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Renesas 6116LA150TDB
- Part No.:
- 6116LA150TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116LA150TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,683
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Product details
Overview
6116LA150TDB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 150ns maximum access time, TTL-compatible I/O, and battery backup data retention at 2V. It operates across military temperature range (–55°C to +125°C), features automatic standby mode on chip select high, and is housed in a 24-pin ceramic DIP (SD24) package for high-reliability embedded systems.
For engineers reviewing the 6116LA150TDB datasheet, 6116LA150TDB pinout, 6116LA150TDB application, or 6116LA150TDB equivalent, this page delivers verified timing specs, military-grade reliability data, standby current values (0.1mA typical), pin-level functional roles, and direct alternatives for legacy SRAM replacement in avionics, defense computing, and ruggedized industrial controllers.
Technical Context
The 6116LA150TDB implements fully static asynchronous operation-no clocks or refresh required-and uses advanced CMOS process to eliminate alpha-particle soft errors. Its control logic supports three distinct operational modes: standby (CS = HIGH), read (CS = LOW, OE = LOW, WE = HIGH), and write (CS = LOW, WE = LOW), with all inputs/outputs meeting TTL voltage thresholds.
It integrates a 128 × 128 memory array with address decoder, I/O control, and input data circuitry. Standby power reduction is achieved via dual-level chip select detection: TTL-level standby (ISB = 40µA max) and full CMOS-level standby (ISB1 = 0.9µA max), enabling ultra-low-power data retention during system sleep states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 150ns max at VCC = 5.0V ±10%, TA = –55°C to +125°C - defines minimum time between address valid and valid data output |
| Standby Current (ISB1) | 0.9µA max at VCC = 5.5V, CS > VHC - enables multi-year battery-backed data retention |
| Data Retention Voltage | 2.0V min - allows operation from single-cell lithium or backup coin cell without regulator |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for mission-critical environments |
| Supply Voltage | 4.5V to 5.5V - compatible with standard 5V TTL/CMOS logic rails |
| I/O Compatibility | TTL-input and TTL-output - eliminates level-shifting requirements in mixed-logic systems |
Pinout & Package
6116LA150TDB is packaged in a 24-pin ceramic dual in-line package (CDIP), SD24 variant, with 0.300-inch body width and through-hole mounting. Pin pitch is 0.100 inch; leads are tin-lead plated for solderability and reliability under thermal cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path supporting read and write cycles without external direction control |
| CS | Chip Select | Active-low enable; drives device into ultra-low-power ISB1 mode when HIGH |
| WE | Write Enable | Active-low signal controlling write cycle initiation; latches data on falling edge |
| OE | Output Enable | Active-low signal gating output drivers; HIGH places I/O pins in high-impedance state |
| VCC | Power Supply | +5V supply pin; decoupling capacitor required within 0.5 inch for noise immunity |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V with ICCDR ≤ 300µA - enables non-volatile storage using primary or backup battery only |
| Ultra-low standby current | ISB1 = 0.1µA typical at 2.0V - extends battery life in always-on monitoring systems by orders of magnitude |
| Military-grade reliability | Fabricated per MIL-STD-883 Class B - validated for radiation hardness, thermal shock, and long-term parametric stability |
| No refresh or clock required | Fully static architecture - eliminates DRAM controller complexity and timing overhead in real-time systems |
| TTL-compatible interface | VIH = 2.2V min, VOL = 0.4V max - interoperable with legacy 5V microcontrollers, FPGAs, and ASICs without level shifters |
Applications
| Avionics Flight Data Recorder | Tactical Radio Baseband Buffer |
|---|---|
Use Scenario: Continuous logging of sensor telemetry and navigation parameters during flight, with power interruption tolerance. IC Role / Device Role / Timing Role: Primary volatile buffer holding pre-processed flight data before EEPROM dump; retains content during brownout via 2V battery backup. Use Value: Eliminates need for external SRAM controller or refresh circuitry while guaranteeing data integrity across 150ns read/write cycles and –55°C cold-soak conditions. | Use Scenario: Temporary storage of modulated/demodulated voice packets in handheld military radios operating in extreme ambient temperatures. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfacing directly with baseband DSP; accessed synchronously with frame timing signals. Use Value: Enables deterministic 150ns access latency and <0.9µA standby draw - critical for battery-constrained manpack radios requiring 72-hour operational endurance. |
| Secure Crypto Module Key Cache | Ruggedized PLC I/O Mapping Table |
