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Renesas 6116LA120DB
- Part No.:
- 6116LA120DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA120DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,981
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Product details
Overview
6116LA120DB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 120ns maximum access time, TTL-compatible I/O, and military-grade (-55°C to +125°C) operation in a 24-pin ceramic DIP (CD24) package. It supports battery backup data retention at 2V and delivers standby current as low as 0.1mA under CMOS-level chip select.
For engineers reviewing the 6116LA120DB datasheet, 6116LA120DB pinout, 6116LA120DB application, or 6116LA120DB equivalent, this device is selected for high-reliability embedded systems requiring non-refreshed memory, extended temperature operation, and ultra-low standby power in legacy military avionics, industrial controllers, and space-constrained instrumentation.
Technical Context
This SRAM uses fully static asynchronous architecture-no clocks or refresh cycles required-and features dual standby modes: TTL-level (ISB = 40mA max) and CMOS-level (ISB1 = 0.1mA typ) for system-level power optimization. Its address/data bus is directly TTL-compatible, eliminating level-shifting needs in mixed-logic designs.
The device implements a 128 × 128 memory array with integrated address decoder, I/O control, and input data circuitry. Data retention at 2V (LA version only) enables seamless battery backup during main power loss, validated across full military temperature range without external support circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), enabling byte-wide data access without multiplexing |
| Access Time (tAA) | 120ns max at VCC = 5.0V ±10%, defining worst-case read latency in synchronous timing budgets |
| Supply Voltage | 4.5V–5.5V, compatible with standard 5V TTL/CMOS logic rails |
| Data Retention Voltage | 2.0V min (LA version only), allowing operation from single-cell lithium or backup coin cell |
| Standby Current (ISB1) | 0.1mA typical at VCC = 5.5V, CMOS-level CS, enabling multi-year battery life in maintenance-free systems |
| Operating Temperature | -55°C to +125°C, qualified per MIL-STD-883 Class B for mission-critical environments |
| Input/Output Compatibility | TTL-compatible VIH/VIL thresholds (2.2V/0.8V), ensuring direct interface with legacy 5V microcontrollers and FPGAs |
Pinout & Package
6116LA120DB is housed in a 24-pin ceramic dual in-line package (CD24, 600-mil width), designed for high-reliability, hermetically sealed applications with thermal stability and radiation tolerance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K locations; no address multiplexing required |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path supporting simultaneous read/write; high-impedance when deselected |
| CS | Chip Select | Active-low enable controlling standby entry (TTL or CMOS level) and bus isolation |
| WE | Write Enable | Active-low signal qualifying write cycles; overlaps with CS to initiate memory write |
| OE | Output Enable | Active-low control for output drivers; allows read data gating independent of CS |
| VCC | Power Supply | +5V supply pin; decoupling required within 10mm for stable 120ns timing |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates at 2.0V with ≤0.5µA retention current, enabling >10-year backup from CR2032 cells |
| Zero-refresh static architecture | Eliminates external refresh controller, DRAM timing constraints, and associated PCB routing complexity |
| MIL-STD-883 Class B compliance | Qualified for shock, vibration, temperature cycling, and hermeticity-required for flight-critical hardware |
| Two-tier standby power mode | Reduces system power by >99% vs active mode via ISB1 = 0.1mA (CMOS-level CS) or ISB = 40mA (TTL-level CS) |
| Alpha-particle soft-error immunity | CMOS process minimizes single-event upsets-critical for aerospace and nuclear instrumentation |
Applications
| Avionics Data Logging | Military Radar Buffer Memory |
|---|---|
Use Scenario: Storing real-time sensor telemetry in airborne black-box recorders during power interruption. IC Role / Device Role / Timing Role: Non-volatile buffer holding 2KB of flight parameters with automatic 2V battery switchover. Use Value: Guarantees data integrity across full -55°C to +125°C range without refresh or external supervision circuitry. | Use Scenario: Capturing pulse-Doppler radar returns in missile guidance subsystems where EMI and thermal stress are extreme. IC Role / Device Role / Timing Role: High-reliability, low-jitter SRAM interfacing directly to analog-to-digital converters and FPGA processing blocks. Use Value: 120ns access ensures deterministic timing alignment between RF sampling and digital beamforming stages. |
| Industrial PLC Configuration Storage | Spacecraft Onboard Instrumentation |
