAC with soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day under heavy ion irradiation.
For engineers reviewing the CYRS1049DV33 datasheet, CYRS1049DV33 pinout, CYRS1049DV33 application, or CYRS1049DV33 equivalent, key selection criteria include total ionizing dose tolerance (300 krad), latch-up immunity (LET = 120 MeV·cm²/mg at 125 °C), ceramic 36-pin flat package compatibility, and QML-V qualification per MIL-PRF-38535.
Technical Context
The CYRS1049DV33 implements a fully asynchronous SRAM architecture with independent CE, OE, and WE controls enabling flexible read/write sequencing and seamless memory expansion. Its RadStop™ hardening integrates proprietary layout, process, and circuit-level techniques to suppress single-event effects while maintaining standard TTL-compatible I/O signaling and tri-state bus interface behavior.
It features automatic power-down when deselected (CE HIGH), dual standby current modes (ISB1/ISB2 = 15 mA), 2.0 V data retention capability, and robust latch-up immunity validated up to 140 mA injection current. The device uses a 19-bit address bus (A0–A18) and 8-bit bidirectional I/O bus (I/O0–I/O7) in a center-power/ground ceramic flat package optimized for thermal and EMI performance in harsh environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512 K × 8) - supports full-word parallel access without banking or interleaving overhead |
| Access time (tAA) | 12 ns - enables direct interfacing with 80 MHz microprocessors without wait states |
| Operating voltage | 3.3 V ± 0.3 V - compatible with standard LVCMOS-3.3 logic families and spacecraft power buses |
| Rad tolerance (TID) | 300 krad(Si) - qualified for long-duration missions in GEO, deep space, and nuclear environments |
| Soft error rate | ≤1 × 10⁻¹⁰ upsets/bit-day with SEC-DED - meets fault-tolerant computing requirements for avionics FDIR systems |
| Temperature range | –55 °C to +125 °C - validated across full military/space thermal profile without derating |
| Package | 36-pin ceramic flat - hermetically sealed, low-inductance center VCC/GND pinout for stable power delivery |
Pinout & Package
Package: 36-pin ceramic flat package (CFP), hermetically sealed, center VCC/GND configuration, compliant with MIL-STD-883.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting full 512 K-word decoding; no address multiplexing required |
| I/O0–I/O7 | Bidirectional data bus | 8-bit tri-state I/O lines; high-impedance during deselect, write, or OE HIGH |
| CE | Chip enable | Active-low global select; initiates automatic power-down when HIGH |
| OE | Output enable | Active-low output control; enables read data only when CE and OE are LOW and WE is HIGH |
| WE | Write enable | Active-low write strobe; latches input data on falling edge when CE is LOW |
| VCC | Power supply | Two dedicated pins (pins 31, 32) provide low-impedance 3.3 V supply path and reduce IR drop |
| GND | Ground | Two dedicated pins (pins 35, 36) ensure stable reference and minimize ground bounce |
| NC | No connect | Pins 1, 10, 14 - physically present but unconnected on die; must remain floating |
Key Features
| Feature | Design Value |
|---|---|
| Radiation hardening | RadStop™ technology provides TID hardness to 300 krad and LET immunity to 120 MeV·cm²/mg - eliminates need for external shielding or scrubbing in LEO/GEO orbits |
| QML-V certification | Fully qualified per MIL-PRF-38535 Class V flow with DLAM listing - satisfies DoD and NASA mission assurance requirements without additional screening |
| Low-power retention | 2.0 V data retention with ISB2 = 15 µA - enables battery-backed operation during spacecraft safe mode or power brownouts |
| Asynchronous interface | Independent CE/OE/WE timing allows glueless integration with FPGA, ASIC, and legacy microprocessor buses - no clock tree or synchronization logic required |
| Ceramic flat package | Hermetic 36-pin CFP with center power/ground - achieves θJC = 3.6 °C/W for reliable thermal management in conduction-cooled avionics chassis |
Applications
| Onboard Command & Data Handling (C&DH) | Satellite Payload Buffer Memory |
|---|---|
Use Scenario: Stores telemetry packets, command queues, and health monitoring logs in real time aboard LEO satellites. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between FPGA-based packet assembler and radiation-tolerant UART/SpaceWire interface. Use Value: 12 ns access time enables burst transfers at >80 MB/s; 300 krad tolerance ensures 15+ year mission lifetime without memory corruption. | Use Scenario: Buffers high-speed sensor data (e.g., hyperspectral imager frames) before compression and downlink. IC Role / Device Role / Timing Role: Frame buffer memory interfaced directly to image sensor controller FPGA using CE/OE/WE handshaking. Use Value: Dual VCC/GND pins and low 8 pF I/O capacitance minimize signal integrity degradation at 100+ MHz pixel clock rates. |
| Avionics Flight Control Computer | Nuclear Reactor Instrumentation & Control |
