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Renesas 6116LA25TPG
- Part No.:
- 6116LA25TPG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-DIP (0.300", 7.62mm)
- Datasheet:
-
6116LA25TPG.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24DIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,213
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Product details
Overview
The 6116LA25TPG from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 25ns maximum access time, TTL-compatible I/O, and 2V data retention capability. It operates across commercial temperature range (0°C to +70°C), uses a 24-pin plastic DIP package, and supports battery backup in standby mode for embedded systems requiring non-volatile data hold.
For engineers reviewing the 6116LA25TPG datasheet, 6116LA25TPG pinout, 6116LA25TPG application, or 6116LA25TPG equivalent, this device is selected for legacy industrial control, instrumentation memory buffering, and power-constrained microcontroller co-processor applications where static operation, no refresh, and low standby current (<0.1mA) are critical design requirements.
Technical Context
This SRAM implements fully static asynchronous architecture-no clocks or refresh cycles required-and uses TTL-compatible input thresholds (VIH = 2.2V min, VIL = 0.8V max) with CMOS-level output drive (VOH ≥ 2.4V at –4mA, VOL ≤ 0.4V at 8mA). Its dual-mode standby control responds to TTL-level CS high (ISB = 40mA max) or CMOS-level CS high (ISB1 = 0.1mA typ), enabling system-level power optimization.
The device integrates a 128 × 128 memory array with address decoder, I/O control, and input data circuitry on a single die. Data retention at 2V is validated over full commercial temperature range, and alpha-particle soft-error immunity is achieved via advanced CMOS process-critical for reliability in mission-critical instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 25ns max - defines minimum read latency from valid address to stable data output |
| Supply Voltage (VCC) | 4.5V–5.5V - compatible with standard 5V TTL logic rails without level shifting |
| Data Retention Voltage | 2.0V min - enables battery-backed operation during main power loss |
| Standby Current (ISB1) | 0.1mA typical at VCC = 5.5V - enables ultra-low-power hold mode in portable systems |
| Operating Temperature | 0°C to +70°C - qualified for commercial-grade embedded control and test equipment |
| Package | 24-pin plastic DIP (PTG24), 300-mil width - through-hole mounting for prototyping and legacy PCBs |
Pinout & Package
6116LA25TPG is housed in a 24-pin plastic dual in-line package (PTG24, 300-mil width) with standard through-hole footprint and 0.1-inch pin pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path for read/write operations; high-impedance when CS high or OE/WE inactive |
| CS | Chip Select | Active-low enable; drives device into TTL-level standby (ISB) or CMOS-level deep standby (ISB1) when high |
| WE | Write Enable | Active-low control for write cycle initiation; must be low with CS low to store data |
| OE | Output Enable | Active-low control for read data assertion; high-Z when high, even if CS low |
| VCC | Power Supply | +5V supply pin; decoupling capacitor required near pin for noise immunity |
| GND | Ground Reference | Signal and power ground return; requires low-impedance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V VCC with typical ICCDR = 0.5–1.5µA - enables years-long data hold on coin cell |
| Static asynchronous operation | No clock or refresh circuitry required - simplifies timing design and eliminates refresh overhead in MCU systems |
| TTL-compatible I/O | Direct interface with 5V TTL logic families without level translators - reduces BOM count and layout complexity |
| Low-power standby modes | ISB = 40mA max (TTL CS), ISB1 = 0.1mA typ (CMOS CS) - selectable based on system control voltage levels |
| High-reliability CMOS process | Alpha-particle soft-error rate virtually eliminated - suitable for medical and industrial instrumentation |
Applications
| Industrial PLC Memory Buffer | Legacy Test Equipment Data Cache |
|---|---|
|
Use Scenario: Stores real-time sensor readings and configuration parameters in programmable logic controllers during brief AC mains interruptions. IC Role / Device Role / Timing Role: Non-refreshing static RAM providing deterministic 25ns read/write access for deterministic scan-cycle execution. Use Value: 2V data retention ensures parameter integrity during brownouts; 24-pin DIP enables field-replaceable module design. |
Use Scenario: Holds calibration coefficients and waveform buffers in benchtop oscilloscopes and signal generators with intermittent power cycling. IC Role / Device Role / Timing Role: Byte-accessible parallel memory supporting fast CPU read/write bursts without wait states. Use Value: TTL compatibility eliminates level-shifter components; low ISB1 extends battery life in portable test gear. |
| Microcontroller Co-Processor RAM | Embedded Instrumentation Scratchpad |
|
Use Scenario: Serves as external scratchpad memory for 8-bit MCUs (e.g., 8051 derivatives) in space-constrained medical devices. IC Role / Device Role / Timing Role: Asynchronous SRAM interfaced directly to MCU address/data bus with simple CS/OE/WE decoding. Use Value: 24-pin DIP allows hand-soldered prototyping; 25ns speed matches mid-range MCU bus timing. |
Use Scenario: Provides temporary storage for measurement logs and fault history in environmental monitoring terminals deployed in remote locations. IC Role / Device Role / Timing Role: Low-power memory retaining critical event timestamps during solar/battery-only operation. Use Value: 0.1mA ISB1 enables multi-year operation on primary lithium cells; industrial temp grade optional for extended environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16-bit, 45ns access, 3.3V core, SOIC-44 package | Higher density and lower voltage, but incompatible pinout and bus width; requires PCB redesign | Select only when upgrading capacity and migrating to 3.3V systems with space for larger package |
| AS6C1008-25ZIN | 128K × 8-bit, 25ns access, 5V supply, 28-pin SOIC | Same access time and voltage, but 28-pin SOIC requires footprint change and lacks 2V retention | Use for higher-density replacements where battery backup is not required and surface-mount is preferred |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-25ZIN, the 6116LA25TPG uniquely delivers 2V data retention in a legacy-compatible 24-pin DIP, making it irreplaceable in field-serviceable, battery-backed, through-hole designs without layout revision.
