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Renesas 6116LA120TDB
- Part No.:
- 6116LA120TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116LA120TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,140
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Product details
Overview
6116LA120TDB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 120ns access time, TTL-compatible I/O, and battery backup data retention down to 2V. It operates across military temperature range (–55°C to +125°C), features automatic standby mode on chip select high, and is housed in a 24-pin ceramic DIP (SD24) package. Used in avionics control modules requiring non-refreshed memory with extended data hold.
For engineers reviewing the 6116LA120TDB datasheet, 6116LA120TDB pinout, 6116LA120TDB application, or 6116LA120TDB equivalent, key selection criteria include military-grade reliability, 2V data retention capability, 120ns read cycle timing, CMOS-level standby current of 0.1mA, and compatibility with legacy 5V TTL bus systems.
Technical Context
This device implements fully static asynchronous architecture-no clocks or refresh cycles required. Its control logic uses CS/WE/OE three-state decoding to manage read, write, and high-impedance modes, with tRC = 120ns and tAA = 120ns guaranteed over full military temperature range.
The LA variant integrates optimized power gating: ISB1 (full CMOS standby) draws only 0.1mA at VCC = 5.5V, and data retention current (ICCDR) is 0.5μA typical at 2.0V, enabling operation from backup batteries in mission-critical holdover scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), sufficient for small real-time firmware stacks or sensor buffer storage |
| Access Time (tAA) | 120ns max at –55°C to +125°C - defines minimum CPU wait state insertion |
| Data Retention Voltage | 2.0V min - enables direct connection to lithium thionyl chloride or coin-cell backup without regulator |
| Standby Current (ISB1) | 0.1mA max at VCC = 5.5V - reduces system quiescent power by >95% vs active mode |
| Operating Voltage | 4.5V–5.5V - compatible with standard 5V logic rails and legacy industrial power supplies |
| Input Compatibility | TTL-level inputs (VIH = 2.2V, VIL = 0.8V) - interfaces directly with 74LS/ALS families without level shifters |
| Package | 24-pin ceramic DIP (SD24), 300-mil width - supports through-hole mounting in ruggedized military PCBs |
Pinout & Package
Package: 24-pin ceramic dual in-line package (CERDIP), SD24 footprint per Renesas ordering code, 300-mil body width, hermetically sealed for MIL-STD-883 Class B compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus (2K depth); driven by microcontroller or FPGA address lines |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface; high-impedance when CS high or during write setup/hold |
| CS | Chip Select | Active-low enable; forces full standby (ISB1) when HIGH, critical for power sequencing |
| WE | Write Enable | Active-low write strobe; controls data latch timing per tWP = 120ns min |
| OE | Output Enable | Active-low output gate; separates read path from bus contention in multi-device systems |
| VCC | Power Supply | +5V supply pin; decoupling capacitor required within 10mm per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground return; must be connected to low-impedance plane per military EMI requirements |
Key Features
| Feature | Design Value |
|---|---|
| 2V data retention | Enables seamless switchover to backup battery during main power loss without data corruption |
| CMOS-level standby (ISB1) | 0.1mA max draw allows >10-year holdover on CR2032 cells in cold-spare configurations |
| No refresh or clock required | Eliminates external refresh controller and timing circuitry, reducing BOM count and board area |
| MIL-STD-883 Class B compliance | Qualified for flight-critical avionics and ground-based radar systems per screening and test requirements |
| TTL-compatible I/O | Direct interface with legacy 8085/8086, Z80, and discrete logic without translation components |
Applications
| Avionics Flight Control Memory | Secure Communications Buffer |
|---|---|
Use Scenario: Stores real-time attitude correction coefficients and fault logs in airborne inertial navigation units. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical flight parameters during engine start-up transients and brownouts. Use Value: 2V data retention ensures parameter integrity across 500ms main power interruption; 120ns access supports 8MHz CPU bus timing. | Use Scenario: Holds encrypted key material and packet buffers in Type 1 cryptographic modules operating in harsh environments. IC Role / Device Role / Timing Role: Tamper-resilient memory element with zero-refresh operation and radiation-hardened CMOS process. Use Value: Eliminates periodic refresh-induced side-channel leakage; MIL-STD-883 qualification assures operation under shock/vibe per DO-160 Section 8. |
| Industrial PLC Configuration Storage | Tactical Radio Firmware Cache |
Use Scenario: Retains ladder logic configuration and I/O mapping tables in programmable logic controllers deployed in oilfield SCADA systems. IC Role / Device Role / Timing Role: Battery-backed configuration store interfacing with 8-bit microcontrollers via parallel bus. Use Value: 0.1mA ISB1 extends backup battery life to >15 years; ceramic DIP withstands thermal cycling from –40°C to +85°C ambient. | Use Scenario: Caches boot firmware and channelization tables in manpack radios subjected to rapid temperature shifts and vibration. IC Role / Device Role / Timing Role: High-reliability SRAM providing deterministic 120ns read latency for FPGA-based digital signal processors. Use Value: Hermetic SD24 package prevents moisture ingress at 95% RH; tRC = 120ns aligns with 8.33MHz synchronous bus clocks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV256AL-120TQLI | 3.3V-only supply, 256K × 8 organization, SOIC-32 package | Requires voltage translation and PCB redesign; higher density but incompatible voltage domain | Select only if migrating to 3.3V systems and needing larger memory footprint |
| AS6C4008-120TIN | 5V operation, same 2K × 8 size and 120ns speed, but plastic DIP (PDIP) not ceramic | Lacks MIL-STD-883 qualification and 2V data retention; unsuitable for extended holdover or military environments | Acceptable for commercial industrial use where cost and availability outweigh hermeticity needs |
Compared with IS61LV256AL-120TQLI and AS6C4008-120TIN, the 6116LA120TDB uniquely delivers military-qualified ceramic packaging, 2V data retention, and TTL compatibility in a drop-in replaceable 24-pin DIP form factor-critical for sustaining legacy defense electronics programs.