Use Scenario: Holds real-time flight control law coefficients and sensor fusion state vectors in triple-modular-redundant (TMR) processors. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory co-located with rad-hard MCU die in segregated memory subsystem. Use Value: SEC-DED EDAC support and ≤1 × 10⁻¹⁰ SER enable fault containment without software overhead - critical for DO-254 Level A compliance. | Use Scenario: Stores reactor trip setpoints, calibration tables, and diagnostic logs in safety-grade I&C cabinets exposed to gamma fields. IC Role / Device Role / Timing Role: Nonvolatile-configurable working memory for SIL-3 programmable logic controllers operating at 125 °C ambient. Use Value: Guaranteed operation at +125 °C with 15 mA standby current reduces cooling demand and improves cabinet thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-hardened SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV5128BLL-12MLI | Commercial-grade 4-Mbit SRAM; no radiation hardening; 12 ns access; 3.3 V; 44-pin TSOP-II | Lacks TID/LET qualification; unsuitable for space or nuclear environments | Select only for ground-test prototypes or non-safety-critical lab equipment where cost outweighs reliability |
| UT8FL0416M33 | Rad-hard 4-Mbit SRAM; 15 ns access; 3.3 V; 36-pin CFP; QML-Q qualified; higher SER (≤1 × 10⁻⁹) | Slower timing and looser SER spec; requires tighter EDAC implementation | Acceptable for short-duration missions (<5 years) where margin on access time is available |
Compared with IS61WV5128BLL-12MLI and UT8FL0416M33, the CYRS1049DV33 uniquely combines 12 ns speed, 300 krad TID, and sub-10⁻¹⁰ SER in a QML-V-certified 36-pin CFP - making it the only option for high-throughput, long-life, safety-critical spaceborne computing where deterministic timing and zero latent failure risk are mandatory.
Availability
CYRS1049DV33 is available at Aetrix Electronics and suitable for onboard command & data handling, satellite payload buffering, avionics flight control computers, and nuclear instrumentation requiring stable component supply across extended product lifecycles.
Supply support for CYRS1049DV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-reliability memory, PSoC, and programmable analog/digital solutions for aerospace, industrial, and automotive markets.
The CYRS1049DV33 belongs to Cypress's RadStop™ SRAM product line, engineered specifically for mission-critical systems where radiation-induced failures cannot be tolerated - including spacecraft, strategic defense platforms, and nuclear facility controls.
FAQ
What is the maximum neutron fluence rating for CYRS1049DV33?
The CYRS1049DV33 is rated for neutron fluence up to 2.0 × 10¹⁴ n/cm², verified per MIL-STD-883 Method 1019. This level corresponds to cumulative exposure expected over 15+ years in geosynchronous orbit or near-core nuclear instrumentation environments, with no observed parametric shift or functional failure.
Does CYRS1049DV33 support byte-write operations?
No, the CYRS1049DV33 does not support byte-write or partial-word writes. It operates exclusively in full 8-bit word mode: all eight I/O lines (I/O0–I/O7) are simultaneously written or read. Address lines A0–A18 decode 512 K discrete locations, each storing one 8-bit word; there is no internal byte-enable logic or mask functionality.
Can CYRS1049DV33 be operated at 2.5 V for lower power?
No. The device is specified only for 3.3 V ± 0.3 V operation (3.0 V to 3.6 V). Operation below 3.0 V violates DC electrical characteristics, risks data retention loss, and invalidates radiation performance claims. The 2.0 V data retention mode applies only during standby - not active operation - and requires CE HIGH and VCC ramped to 2.0 V after power-down initiation.
Is the 36-pin ceramic flat package lead-free?
Yes, the CYRS1049DV33 is available in a Pb-free 36-pin ceramic flat package, compliant with RoHS Directive 2011/65/EU and J-STD-609A Class 1 marking. The terminations use 100% matte tin plating over nickel underplate, qualified for solder reflow profiles up to 260 °C peak per JEDEC J-STD-020.
5962F1123501QXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 36-CFlatPack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 83 MHz
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-Ceramic FlatPack
5962F1123501QXA FAQ
1.How can I place an order for 5962F1123501QXA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962F1123501QXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962F1123501QXA reliable?
The price and inventory of 5962F1123501QXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962F1123501QXA is usually 5 days.
3.What payment methods are accepted for 5962F1123501QXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962F1123501QXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5962F1123501QXA?
5962F1123501QXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962F1123501QXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962F1123501QXA?
For technical support, including 5962F1123501QXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962F1123501QXA requirements.
6.How does Aetrix verify that 5962F1123501QXA is sourced from the original manufacturer or authorized distributors?
All 5962F1123501QXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962F1123501QXA meets industry standards.
7.What is the process for return or replacement of 5962F1123501QXA?
All 5962F1123501QXA units undergo pre-shipment inspection (PSI). If there is an issue with 5962F1123501QXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962F1123501QXA part is unused and in its original packaging.
Return procedure for 5962F1123501QXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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