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Renesas 6116LA20SOGI8

Part No.:
6116LA20SOGI8
Manufacturer:
Renesas
Category:
Memory
Package:
24-SOIC (0.295", 7.50mm Width)
Datasheet:
Aetrix6116LA20SOGI8.pdf
Description:
IC SRAM 16KBIT PARALLEL 24SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,064

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Product details

Overview

6116LA20SOGI8 from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 20 ns access time, industrial temperature range (–40°C to +85°C), 5 V supply, and SOIC-24 package. It supports TTL-compatible I/O, battery backup data retention at 2 V, and automatic standby mode when chip select is high - used in embedded controllers, instrumentation, and legacy industrial memory subsystems.

For engineers reviewing the 6116LA20SOGI8 datasheet, 6116LA20SOGI8 pinout, 6116LA20SOGI8 application, or 6116LA20SOGI8 equivalent, key selection criteria include guaranteed 20 ns read cycle time across industrial temperatures, sub-1 µA full-standby current, 2 V data retention capability, and SOIC-24 footprint compatibility with legacy 6116 designs requiring extended thermal reliability.

Technical Context

This device implements fully static asynchronous operation with no clocks or refresh required. Its control logic uses CS/WE/OE three-state decoding to manage read, write, and high-impedance modes - enabling direct interface with microcontrollers and bus-based systems without external timing generation.

The LA variant integrates optimized CMOS design for ultra-low standby power: ISB1 = 0.1 mA (typ.) at CMOS-level chip deselect, and ICCDR ≤ 0.5 µA (typ.) during 2 V battery retention. All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and exhibit ≤ 8 pF input capacitance.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization2K × 8-bit (16,384 bits), byte-wide parallel interface
Access Time (tAA)20 ns max at VCC = 5.0 V ±10%, TA = –40°C to +85°C - ensures deterministic timing in real-time control loops
Supply Voltage4.5 V to 5.5 V - compatible with standard 5 V logic rails and tolerant of board-level ripple
Data Retention Voltage2.0 V min - enables long-term data hold using coin-cell or backup battery without regulator
Full Standby Current (ISB1)0.1 mA typ. at VCC = 5.5 V, CMOS-level CS deassertion - reduces system sleep power by >95% vs SA variant
I/O CompatibilityTTL-input and TTL-output levels - eliminates level-shifting requirements in 5 V microcontroller systems
Operating Temperature–40°C to +85°C - qualified for industrial automation, test equipment, and transportation electronics

Pinout & Package

6116LA20SOGI8 is housed in a 24-pin gull-wing SOIC (PSG24) package, 300-mil body width, JEDEC MS-012AC compliant, with 0.65 mm lead pitch and surface-mount footprint.

Pin/TerminalCircuit RoleDesign Meaning
A0–A10Address Inputs11-bit address bus supporting 2K-word addressing; TTL-compatible, ≤8 pF loading
I/O0–I/O7Bi-directional Data Bus8-bit TTL I/O with 3-state control; VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA
CSChip SelectActive-low enable; drives device into TTL-level standby (ISB = 35 mA) or CMOS-level standby (ISB1 = 0.1 mA)
WEWrite EnableActive-low write strobe; controls data latching on falling edge with tDH ≥ 0 ns setup requirement
OEOutput EnableActive-low output gate; places I/O pins in high-Z state when high, independent of CS/WE state
VCCPower Supply+5 V supply pin; decoupling required within 10 mm due to dynamic current spikes up to 120 mA
GNDGround ReferenceSignal and power ground return; must be low-inductance connection to minimize noise coupling

Key Features

FeatureDesign Value
Battery-backed data retentionOperates down to 2.0 V VCC with ICCDR ≤ 0.5 µA (typ.), enabling years of data hold on CR2032 cells
Ultra-low full-standby powerISB1 = 0.1 mA (typ.) at CMOS-level CS deassertion - critical for battery-powered instrumentation
No clock or refresh requiredFully static architecture eliminates timing controller overhead and simplifies PCB layout
TTL-compatible interfaceDirect connection to 8051, Z80, and 68K-family microcontrollers without level shifters or buffers
Industrial temperature qualificationTested and guaranteed over –40°C to +85°C per Renesas industrial screening flow

Applications

Industrial PLC Memory BufferMedical Diagnostic Instrumentation

Use Scenario: Non-volatile data buffering for sensor calibration tables and runtime configuration in programmable logic controllers.

IC Role / Device Role / Timing Role: Parallel SRAM providing fast, deterministic 20 ns read/write access to microcontroller during scan cycles.

Use Value: Eliminates need for external EEPROM wear leveling or flash erase delays; retains critical settings during brown-out events via 2 V battery backup.

Use Scenario: Temporary waveform storage in portable ultrasound or ECG devices between ADC sampling and host processor transfer.

IC Role / Device Role / Timing Role: High-reliability, low-noise SRAM interfaced directly to 8-bit microcontroller data bus.

Use Value: Sub-1 µA ISB1 current extends battery life in handheld diagnostics; industrial temp rating ensures stable operation in clinical environments.