Availability
6116LA120TDB is available at Aetrix Electronics and suitable for avionics subsystems, secure comms hardware, industrial PLCs, and tactical radio designs requiring stable component supply across extended product lifecycles.
Supply support for 6116LA120TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116LA120TDB belongs to Renesas' legacy CMOS SRAM product line, designed specifically for high-reliability, long-lifecycle applications in defense, aerospace, and industrial control where refresh-free operation and extreme environmental tolerance are mandatory.
FAQ
What is the maximum operating temperature range for the 6116LA120TDB?
The 6116LA120TDB is rated for the military temperature range of –55°C to +125°C, verified per MIL-STD-883 Class B testing. This specification applies across all guaranteed AC and DC parameters including tAA = 120ns, ISB1 = 0.1mA, and VDR = 2.0V. The SD24 ceramic package contributes to thermal stability in high-temperature avionics enclosures where plastic packages would degrade.
Does the 6116LA120TDB require external refresh circuitry?
No, the 6116LA120TDB is a fully static RAM and requires no clocks or refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VCC remains within 4.5V–5.5V or falls to ≥2.0V in battery backup mode. This eliminates refresh controllers, timing generators, and associated PCB routing-reducing design complexity and failure points in safety-critical systems using the 6116LA120TDB.
What is the significance of the 'TDB' suffix in 6116LA120TDB?
The 'TDB' suffix in 6116LA120TDB denotes the SD24 package type: 24-pin ceramic DIP with 300-mil width and hermetic seal. Per Renesas ordering documentation, 'TDB' specifically identifies the military-grade ceramic DIP variant compliant with MIL-STD-883 Class B, distinguishing it from plastic DIP ('TPG') and SOIC ('SOG') versions. This package ensures mechanical robustness and moisture resistance essential for the 6116LA120TDB's target applications.
Can the 6116LA120TDB operate from a 2V backup supply without data loss?
Yes, the 6116LA120TDB guarantees data retention at VCC = 2.0V minimum, drawing only 0.5μA typical (up to 200μA max) in this mode. This allows direct connection to primary lithium batteries (e.g., LiSOCl₂) or supercapacitors without regulation. The 6116LA120TDB maintains stored contents for years under these conditions, making it ideal for cold-spare and fail-safe holdover functions in defense electronics.
Is the 6116LA120TDB pin-compatible with other 6116-series variants?
Yes, all 6116SA/LA variants-including 6116LA120TDB-share identical 24-pin SD24 pinout, address/data/control signal assignments, and electrical interface behavior. Differences are limited to speed grade (120ns), power profile (LA vs SA), and temperature grading (military). Thus, the 6116LA120TDB can replace faster or commercial-grade 6116 parts in existing layouts without PCB modification, provided timing margins accommodate the 120ns access.
6116LA120TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 120ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA120TDB FAQ
1.How can I place an order for 6116LA120TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA120TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA120TDB reliable?
The price and inventory of 6116LA120TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA120TDB is usually 5 days.
3.What payment methods are accepted for 6116LA120TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA120TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA120TDB?
6116LA120TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA120TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA120TDB?
For technical support, including 6116LA120TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA120TDB requirements.
6.How does Aetrix verify that 6116LA120TDB is sourced from the original manufacturer or authorized distributors?
All 6116LA120TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA120TDB meets industry standards.
7.What is the process for return or replacement of 6116LA120TDB?
All 6116LA120TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA120TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA120TDB part is unused and in its original packaging.
Return procedure for 6116LA120TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA120TDB Tags
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