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Renesas 6116LA150DB
- Part No.:
- 6116LA150DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA150DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,122
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Product details
Overview
6116LA150DB from Renesas Electronics is a 16K-bit (2K × 8) CMOS static RAM with military-grade temperature range (–55°C to +125°C), 150 ns maximum access time, TTL-compatible I/O, and 2V data retention capability. It operates at 5.0 V ±10%, consumes ≤0.9 mA in full standby mode, and is housed in a 24-pin 600 mil ceramic DIP (CD24) package for high-reliability embedded systems.
For engineers reviewing the 6116LA150DB datasheet, 6116LA150DB pinout, 6116LA150DB application, or 6116LA150DB equivalent, this device is selected for legacy avionics, ruggedized instrumentation, and radiation-tolerant control modules where long-term data retention under low-voltage battery backup and MIL-STD-883 Class B compliance are mandatory design requirements.
Technical Context
The 6116LA150DB implements fully static asynchronous operation-no clocks or refresh required-and uses advanced CMOS technology to eliminate alpha-particle soft errors. Its dual-mode power management includes TTL-level standby (ISB = 40 mA max) and CMOS-level full standby (ISB1 = 0.9 mA max), triggered by CS > VIH.
It features a 128 × 128 memory array with address decoding, I/O control, and input data circuitry. All 11 address lines (A0–A10), 8 bidirectional data lines (I/O0–I/O7), and control signals (CS, WE, OE) are directly TTL-compatible, enabling seamless integration into legacy 5 V logic systems without level translation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), supporting byte-wide data bus interfacing without external multiplexing |
| Access Time | 150 ns max (military grade, –55°C to +125°C), defining minimum cycle time for reliable read/write sequencing |
| Data Retention Voltage | 2.0 V min (LA version only), enabling operation from backup batteries during main power loss |
| Full Standby Current | 0.9 mA max at VCC = 5.5 V, enabling ultra-low-power hold mode for extended battery life |
| Supply Voltage | 4.5 V to 5.5 V, compatible with standard 5 V TTL/CMOS system rails |
| Operating Temperature | –55°C to +125°C, qualified per MIL-STD-883 Class B for mission-critical aerospace and defense platforms |
| I/O Compatibility | TTL-compatible inputs and outputs, eliminating need for interface buffers in mixed-logic designs |
Pinout & Package
Package: 24-pin 600 mil ceramic dual in-line package (CD24), hermetically sealed for moisture resistance and thermal stability in harsh environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path for read/write operations; high-impedance when disabled |
| CS | Chip Select | Active-low enable; forces device into standby when HIGH, reducing power consumption |
| WE | Write Enable | Active-low control determining write (LOW) vs. read/high-Z (HIGH) state of I/O bus |
| OE | Output Enable | Active-low signal gating output drivers; allows shared bus operation with other peripherals |
| VCC | Power Supply | +5 V supply rail; must be stable within ±10% for guaranteed timing and data integrity |
| GND | Ground Reference | Common return path for all signals and power; critical for noise immunity in high-density layouts |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clock or refresh circuitry required-simplifies system timing design and eliminates refresh overhead |
| Battery Backup Retention | Retains data at 2 V with ICCDR ≤ 30 µA (typ.), enabling years of backup operation on small lithium cells |
| MIL-STD-883 Class B Compliance | Fully tested to military screening standards including burn-in, temperature cycling, and hermeticity verification |
| Low Alpha-Particle Sensitivity | CMOS process minimizes soft error rate (SER), critical for avionics and space-qualified applications |
| TTL-Compatible I/O | Direct interface with legacy 5 V microcontrollers, FPGAs, and ASICs-no level shifters needed |
Applications
| Avionics Flight Control Memory | Rugged Industrial PLC Data Buffer |
|---|---|
Use Scenario: Stores real-time sensor calibration tables and flight control coefficients in airborne computers operating across –55°C to +125°C ambient. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data during engine start-up and power transitions. Use Value: 2 V data retention ensures firmware parameters survive auxiliary power loss; MIL-STD-883 qualification guarantees reliability under vibration and thermal shock. | Use Scenario: Holds I/O mapping and sequence logic state in programmable logic controllers deployed in oil-field drilling rigs. IC Role / Device Role / Timing Role: High-reliability static RAM providing deterministic read/write latency for deterministic scan-cycle execution. Use Value: 150 ns access time meets hard real-time I/O update deadlines; ceramic DIP package resists humidity and EMI in explosive atmospheres. |
| Military Communications Radio Cache | Space-Qualified Telemetry Buffer |