Use Scenario: Preserving programmable logic controller configuration and calibration tables during brownouts. IC Role / Device Role / Timing Role: Battery-backed memory retaining critical firmware parameters during extended AC loss events. Use Value: 0.1mA CMOS standby current extends backup battery life beyond 5 years in unattended deployments. | Use Scenario: Storing housekeeping telemetry in satellite star trackers exposed to vacuum and radiation. IC Role / Device Role / Timing Role: Radiation-tolerant, hermetically sealed memory for autonomous attitude determination subsystems. Use Value: MIL-STD-883 Class B qualification and alpha-particle immunity ensure >10⁶ hours MTBF in LEO orbit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-120TQLI | 3.3V-only supply, 256K × 16 organization, 120ns access, SOIC-44 package | Requires voltage translation for 5V systems; larger density but wider bus increases FPGA pin count | Select when upgrading to 3.3V systems and higher memory capacity is needed; not drop-in compatible |
| AS6C1008-120ZIN | 5V supply, 128K × 8 organization, 120ns access, 28-pin SOIC package | Different pinout (28-pin vs 24-pin), no military temp grade, no 2V data retention | Use in commercial/industrial 5V systems where extended temperature and battery backup are not required |
Compared with IS61LV25616AL-120TQLI and AS6C1008-120ZIN, the 6116LA120DB uniquely combines military temperature range, 2V data retention, and 24-pin CDIP packaging-making it irreplaceable in legacy 5V avionics and defense platforms where form, fit, function, and qualification must match exactly.
Availability
6116LA120DB is available at Aetrix Electronics and suitable for avionics data logging, military radar buffering, industrial PLC configuration storage, and spacecraft onboard instrumentation requiring stable component supply across long production lifecycles.
Supply support for 6116LA120DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116LA series belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for military, aerospace, and industrial applications demanding extended temperature operation, radiation tolerance, and long-term obsolescence support.
FAQ
What is the maximum operating temperature range for the 6116LA120DB?
The 6116LA120DB is rated for -55°C to +125°C operation and is manufactured in compliance with MIL-STD-883, Class B. This full military temperature range is confirmed in the Absolute Maximum Ratings table and supported by characterization across all electrical parameters-including access time, standby current, and data retention-at both extremes.
Does the 6116LA120DB support true data retention at 2V, and under what conditions?
Yes, the 6116LA120DB supports guaranteed data retention at 2.0V (VDR = 2.0V min), as specified in the Data Retention Characteristics table. This applies only to LA versions, requires CS > VHC, and is validated over the full -55°C to +125°C range with ICCDR ≤ 0.5µA (typical) at 2.0V.
What package type is used for the 6116LA120DB, and is it hermetically sealed?
The 6116LA120DB uses a 24-pin ceramic dual in-line package (CD24, 600-mil width), explicitly listed in the Ordering Information table. Ceramic DIP packages are inherently hermetically sealed, satisfying MIL-STD-883 requirements for moisture resistance and long-term reliability in harsh environments.
Can the 6116LA120DB be interfaced directly with 5V TTL logic without level shifters?
Yes, the 6116LA120DB features fully TTL-compatible inputs and outputs: VIH = 2.2V min, VIL = 0.8V max, VOH ≥ 2.4V at -4mA, and VOL ≤ 0.4V at 8mA. These values meet standard 5V TTL specifications, enabling direct connection to legacy microcontrollers, FPGAs, and peripheral ICs.
How does the standby power consumption of the 6116LA120DB compare between TTL-level and CMOS-level chip select?
The 6116LA120DB offers two standby modes: ISB = 40mA max (TTL-level CS > VIH) and ISB1 = 0.1mA typical (CMOS-level CS > VHC). The latter reduces power by >99% versus active operation (ICC1 = 85mA max), making it ideal for battery-backed systems where ultra-low quiescent current is mandatory.
6116LA120DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 120ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA120DB FAQ
1.How can I place an order for 6116LA120DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA120DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA120DB reliable?
The price and inventory of 6116LA120DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA120DB is usually 5 days.
3.What payment methods are accepted for 6116LA120DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA120DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA120DB?
6116LA120DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA120DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA120DB?
For technical support, including 6116LA120DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA120DB requirements.
6.How does Aetrix verify that 6116LA120DB is sourced from the original manufacturer or authorized distributors?
All 6116LA120DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA120DB meets industry standards.
7.What is the process for return or replacement of 6116LA120DB?
All 6116LA120DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA120DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA120DB part is unused and in its original packaging.
Return procedure for 6116LA120DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA120DB Tags
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AT24C02C-XHM-T
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