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Renesas 6116LA25TDB
- Part No.:
- 6116LA25TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116LA25TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,185
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Product details
Overview
The 6116LA25TDB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 25ns access time, military-grade temperature range (–55°C to +125°C), ceramic 24-pin DIP (SD24) package, and 2V data retention capability. It operates at 5.0V ±10%, consumes ≤85mA active current and ≤40µA standby current, and supports TTL-compatible I/O for embedded control and avionics memory buffering.
For engineers reviewing the 6116LA25TDB datasheet, 6116LA25TDB pinout, 6116LA25TDB application, or 6116LA25TDB equivalent, this page delivers verified timing specs (tAA = 25ns, tRC = 25ns), DC characteristics (VIL = 0.8V, VOH = 2.4V), retention behavior (2V/≤300µA), military qualification (MIL-STD-883 Class B), and ceramic DIP mechanical data - all confirmed from Renesas' official 2020 datasheet.
Technical Context
This device implements fully static asynchronous operation-no clocks or refresh required-and uses high-reliability CMOS technology with alpha-particle soft-error mitigation. Its control logic relies on three independent enables: Chip Select (CS), Output Enable (OE), and Write Enable (WE), supporting read, write, and high-Z standby modes per the truth table.
The memory array is organized as 128 × 128 bits with address decoding for A0–A10 inputs and bidirectional I/O0–I/O7 pins. Standby power reduction is achieved via TTL-level CS-driven entry into low-current mode (ISB ≤ 40µA) or CMOS-level full standby (ISB1 ≤ 0.9µA), critical for battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), enabling byte-wide data storage without external multiplexing |
| Access Time (tAA) | 25 ns max - guarantees deterministic read latency in real-time control loops |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5V systems |
| Data Retention Voltage | 2.0 V min - allows backup from coin-cell batteries or ultra-low-power hold circuits |
| Operating Temperature | –55°C to +125°C - qualified for aerospace, defense, and downhole industrial environments |
| Standby Current (ISB) | 40 µA max (TTL-level CS) - extends battery life in always-on monitoring applications |
| Package | Ceramic 24-pin DIP (SD24), 0.3-inch width - provides hermetic sealing and thermal stability |
Pinout & Package
6116LA25TDB is housed in a hermetically sealed ceramic dual in-line package (CDIP) with 24 leads, designated SD24 per Renesas ordering codes. This package meets MIL-STD-883 Class B requirements and supports through-hole mounting with 0.3-inch body width and 0.1-inch lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface for read/write data transfer; high-impedance when disabled |
| CS | Chip Select | Active-low enable controlling device activation and standby entry (ISB/ISB1) |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on falling edge with CS asserted |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O lines |
| VCC | Power Supply | +5V supply input; decoupling required within 1 cm for noise immunity |
| GND | Ground Reference | Signal and power return path; must be low-inductance connection to minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh cycles needed - simplifies system timing design and eliminates DRAM controller overhead |
| Battery Backup Support | 2V data retention with ≤300µA ICCDR - enables years of data hold on primary lithium cells |
| TTL-Compatible I/O | VIL = 0.8V, VOH = 2.4V - direct interfacing with legacy 5V microcontrollers and FPGAs without level shifters |
| Military Qualification | MIL-STD-883 Class B compliance - validated for shock, vibration, temperature cycling, and long-term reliability in mission-critical systems |
| Low Alpha-Rate CMOS | Virtually eliminates soft errors from cosmic radiation - essential for avionics and space-qualified subsystems |
Applications
| Avionics Flight Control Memory | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and flight control law coefficients in airborne computers where power may be interrupted mid-mission. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data during brownout events using 2V battery backup. Use Value: Ensures deterministic recovery within 25ns access time after power restoration, avoiding reinitialization delays in safety-critical loops. | Use Scenario: Caching I/O status and ladder logic state variables in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: High-reliability 2K×8 memory providing glitch-free read/write cycles across –40°C to +85°C industrial range variants. Use Value: Ceramic DIP packaging and MIL-STD-883 qualification ensure uninterrupted operation under EMI, vibration, and thermal stress. |
| Military Radar Signal Processing | Downhole Oilfield Telemetry |
Use Scenario: Holding intermediate FFT results and filter coefficients in airborne radar front-end modules exposed to extreme thermal gradients. IC Role / Device Role / Timing Role: Low-power static RAM with 25ns tAA and full standby (ISB1 ≤ 0.9µA) minimizing heat generation in sealed enclosures. Use Value: Enables continuous waveform processing without refresh-induced jitter or thermal throttling in conduction-cooled assemblies. | Use Scenario: Logging pressure/temperature sensor outputs in oil well logging tools deployed at >150°C ambient with intermittent surface power. IC Role / Device Role / Timing Role: Hermetically sealed ceramic DIP (SD24) SRAM retaining valid data at –55°C to +125°C with 2V battery hold. Use Value: Survives extended exposure to high-temperature, high-pressure downhole conditions while preserving integrity of time-stamped measurements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3V supply, 10ns access, 256K×16 organization, TSSOP-48 package | Higher density, lower voltage, modern surface-mount - unsuitable for 5V legacy or military through-hole designs | Select only if migrating to 3.3V systems with PCB redesign; not drop-in compatible with 6116LA25TDB |
| AS6C4008-25ZIN | 5V supply, 25ns access, 512K×8 organization, SOIC-28 package, commercial temp only | Larger capacity but lacks military temp rating, ceramic packaging, and 2V retention - insufficient for aerospace use cases | Acceptable for cost-sensitive commercial 5V systems needing higher density, but not for qualified mil-spec deployments |
Compared with IS61LV25616AL-10TLI and AS6C4008-25ZIN, the 6116LA25TDB uniquely combines military temperature range, hermetic ceramic DIP packaging, 2V data retention, and proven 5V TTL compatibility - making it irreplaceable in legacy avionics, defense electronics, and high-reliability industrial control where qualification traceability and physical robustness are mandatory.