Availability
6116LA25TPG is available at Aetrix Electronics and suitable for industrial PLC memory buffering, legacy test equipment data caching, and microcontroller co-processor RAM applications requiring stable component supply and long-term obsolescence support.
Supply support for 6116LA25TPG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The 6116LA25TPG belongs to Renesas' legacy CMOS static RAM product line, designed specifically for reliability-critical, low-power, and pin-compatible replacement in mature industrial and instrumentation systems.
FAQ
What is the maximum operating frequency supported by the 6116LA25TPG?
The 6116LA25TPG does not operate on a clock; it is an asynchronous SRAM. Its 25ns access time corresponds to a maximum effective cycle rate of ~40 MHz under ideal conditions (tRC = 25ns), but actual system throughput depends on address setup/hold, CS/OE/WE timing margins, and bus contention. The device guarantees tRC ≤ 25ns across 0°C to +70°C at VCC = 4.5–5.5V.
Does the 6116LA25TPG require a refresh circuit?
No, the 6116LA25TPG is a fully static RAM and requires no refresh circuitry or periodic access to retain data. Its CMOS latch-based memory cells maintain state indefinitely as long as VCC remains within specification and CS is asserted appropriately. This eliminates refresh overhead in MCU-based systems and simplifies timing-critical designs.
Can the 6116LA25TPG be used with a 3.3V microcontroller?
The 6116LA25TPG is specified for 5V operation (VCC = 4.5–5.5V) and TTL-compatible I/O thresholds. Direct interface with 3.3V MCUs is not recommended without level translation, as VIH minimum (2.2V) may not be reliably met and VOH could exceed 3.3V-tolerant inputs. Use dedicated 5V–3.3V translators or select a 3.3V-compatible SRAM alternative.
What is the significance of "LA" in the 6116LA25TPG part number?
The "LA" denotes the low-power variant of the IDT6116 family, distinguishing it from the standard-power "SA" version. The 6116LA25TPG features reduced active and standby currents (e.g., ISB1 = 0.1mA typ vs. 2mA for SA), plus guaranteed 2V data retention-enabling battery backup operation not available in SA variants.
Is the 6116LA25TPG RoHS compliant and lead-free?
Yes, the 6116LA25TPG is a green part per Renesas' ordering information, meaning it complies with RoHS Directive 2011/65/EU and is lead-free. The "G" suffix in the package code (TPG) explicitly indicates green/lead-free construction, and the device meets JEDEC J-STD-609 Category 1 marking requirements.
6116LA25TPG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-PDIP
6116LA25TPG FAQ
1.How can I place an order for 6116LA25TPG through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA25TPG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA25TPG reliable?
The price and inventory of 6116LA25TPG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA25TPG is usually 5 days.
3.What payment methods are accepted for 6116LA25TPG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA25TPG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA25TPG?
6116LA25TPG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA25TPG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA25TPG?
For technical support, including 6116LA25TPG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA25TPG requirements.
6.How does Aetrix verify that 6116LA25TPG is sourced from the original manufacturer or authorized distributors?
All 6116LA25TPG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA25TPG meets industry standards.
7.What is the process for return or replacement of 6116LA25TPG?
All 6116LA25TPG units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA25TPG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA25TPG part is unused and in its original packaging.
Return procedure for 6116LA25TPG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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