Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 6116LA20SOGI

Part No.:
6116LA20SOGI
Manufacturer:
Renesas
Category:
Memory
Package:
24-SOIC (0.295", 7.50mm Width)
Datasheet:
Aetrix6116LA20SOGI.pdf
Description:
IC SRAM 16KBIT PARALLEL 24SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:300

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

6116LA20SOGI from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 20 ns access time, industrial temperature range (–40°C to +85°C), TTL-compatible I/O, and 2V data retention capability. It operates at 5.0 V ±10%, consumes ≤95 mA active current and only 0.1 µA in full standby mode, and is used in battery-backed memory subsystems for embedded controllers and instrumentation.

For engineers reviewing the 6116LA20SOGI datasheet, 6116LA20SOGI pinout, 6116LA20SOGI application, or 6116LA20SOGI equivalent, this page delivers verified timing specs (tAA = 20 ns, tRC = 20 ns), power modes (TTL/CMOS standby), retention voltage (2.0 V), package (24-pin SOIC), and industrial-grade reliability per MIL-STD-883 Class B compliance.

Technical Context

The 6116LA20SOGI implements fully static asynchronous operation-no clocks or refresh required-and uses high-reliability CMOS process to eliminate alpha-particle soft errors. Its control logic supports three distinct operational states: active read/write (CS = L, WE/OE controlled), TTL-level standby (CS = H, ISB = 35 mA), and CMOS-level full standby (CS > VHC, ISB1 = 0.1 µA).

Address decoding is internal (11-bit A0–A10), data path is bidirectional (I/O0–I/O7), and all inputs meet VIH ≥ 2.2 V / VIL ≤ 0.8 V at VCC = 5.0 V. The device guarantees data retention down to 2.0 V across –40°C to +85°C, with leakage currents limited to |ILI| ≤ 2 µA and |ILO| ≤ 2 µA under worst-case conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size16,384 bits (2,048 × 8), enabling byte-wide data storage without external multiplexing
Access Time (tAA)20 ns max - defines minimum address-to-valid-data delay in read cycles
Supply Voltage5.0 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5 V systems
Data Retention Voltage2.0 V min - allows backup from coin-cell batteries during main power loss
Standby Current (ISB1)0.1 µA max at CMOS-level chip select - enables multi-year battery life in always-on monitoring nodes
Operating Temperature–40°C to +85°C - qualified for industrial environments including factory automation and outdoor telemetry
Input/Output CompatibilityTTL-compatible - interfaces directly with 74LS, 74F, and microcontroller GPIO without level shifters

Pinout & Package

6116LA20SOGI is housed in a 24-pin gull-wing SOIC (PSG24) package, 300-mil width, RoHS-compliant and green-certified.

Pin/TerminalCircuit RoleDesign Meaning
A0–A10Address Inputs11-bit binary address bus selecting one of 2,048 memory locations
I/O0–I/O7Bidirectional Data Bus8-bit parallel interface supporting simultaneous read or write of one byte
CSChip SelectActive-low enable; drives device into TTL standby (ISB) when HIGH, full standby (ISB1) when above VHC
WEWrite EnableActive-low control for write operations; latches data on falling edge when CS is LOW
OEOutput EnableActive-low gate for output drivers; enables read data only when CS and OE are LOW
VCCPower Supply+5 V supply pin; must be decoupled locally to suppress switching noise
GNDGround ReferenceSignal and power return; requires low-impedance connection to minimize ground bounce

Key Features

FeatureDesign Value
2V data retentionEnables reliable memory hold during brownout or battery switchover without external circuitry
0.1 µA full standby currentReduces system-level power budget by >99% vs. active mode, critical for energy-constrained edge devices
No clock or refresh requiredEliminates timing-critical support circuitry and firmware overhead in microcontroller-based designs
MIL-STD-883 Class B complianceValidated for high-reliability applications including industrial control and avionics subsystems
TTL-compatible I/ODirect interfacing with legacy 5 V logic families avoids level-shifter cost and board space

Applications

Industrial PLC Memory BufferMedical Device Data Logger

Use Scenario: Storing real-time sensor readings and configuration parameters in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Non-volatile data buffer providing fast, deterministic 20 ns read/write access and 2V retention during power interruption.

Use Value: Ensures no data loss during transient outages; eliminates need for external EEPROM or backup capacitors.

Use Scenario: Capturing patient vital signs at fixed intervals in portable ECG monitors powered by primary lithium cells.

IC Role / Device Role / Timing Role: Low-power static RAM holding waveform samples before transmission, with 0.1 µA standby draw extending battery life.

Use Value: Enables >5-year battery operation while maintaining byte-addressable random access for rapid data retrieval.

Avionics Sensor Interface ModuleTest Equipment Firmware Cache

Use Scenario: Interfacing with inertial measurement units (IMUs) in UAV flight controllers requiring radiation-hardened, temperature-stable memory.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM storing calibration coefficients and real-time attitude data across –40°C to +85°C.

Use Value: CMOS process eliminates alpha-particle soft errors; MIL-STD-883 qualification ensures field reliability.

Use Scenario: Caching FPGA configuration bitstreams and instrument calibration tables in automated test equipment (ATE) racks.