Legacy Avionics Data LoggerTest & Measurement Equipment

Use Scenario: Real-time flight parameter capture in certified avionics modules where radiation tolerance and long-term data integrity are mandatory.

IC Role / Device Role / Timing Role: Radiation-hardened-by-process (alpha-particle soft-error immunity) SRAM with MIL-STD-883 Class B compliance path.

Use Value: Enables drop-in replacement for older 6116 variants while meeting DO-254 functional safety constraints for non-volatile logging.

Use Scenario: Acquisition buffer in benchtop oscilloscopes and logic analyzers requiring deterministic memory access for trigger capture.

IC Role / Device Role / Timing Role: Byte-wide SRAM synchronized to microcontroller address/data bus with precise tRC = 25 ns (guaranteed).

Use Value: 20 ns tAA ensures minimal dead time between samples; SOIC-24 footprint allows retrofits into existing 6116-based designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXIT32M-bit (4M × 8), 45 ns access, 3.3 V only, TSOP-48Higher density but incompatible voltage and package; requires PCB redesignSelect only if migrating to 3.3 V systems and needing >16K capacity
AS6C1008-20TIN1M-bit (128K × 8), 20 ns, 5 V, SOIC-28Same speed and voltage, but larger 28-pin SOIC footprint and higher density - not pin-compatibleConsider for new designs needing more memory; not a drop-in replacement

Compared with CY62167EV30LL-45ZSXIT and AS6C1008-20TIN, the 6116LA20SOGI8 uniquely delivers industrial-temp 20 ns access in a legacy-compatible 24-pin SOIC with 2 V data retention - making it irreplaceable for retrofitting or sustaining production of 16K-byte memory subsystems.

Availability

6116LA20SOGI8 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and legacy avionics requiring stable component supply and long-term lifecycle support.

Supply support for 6116LA20SOGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The IDT6116SA/LA family - now part of Renesas' legacy memory portfolio - was designed specifically for high-reliability, low-power, pin-compatible replacements in 5 V embedded systems requiring static RAM with battery backup and extended temperature operation.

FAQ

What is the maximum guaranteed access time for 6116LA20SOGI8 across its full industrial temperature range?

The 6116LA20SOGI8 has a maximum guaranteed access time (tAA) of 20 ns at VCC = 5.0 V ±10% and TA = –40°C to +85°C. This value is production-tested and specified in the AC Electrical Characteristics table under industrial grade conditions - ensuring deterministic timing for real-time firmware execution without margining.

Does 6116LA20SOGI8 support true battery backup operation, and what voltage range is validated?

Yes, the 6116LA20SOGI8 supports true battery backup: data retention is guaranteed down to VCC = 2.0 V, with ICCDR ≤ 0.5 µA (typ.) at that voltage. This is exclusive to the LA version and verified per the Data Retention Characteristics table - enabling reliable long-term storage using standard 2–3 V coin cells without external regulators.

Is 6116LA20SOGI8 pin-compatible with other 6116 variants such as 6116SA20SOGI8?

Yes, 6116LA20SOGI8 is pin-compatible with all 6116SA/LA variants in the same SOIC-24 (PSG24) package, including 6116SA20SOGI8. The pinout, footprint, and signal definitions match exactly - only electrical parameters (e.g., ISB1, ICCDR, tAA consistency over temperature) differ between SA and LA versions.

What is the full-standby current (ISB1) specification for 6116LA20SOGI8, and how is it triggered?

The full-standby current ISB1 for 6116LA20SOGI8 is 0.1 mA (typ.) and 0.9 mA (max) at VCC = 5.5 V, TA = +25°C. It is triggered when CS is driven above VHC (VCC – 0.2 V), and all inputs are held below VLC (0.2 V) or above VHC - placing the device in deepest power-down mode with I/O in high-Z and internal circuitry minimized.

Can 6116LA20SOGI8 be used in new designs, or is it obsolete?

The 6116LA20SOGI8 remains actively supported by Renesas for legacy and sustaining engineering use. While not recommended for *new* high-volume consumer designs due to density limitations, it is fully qualified for industrial, medical, and aerospace applications where long-term supply, proven reliability, and backward compatibility are prioritized over cutting-edge specs.

6116LA20SOGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-SOIC (0.295", 7.50mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-SOIC

6116LA20SOGI8 FAQ

1.How can I place an order for 6116LA20SOGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 6116LA20SOGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 6116LA20SOGI8 reliable?

The price and inventory of 6116LA20SOGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA20SOGI8 is usually 5 days.

3.What payment methods are accepted for 6116LA20SOGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA20SOGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 6116LA20SOGI8?

6116LA20SOGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 6116LA20SOGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 6116LA20SOGI8?

For technical support, including 6116LA20SOGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA20SOGI8 requirements.

6.How does Aetrix verify that 6116LA20SOGI8 is sourced from the original manufacturer or authorized distributors?

All 6116LA20SOGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA20SOGI8 meets industry standards.

7.What is the process for return or replacement of 6116LA20SOGI8?

All 6116LA20SOGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA20SOGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 6116LA20SOGI8 part is unused and in its original packaging.

Return procedure for 6116LA20SOGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

6116LA20SOGI8 Tags

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