My Inquiry
My Account
Renesas 6116LA25DB
- Part No.:
- 6116LA25DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA25DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,047
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
The 6116LA25DB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 25ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across the military temperature range (–55°C to +125°C), uses no refresh or clocks, and is housed in a 24-pin ceramic DIP (CD24) package. It serves as nonvolatile scratchpad memory in avionics control modules requiring high-reliability, low-quiescent-power operation.
For engineers reviewing the 6116LA25DB datasheet, 6116LA25DB pinout, 6116LA25DB application, or 6116LA25DB equivalent, key selection criteria include its 2V data retention capability, military-grade temperature compliance, standby current of 0.1mA (typical), and compatibility with legacy 5V TTL bus systems without level shifting.
Technical Context
This device implements a fully static asynchronous architecture with dual-control write enable (WE) and chip select (CS), enabling both WE-controlled and CS-controlled write cycles. Its internal 128 × 128 memory array is decoded via address inputs A0–A10, supporting direct byte-wide interfacing with 8-bit microcontrollers and peripheral controllers.
Power management relies on TTL-level and CMOS-level standby modes: ISB = 40mA (max) when CS > VIH, and ISB1 = 0.1mA (typ) when CS > VHC and inputs are held at valid logic levels - critical for battery-backed hold mode in mission-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-accessible with no word alignment constraints |
| Access Time (tAA) | 25ns max - guarantees read data validity within 25ns after address stabilization, enabling tight timing with 30MHz+ CPU buses |
| Data Retention Voltage | 2.0V min - maintains stored data during brownout or backup battery operation without external regulators |
| Standby Current (ISB1) | 0.1mA typical at VCC = 5V - enables multi-year battery life in maintenance-free field-deployed systems |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for airborne and space-qualified platforms |
| I/O Compatibility | TTL input thresholds (VIH = 2.2V, VIL = 0.8V) and output drive (VOH ≥ 2.4V @ –4mA, VOL ≤ 0.4V @ 8mA) |
| Package | 24-pin ceramic DIP (CD24), 600-mil width - hermetically sealed, moisture-resistant, and suitable for high-reliability PCB assembly |
Pinout & Package
Package: 24-pin ceramic dual in-line package (CD24), 600-mil body width, through-hole mounting, hermetic seal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 to select one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS = HIGH or OE = HIGH during reads |
| CS | Chip Select | Active-low enable; drives device into full standby (ISB1) when HIGH, isolates memory from bus |
| WE | Write Enable | Active-low control for write cycles; latches data on falling edge when CS is also LOW |
| OE | Output Enable | Active-low control for read output drivers; allows multiplexed bus sharing without external tri-state logic |
| VCC | Power Supply | +5.0V ±10% supply; powers core logic and I/O buffers; supports 2V retention when dropped |
| GND | Ground Reference | Signal and power return; must be low-inductance connection to minimize noise in high-speed access |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V VCC with ICCDR ≤ 0.5µA (typ), eliminating need for external SRAM backup controllers |
| Zero-refresh static architecture | No clocks, timers, or external refresh circuitry required - reduces system complexity and EMI sources |
| MIL-STD-883 Class B compliance | Qualified for military applications including vibration, shock, thermal cycling, and hermeticity testing |
| Two-tier standby power modes | ISB = 40mA (TTL-level CS) and ISB1 = 0.1mA (CMOS-level CS) - selectable based on system wake latency requirements |
| Alpha-particle soft-error immunity | CMOS process minimizes single-event upsets - critical for avionics and satellite subsystems |
Applications
| Avionics Flight Control Unit | Secure Communications Module |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in a DO-254-certified flight computer. IC Role / Device Role / Timing Role: Nonvolatile scratchpad RAM holding calibration data and fault logs during power transitions between main and backup power rails. Use Value: 2V data retention ensures zero data loss during 100ms brownout events; 25ns access meets 40MHz CPU bus timing budgets. | Use Scenario: Storing cryptographic keys and session tokens in a Type 1 encrypted radio transceiver operating in extended temperature environments. IC Role / Device Role / Timing Role: Secure, tamper-resilient memory buffer isolated from volatile main memory and accessible only by trusted crypto engine. Use Value: MIL-STD-883 qualification guarantees operation at –55°C to +125°C; low leakage (<2µA) prevents detectable power side-channel emissions. |
| Industrial Programmable Logic Controller | Spacecraft Onboard Computer |
Use Scenario: Holding ladder logic state variables and I/O mapping tables in an explosion-proof PLC deployed in oil refinery control cabinets. IC Role / Device Role / Timing Role: Deterministic, jitter-free memory interface for deterministic scan-cycle execution under EMI-heavy 4–20mA loop conditions. Use Value: TTL compatibility eliminates level-shifter components; 0.1mA standby current extends battery-backed runtime to >10 years. | Use Scenario: Buffering telemetry packets prior to downlink transmission in a CubeSat attitude determination and control system (ADCS). IC Role / Device Role / Timing Role: Radiation-tolerant, low-power memory node interfaced directly to FPGA-based packet assembler with no external glue logic. Use Value: CMOS process eliminates alpha-induced soft errors; hermetic CD24 package withstands vacuum outgassing and thermal vacuum cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3V-only supply, 10ns access, SOJ-44 package, no 2V retention | Requires voltage translation for 5V TTL systems; unsuitable for battery backup | Select only if migrating to 3.3V system architecture and higher speed is mandatory |
| AS6C4008-25ZIN | 5V supply, 25ns access, industrial temp (–40°C to +85°C), plastic SOIC-28 | Lacks military qualification and 2V retention; lower reliability in harsh environments | Acceptable for commercial/industrial cost-sensitive designs where MIL-spec is not required |
Compared with IS61LV25616AL-10TLI and AS6C4008-25ZIN, the 6116LA25DB uniquely delivers military temperature range, hermetic packaging, and true 2V battery retention - making it irreplaceable in safety-critical, long-life, or extreme-environment deployments where data integrity cannot be compromised.
Availability
The 6116LA25DB is available at Aetrix Electronics and suitable for avionics flight control units, secure communications modules, industrial programmable logic controllers, and spacecraft onboard computers requiring stable component supply across extended lifecycle programs.
Supply support for 6116LA25DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116LA25DB belongs to Renesas' legacy high-reliability static RAM product line, designed specifically for aerospace, defense, and industrial systems demanding MIL-qualified operation, zero-refresh simplicity, and ultra-low standby power.
FAQ
What is the minimum VCC required to retain data in the 6116LA25DB?
The 6116LA25DB guarantees data retention down to 2.0V VCC across its full military temperature range (–55°C to +125°C). At 2V, typical data retention current (ICCDR) is 0.5µA, enabling multi-year operation from primary lithium batteries. This specification is exclusive to the LA version and is verified per the datasheet's Data Retention Characteristics table.
Does the 6116LA25DB require a clock or refresh signal?
No, the 6116LA25DB is a fully static RAM and requires neither a clock nor periodic refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VCC remains above 2.0V and operating specifications are met. This eliminates timing-critical refresh overhead in microcontroller or FPGA-based systems.
What package type is used for the 6116LA25DB?
The 6116LA25DB is supplied in a 24-pin ceramic dual in-line package (CD24), 600-mil width, with through-hole leads. This hermetically sealed package meets MIL-STD-883 Class B requirements and provides superior moisture resistance, thermal stability, and long-term reliability compared to plastic DIP or SOIC variants.
Can the 6116LA25DB interface directly with 5V TTL logic?
Yes, the 6116LA25DB features fully TTL-compatible inputs and outputs: VIH = 2.2V (min), VIL = 0.8V (max), VOH ≥ 2.4V (at –4mA), and VOL ≤ 0.4V (at 8mA). No level-shifting circuitry is needed when connecting to standard 5V TTL microcontrollers, FPGAs, or peripheral ICs.
What is the maximum operating temperature range for the 6116LA25DB?
The 6116LA25DB is rated for the military temperature range of –55°C to +125°C and is compliant with MIL-STD-883, Class B. This qualification includes environmental stress screening, thermal cycling, and hermeticity testing - confirming suitability for deployment in jet engines, missile guidance systems, and orbital platforms.
6116LA25DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA25DB FAQ
1.How can I place an order for 6116LA25DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA25DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA25DB reliable?
The price and inventory of 6116LA25DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA25DB is usually 5 days.
3.What payment methods are accepted for 6116LA25DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA25DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA25DB?
6116LA25DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA25DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA25DB?
For technical support, including 6116LA25DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA25DB requirements.
6.How does Aetrix verify that 6116LA25DB is sourced from the original manufacturer or authorized distributors?
All 6116LA25DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA25DB meets industry standards.
7.What is the process for return or replacement of 6116LA25DB?
All 6116LA25DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA25DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA25DB part is unused and in its original packaging.
Return procedure for 6116LA25DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA25DB Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