Use Scenario: Caches encryption keys and channel assignment tables in HF/VHF tactical radios subjected to rapid thermal transients. IC Role / Device Role / Timing Role: Secure, low-power memory node retaining cryptographic material during sleep modes between burst transmissions. Use Value: Full standby current ≤ 0.9 mA extends battery life; CMOS process suppresses single-event upsets in radiated environments. | Use Scenario: Buffers housekeeping telemetry packets prior to downlink in CubeSat payloads exposed to vacuum and cosmic radiation. IC Role / Device Role / Timing Role: Radiation-hardened-by-process (RHBP) SRAM storing health-monitoring data with zero refresh overhead. Use Value: Hermetic CD24 package prevents outgassing contamination; MIL-STD-883 screening validates survivability in launch vibration profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-15TQLI | 3.3 V supply, 15 ns access, 256K × 16 organization, SOIC-44 package | Targets modern low-voltage embedded systems; incompatible voltage and pinout | Select only if migrating to 3.3 V architecture with higher density and faster timing |
| AS6C4008-15ZIN | 5 V supply, 15 ns access, 512K × 8 organization, TSOP-32 package | Higher density and speed but lacks MIL-STD-883 qualification and 2 V retention | Use for commercial industrial upgrades where military screening and battery backup are not required |
Compared with IS61LV25616AL-15TQLI and AS6C4008-15ZIN, the 6116LA150DB uniquely delivers MIL-STD-883 Class B compliance, 2 V data retention, and ceramic DIP packaging-making it irreplaceable in legacy-mandated, safety-critical, or battery-backed military platforms.
Availability
6116LA150DB is available at Aetrix Electronics and suitable for avionics subsystems, ruggedized industrial controllers, military radio caches, and space telemetry buffers requiring stable component supply across extended product lifecycles.
Supply support for 6116LA150DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The IDT6116SA/LA family-now part of Renesas' legacy memory portfolio-was engineered for high-reliability, low-power, and radiation-resilient applications in aerospace, defense, and industrial control systems.
FAQ
What is the maximum operating temperature range for the 6116LA150DB?
The 6116LA150DB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B, making it suitable for extreme-environment applications such as jet engine control units and satellite payload electronics. This specification is verified through temperature cycling, burn-in, and parametric testing per military screening requirements-not just characterization.
Does the 6116LA150DB require a refresh circuit or clock signal?
No, the 6116LA150DB is a fully static RAM and requires no clock, refresh cycles, or external timing control. Its internal CMOS latches retain data indefinitely as long as VCC and data retention voltage (≥2 V) are maintained. This eliminates timing-critical refresh overhead in real-time systems and simplifies PCB layout.
What package type is used for the 6116LA150DB?
The 6116LA150DB is supplied in a 24-pin 600 mil ceramic dual in-line package (CD24), identified by Renesas package code "DB". This hermetically sealed ceramic DIP provides superior thermal stability, moisture resistance, and mechanical robustness compared to plastic variants-essential for long-term reliability in military deployments.
Can the 6116LA150DB retain data when main power is removed?
Yes-the 6116LA150DB supports true battery backup operation: when VCC drops below 2.0 V, it enters data retention mode drawing ≤30 µA (typ.) from a 2 V source. This enables multi-year data preservation in avionics black boxes or secure comms radios during primary power failure.
Is the 6116LA150DB pin-compatible with other 6116-series variants?
Yes-the 6116LA150DB shares identical pinout, signal definitions, and electrical interface with all IDT6116SA/LA family members in the same package (CD24), including 6116SA150DB. However, LA versions differ in standby current and data retention capability; SA versions lack 2 V retention and draw higher ISB1 (10 mA vs. 0.9 mA).
6116LA150DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 150ns
- Access Time:
- 150 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA150DB FAQ
1.How can I place an order for 6116LA150DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA150DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA150DB reliable?
The price and inventory of 6116LA150DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA150DB is usually 5 days.
3.What payment methods are accepted for 6116LA150DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA150DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA150DB?
6116LA150DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA150DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA150DB?
For technical support, including 6116LA150DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA150DB requirements.
6.How does Aetrix verify that 6116LA150DB is sourced from the original manufacturer or authorized distributors?
All 6116LA150DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA150DB meets industry standards.
7.What is the process for return or replacement of 6116LA150DB?
All 6116LA150DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA150DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA150DB part is unused and in its original packaging.
Return procedure for 6116LA150DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA150DB Tags
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24CS02-SSHM-T
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