Availability
6116LA25TDB is available at Aetrix Electronics and suitable for avionics flight control, industrial PLC data buffering, military radar signal processing, and downhole oilfield telemetry requiring stable component supply across extended lifecycle programs.
Supply support for 6116LA25TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116LA25TDB belongs to Renesas' legacy CMOS static RAM product line, designed specifically for high-reliability, battery-backed, and military-qualified memory applications where data integrity, long-term availability, and environmental resilience are non-negotiable.
FAQ
What is the maximum access time guaranteed for the 6116LA25TDB?
The 6116LA25TDB has a maximum guaranteed access time (tAA) of 25 ns across its full military temperature range (–55°C to +125°C), as specified in Renesas' official datasheet revision dated July 17, 2020. This value is production-tested and applies under VCC = 5.0V ±10% and load conditions defined in Figure 2 of the datasheet. The 6116LA25TDB achieves this performance while maintaining low power consumption and 2V data retention capability.
Does the 6116LA25TDB support true battery backup operation?
Yes, the 6116LA25TDB supports true battery backup operation with a guaranteed data retention voltage of 2.0 V minimum. In retention mode (CS > VHC, VIN < VLC or VIN > VHC), it draws ≤300 µA typical current at 2.0 V over the full military temperature range. This feature is exclusive to the LA version and is validated per Renesas' Data Retention Characteristics table (Table 10). The 6116LA25TDB requires no external circuitry beyond a 2V backup source to maintain data integrity during main power loss.
What package type and pin count does the 6116LA25TDB use?
The 6116LA25TDB uses a 24-pin ceramic dual in-line package (CDIP) with SD24 designation - a 0.3-inch width, hermetically sealed, through-hole mount package compliant with MIL-STD-883 Class B. This differs from plastic DIP (PTG24) and SOIC (PSG24) variants. Pinout matches industry-standard 2K×8 SRAM layout: A0–A10, I/O0–I/O7, CS, WE, OE, VCC, and GND. The 6116LA25TDB's SD24 package ensures thermal stability and reliability in high-stress environments.
Is the 6116LA25TDB compatible with TTL-level logic interfaces?
Yes, the 6116LA25TDB features fully TTL-compatible inputs and outputs: VIH = 2.2 V min, VIL = 0.8 V max, VOH = 2.4 V min (IOH = –4 mA), VOL = 0.4 V max (IOL = 8 mA), all specified at VCC = 4.5 V to 5.5 V. This allows direct connection to legacy 5V microcontrollers, FPGAs, and ASICs without level-shifting circuitry. The 6116LA25TDB maintains these thresholds across its full military temperature range, ensuring interoperability in mixed-signal systems.
What is the standby current specification for the 6116LA25TDB?
The 6116LA25TDB specifies two standby current modes: ISB ≤ 40 µA max when CS is held at TTL HIGH (VIH), and ISB1 ≤ 0.9 µA max when CS is driven to CMOS HIGH (VHC) with inputs at valid logic levels. Both values are guaranteed over –55°C to +125°C and VCC = 5.0 V ±10%. These ultra-low standby currents enable multi-year battery operation in maintenance-free telemetry and remote sensing applications using the 6116LA25TDB.
6116LA25TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA25TDB FAQ
1.How can I place an order for 6116LA25TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA25TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA25TDB reliable?
The price and inventory of 6116LA25TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA25TDB is usually 5 days.
3.What payment methods are accepted for 6116LA25TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA25TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA25TDB?
6116LA25TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA25TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA25TDB?
For technical support, including 6116LA25TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA25TDB requirements.
6.How does Aetrix verify that 6116LA25TDB is sourced from the original manufacturer or authorized distributors?
All 6116LA25TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA25TDB meets industry standards.
7.What is the process for return or replacement of 6116LA25TDB?
All 6116LA25TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA25TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA25TDB part is unused and in its original packaging.
Return procedure for 6116LA25TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA25TDB Tags
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AT24C02C-XHM-T
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