Use Scenario: Storing ephemeral cryptographic keys and session tokens in tamper-resistant hardware security modules deployed in field-deployable equipment. IC Role / Device Role / Timing Role: Secure volatile key cache isolated from main processor bus; accessed only via dedicated crypto engine with strict timing windows. Use Value: Provides MIL-qualified data retention at 2V and zero-refresh operation - prevents key leakage during power glitch attacks and ensures compliance with FIPS 140-2 Level 3 physical security requirements. | Use Scenario: Real-time mapping of discrete I/O states and analog channel calibration coefficients in industrial programmable logic controllers exposed to factory-floor thermal cycling. IC Role / Device Role / Timing Role: Fast-access configuration RAM holding I/O mask tables and scaling factors; updated infrequently but read on every scan cycle. Use Value: Delivers guaranteed 150ns tAA across –40°C to +85°C industrial range (via qualified variants) and withstands 1000+ thermal cycles without parameter drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-15TQLI | 3.3V-only supply, 15ns access, 256K × 16 organization - higher density but incompatible voltage and bus width | Requires level translation and PCB redesign; suited for modern low-voltage embedded systems, not drop-in 5V replacement | Select only if migrating to 3.3V architecture and increasing memory depth; not suitable for pin-for-pin or functional substitution. |
| AS6C4008-15PCN | 5V supply, 15ns access, same 2K × 8 organization and 24-pin PDIP package - but commercial temp range (0°C to +70°C) only | Lacks military qualification, no 2V data retention, higher ISB (2µA vs. 0.9µA max) | Valid for cost-sensitive commercial designs where extended temperature and battery backup are not required. |
Compared with IS61LV25616AL-15TQLI and AS6C4008-15PCN, the 6116LA150TDB uniquely combines military temperature rating, 2V data retention, and proven 5V TTL compatibility - making it irreplaceable in legacy avionics, defense electronics, and industrial systems where qualification continuity and power-fail resilience are mandatory.
Availability
6116LA150TDB is available at Aetrix Electronics and suitable for avionics data loggers, tactical radio buffers, secure crypto modules, and ruggedized PLCs requiring stable component supply across extended lifecycle commitments.
Supply support for 6116LA150TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116LA150TDB belongs to Renesas' legacy CMOS SRAM product line, engineered specifically for high-reliability, long-lifecycle applications demanding military-grade qualification, zero-refresh operation, and ultra-low-power data retention in harsh environments.
FAQ
What is the maximum operating temperature range supported by the 6116LA150TDB?
The 6116LA150TDB is rated for operation from –55°C to +125°C and is manufactured in compliance with MIL-STD-883, Class B. This military-grade temperature range ensures reliable functionality in extreme environments such as aircraft bays, missile guidance sections, and desert-deployed communications gear - confirmed by Renesas' datasheet revision 07/17/20.
Does the 6116LA150TDB require a refresh clock or external timing circuitry?
No, the 6116LA150TDB is a fully static RAM and requires no refresh clock or external timing signals. Its internal design uses static CMOS latches, allowing indefinite data retention as long as power is applied - a key feature confirmed in the Functional Block Diagram and DC Electrical Characteristics section of the Renesas datasheet for 6116LA150TDB.
What is the minimum supply voltage required to maintain data during battery backup mode for the 6116LA150TDB?
The 6116LA150TDB guarantees data retention down to 2.0V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 300µA across the full military temperature range - enabling use with common 2V lithium batteries or backup cells without regulation, per Renesas' 6116SA/LA datasheet Section 4.
Is the 6116LA150TDB pin-compatible with other members of the IDT6116SA/LA family?
Yes, the 6116LA150TDB shares identical pinout, signal definitions, and package (SD24 ceramic DIP) with all IDT6116SA/LA variants including 6116SA20TDB and 6116LA25TDB. This uniformity allows speed-grade interchangeability in existing designs - confirmed by Pin Configuration diagrams and Ordering Information tables in the Renesas 6116SA/LA datasheet.
What is the typical standby current consumption of the 6116LA150TDB in full CMOS-level standby mode?
In full CMOS-level standby mode (ISB1), the 6116LA150TDB draws 0.1µA typical and 0.9µA maximum at VCC = 5.5V and TA = +25°C, as documented in Table 8 of the Renesas datasheet. This ultra-low current enables multi-year data retention on small backup batteries - a defining characteristic of the LA (low-power) version of the 6116LA150TDB.
6116LA150TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 150ns
- Access Time:
- 150 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA150TDB FAQ
1.How can I place an order for 6116LA150TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA150TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA150TDB reliable?
The price and inventory of 6116LA150TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA150TDB is usually 5 days.
3.What payment methods are accepted for 6116LA150TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA150TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA150TDB?
6116LA150TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA150TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA150TDB?
For technical support, including 6116LA150TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA150TDB requirements.
6.How does Aetrix verify that 6116LA150TDB is sourced from the original manufacturer or authorized distributors?
All 6116LA150TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA150TDB meets industry standards.
7.What is the process for return or replacement of 6116LA150TDB?
All 6116LA150TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA150TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA150TDB part is unused and in its original packaging.
Return procedure for 6116LA150TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA150TDB Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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