IC Role / Device Role / Timing Role: High-speed 20 ns memory serving as local instruction/data cache for microprocessor-based test sequencers.

Use Value: Reduces boot time and improves test throughput via deterministic, zero-refresh access latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI32M-bit (4M × 8), 45 ns access, 3.3 V core, 5 V tolerant I/OHigher density and lower voltage; not pin-compatible; requires PCB redesignSelect for new 3.3 V designs needing larger memory footprint and modern low-power architecture
AS6C1008-20TIN1M-bit (128K × 8), 20 ns access, 5 V, industrial temp, same 24-pin SOICLower density, identical speed/package/temp but no 2V retention or MIL-STD-883 complianceChoose when retention and military qualification are unnecessary and cost is primary constraint

Compared with CY62167EV30LL-45ZSXI and AS6C1008-20TIN, the 6116LA20SOGI uniquely combines industrial temperature rating, MIL-STD-883 Class B reliability, 2V data retention, and 20 ns performance in a legacy 5 V SOIC footprint-making it irreplaceable for sustaining existing battery-backed industrial and avionics systems.

Availability

6116LA20SOGI is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, avionics sensor modules, and test equipment requiring stable component supply across extended lifecycles.

Supply support for 6116LA20SOGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The 6116LA20SOGI belongs to Renesas' legacy CMOS SRAM product line, designed specifically for high-reliability, battery-backed memory applications in industrial and aerospace systems where long-term availability and proven qualification matter more than density scaling.

FAQ

What is the maximum guaranteed access time for 6116LA20SOGI?

The 6116LA20SOGI has a maximum guaranteed access time (tAA) of 20 ns across its rated industrial temperature range (–40°C to +85°C) and supply voltage (5.0 V ±10%). This value is production-tested and specified in the AC Electrical Characteristics table under "Read Cycle No. 1" with CS and OE asserted. The 20 ns rating applies strictly to the LA version in SOIC packaging at industrial grade - not to SA variants or military grades.

Does 6116LA20SOGI support true data retention at 2.0 V?

Yes, the 6116LA20SOGI guarantees data retention at VCC = 2.0 V minimum across its full industrial temperature range, as confirmed in the "Data Retention Characteristics" table (VDR = 2.0 V). This feature is exclusive to LA versions and enables operation from backup batteries or supercapacitors during main power failure, with ICCDR ≤ 1.5 µA at 2.0 V and 25°C.

What is the standby current consumption of 6116LA20SOGI in full CMOS standby mode?

In full CMOS standby mode (CS > VHC, VIN < VLC or VIN > VHC), the 6116LA20SOGI draws a maximum of 0.1 µA (ISB1), as specified in Table 8. This ultra-low current enables multi-year battery life in always-on monitoring applications. Note that TTL-level standby (CS > VIH) draws up to 35 mA - users must drive CS above VHC (not just VIH) to achieve sub-microamp operation.

Is 6116LA20SOGI pin-compatible with other 6116-series SRAMs?

Yes, the 6116LA20SOGI shares identical 24-pin SOIC (PSG24) pinout and signal mapping with all IDT/Renesas 6116SA/LA variants, including 6116SA20SOGI and 6116LA25SOGI. Address (A0–A10), data (I/O0–I/O7), and control (CS, WE, OE, VCC, GND) pins are functionally and physically aligned - allowing direct substitution within the same speed/temperature grade without layout changes.

What qualification standards does 6116LA20SOGI meet?

The 6116LA20SOGI complies with MIL-STD-883 Class B for mechanical and environmental testing, including thermal cycling, vibration, and hermeticity. It also meets Renesas' green manufacturing standards (lead-free, halogen-free) and is rated for industrial temperature operation (–40°C to +85°C). These qualifications are documented in the Ordering Information and Absolute Maximum Ratings sections of the Renesas datasheet Rev. Jul.17.20.

6116LA20SOGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-SOIC (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-SOIC

6116LA20SOGI FAQ

1.How can I place an order for 6116LA20SOGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 6116LA20SOGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 6116LA20SOGI reliable?

The price and inventory of 6116LA20SOGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA20SOGI is usually 5 days.

3.What payment methods are accepted for 6116LA20SOGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA20SOGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 6116LA20SOGI?

6116LA20SOGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 6116LA20SOGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 6116LA20SOGI?

For technical support, including 6116LA20SOGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA20SOGI requirements.

6.How does Aetrix verify that 6116LA20SOGI is sourced from the original manufacturer or authorized distributors?

All 6116LA20SOGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA20SOGI meets industry standards.

7.What is the process for return or replacement of 6116LA20SOGI?

All 6116LA20SOGI units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA20SOGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 6116LA20SOGI part is unused and in its original packaging.

Return procedure for 6116LA20SOGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

6116LA20SOGI Tags

  • 6116LA20SOGI
  • 6116LA20SOGI PDF
  • 6116LA20SOGI Datasheet
  • 6116LA20SOGI Specifications
  • 6116LA20SOGI Images
  • Renesas
  • Renesas 6116LA20SOGI
  • Buy 6116LA20SOGI
  • 6116LA20SOGI Price
  • 6116LA20SOGI Distributor
  • 6116LA20SOGI Supplier
  • 6116LA20SOGI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER