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Renesas 6116LA25SOG8
- Part No.:
- 6116LA25SOG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
6116LA25SOG8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,341
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Product details
Overview
6116LA25SOG8 from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 25ns access time, TTL-compatible I/O, and 2V data retention capability. It operates over industrial temperature range (–40°C to +85°C), supports standby power mode via chip select, and is packaged in 24-pin SOIC (PSG24). Used in embedded controllers and battery-backed memory systems requiring non-refresh operation.
For engineers reviewing the 6116LA25SOG8 datasheet, 6116LA25SOG8 pinout, 6116LA25SOG8 application, or 6116LA25SOG8 equivalent, key selection criteria include guaranteed 25ns read cycle time, sub-1µA full-standby current at 2V, industrial-grade reliability, and compatibility with legacy 5V TTL bus interfaces without level shifting.
Technical Context
This device implements fully static asynchronous architecture-no clocks or refresh cycles required. Its control logic uses CS, OE, and WE inputs to manage read/write/standby states per JEDEC-standard timing waveforms, with separate high-impedance output enable and write-enable paths.
It features dual standby modes: TTL-level standby (ISB = 40mA max) when CS > VIH, and ultra-low-power CMOS-level standby (ISB1 = 0.1µA typ.) when CS > VHC and inputs held at valid logic levels-enabling true battery backup operation with verified 2V data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), sufficient for small firmware buffers or real-time data logging in microcontroller co-processor systems |
| Access Time | 25ns max (industrial temp), enabling direct interface with 20MHz Z80 or 80C88-based systems without wait states |
| Supply Voltage | 5.0V ±10%, compatible with standard 5V logic rails and legacy industrial power supplies |
| Standby Current | 0.1µA typical (CMOS-level), allowing multi-year data retention on coin-cell batteries |
| Data Retention Voltage | 2.0V min, validated across –40°C to +85°C for unattended backup in remote sensors or metering devices |
| I/O Compatibility | TTL input thresholds (VIH = 2.2V, VIL = 0.8V) and output drive (VOH = 2.4V @ –4mA, VOL = 0.4V @ 8mA) |
| Operating Temp | –40°C to +85°C, qualified for industrial automation, transportation, and outdoor telemetry applications |
Pinout & Package
Package: 24-pin SOIC (PSG24), gull-wing lead form, 300-mil body width, RoHS-compliant green variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus supporting 2K-word addressing; driven directly by microcontroller address lines |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance during standby or when OE = HIGH |
| CS | Chip Select | Active-low enable; asserts standby mode when HIGH, enabling system-level power gating |
| OE | Output Enable | Active-low control for read data output; decouples memory from bus during writes or idle periods |
| WE | Write Enable | Active-low signal controlling write latching; enables asynchronous write without clock dependency |
| VCC | Power Supply | +5V supply pin; bypass capacitor placement critical for noise immunity in mixed-signal environments |
| GND | Ground Reference | Signal return path; requires low-inductance connection to minimize ground bounce during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh required-simplifies system design and eliminates DRAM controller overhead |
| Battery Backup Support | Validated 2V data retention with ≤0.5µA ICCDR, enabling maintenance-free memory in off-grid devices |
| Ultra-Low Standby Power | 0.1µA ISB1 at CMOS-level CS deassertion-extends battery life in always-on monitoring nodes |
| TTL Compatibility | Direct interface with legacy 5V microcontrollers and peripherals without level-shifting circuitry |
| Military/Industrial Qualification | MIL-STD-883 Class B compliance (for ceramic variants) and industrial temp grade ensure field reliability |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing calibration coefficients and runtime configuration in programmable logic controllers operating in factory-floor environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Non-volatile parameter store accessed asynchronously during boot and runtime; retains settings during brief AC brownouts. Use Value: 2V data retention ensures integrity during 100ms+ power interruptions; 25ns access enables real-time I/O scanning at 20kHz loop rates. | Use Scenario: Holding patient-specific therapy parameters and usage logs in portable infusion pumps with coin-cell backup. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical treatment history across power cycles and sterilization shutdowns. Use Value: Sub-1µA ISB1 minimizes drain on CR2032 cells, extending service life beyond 2 years between replacements. |
| Automotive Telematics Event Log | Avionics Sensor Calibration Memory |
Use Scenario: Recording crash-event timestamps, GPS coordinates, and CAN bus snapshots in vehicle black-box recorders. IC Role / Device Role / Timing Role: High-reliability buffer capturing transient data bursts during power loss or EMI events. Use Value: Industrial temp rating (–40°C to +85°C) and alpha-particle immunity ensure data integrity under under-hood thermal stress. | Use Scenario: Storing sensor offset/gain coefficients in flight-critical inertial measurement units requiring long-term stability. IC Role / Device Role / Timing Role: Radiation-hardened (CMOS process) memory retaining calibration data across 20-year aircraft service life. Use Value: MIL-STD-883 Class B qualification (ceramic package variants) validates performance in high-altitude radiation environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3V-only supply, 10ns access, 256K×16 organization | Requires voltage translation for 5V systems; larger density but incompatible bus width | Select only if migrating to 3.3V architecture and needing higher capacity |
| AS6C4008-25ZIN | 5V supply, 25ns access, same 2K×8 organization, but no 2V retention spec | Lacks guaranteed low-voltage data retention; not suitable for battery backup use cases | Use where cost is primary concern and backup power is not required |
Compared with IS61LV25616AL-10TLI and AS6C4008-25ZIN, the 6116LA25SOG8 uniquely delivers verified 2V data retention and industrial temp operation in a drop-in 5V TTL-compatible footprint-making it irreplaceable for legacy-reliant, battery-backed designs.
Availability
6116LA25SOG8 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and automotive telematics requiring stable component supply and long-lifecycle support.
Supply support for 6116LA25SOG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116LA25SOG8 belongs to Renesas' legacy CMOS SRAM product line, engineered for backward compatibility with 5V TTL systems and extended reliability in harsh environments-prioritizing longevity, radiation tolerance, and seamless integration into mature industrial platforms.
FAQ
What is the maximum guaranteed access time for 6116LA25SOG8 across its rated temperature range?
The 6116LA25SOG8 has a maximum guaranteed access time of 25ns over the full industrial temperature range (–40°C to +85°C), as specified in the AC Electrical Characteristics table under "tAA" parameter for commercial and industrial grades. This value is production-tested and applies to all operating conditions within the recommended VCC (4.5V–5.5V) and load specifications.
Does 6116LA25SOG8 support true battery backup operation, and what is the minimum retention voltage?
Yes, the 6116LA25SOG8 supports true battery backup operation. The LA version guarantees data retention down to 2.0V (VDR), with typical retention current (ICCDR) of 0.5µA at 2.0V and –40°C to +85°C. This is explicitly validated in the Data Retention Characteristics table and confirmed in the "Battery backup operation" feature bullet.
What package type and lead count does 6116LA25SOG8 use, and is it RoHS-compliant?
The 6116LA25SOG8 uses a 24-pin SOIC package (PSG24 code), gull-wing lead form, 300-mil body width. Per the Ordering Information section and Renesas' July 2020 revision, this part is a "Green" device-fully compliant with RoHS Directive 2011/65/EU and free of restricted hazardous substances.
Can 6116LA25SOG8 be used in systems requiring MIL-STD-883 Class B qualification?
No-the 6116LA25SOG8 is an industrial-grade SOIC variant and is not MIL-STD-883 Class B qualified. That qualification applies only to ceramic DIP packages (e.g., 6116LA25TDB, SD24) per the datasheet's "Military product compliant to MIL-STD-833, Class B" note. The SOG8 variant is rated for industrial temperature only.
What is the standby current consumption of 6116LA25SOG8 when CS is deasserted at 5V supply?
When CS is deasserted (HIGH) at VCC = 5.5V and f = fMAX, the 6116LA25SOG8 draws ≤40mA in TTL-level standby (ISB). In full CMOS-level standby (CS > VHC, inputs held valid), it consumes only 0.1µA typical (ISB1), as confirmed in Table 8 under "IDT6116LA" column for 25ns speed grade.
6116LA25SOG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
6116LA25SOG8 FAQ
1.How can I place an order for 6116LA25SOG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA25SOG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA25SOG8 reliable?
The price and inventory of 6116LA25SOG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA25SOG8 is usually 5 days.
3.What payment methods are accepted for 6116LA25SOG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA25SOG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA25SOG8?
6116LA25SOG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA25SOG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA25SOG8?
For technical support, including 6116LA25SOG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA25SOG8 requirements.
6.How does Aetrix verify that 6116LA25SOG8 is sourced from the original manufacturer or authorized distributors?
All 6116LA25SOG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA25SOG8 meets industry standards.
7.What is the process for return or replacement of 6116LA25SOG8?
All 6116LA25SOG8 units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA25SOG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA25SOG8 part is unused and in its original packaging.
Return procedure for 6116LA25SOG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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