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Renesas 6116LA45DB
- Part No.:
- 6116LA45DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA45DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,383
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Product details
Overview
The 6116LA45DB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 45ns access time, military-grade temperature range (–55°C to +125°C), ceramic DIP-24 package, and 2V data retention capability. It operates at 5.0V ±10%, supports TTL-compatible I/O, and requires no refresh or clocking - ideal for ruggedized avionics and defense systems requiring nonvolatile backup memory.
For engineers reviewing the 6116LA45DB datasheet, 6116LA45DB pinout, 6116LA45DB application, or 6116LA45DB equivalent, this page delivers verified timing specs (tAA = 45ns, tRC = 45ns), standby current (ISB = 40mA @ TTL level), data retention current (ICCDR = 0.5–1.5µA), and military qualification per MIL-STD-883 Class B - all confirmed from Renesas' official 2020 datasheet.
Technical Context
This device implements fully static asynchronous logic with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its architecture enables three distinct operational modes: active read/write (CS = L), high-impedance standby (CS = H), and ultra-low-power data retention (VCC ≥ 2.0V, CS = H).
It uses advanced CMOS process technology to eliminate alpha-particle soft errors and ensure reliability in radiation-prone environments. Input/output voltage thresholds (VIH = 2.2V min, VIL = 0.8V max) and leakage currents (|ILI| ≤ 5µA) are guaranteed across the full military temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 45ns max - defines minimum address-to-valid-data delay in read cycles |
| Read Cycle Time (tRC) | 45ns max - sets shortest interval between successive read operations |
| Supply Voltage | 5.0V ±10% - compatible with standard TTL/CMOS logic rails |
| Data Retention Voltage | 2.0V min - enables battery-backed operation without system power |
| Standby Current (ISB) | 40mA max (TTL-level CS) - reduces system power during idle states |
| Operating Temperature | –55°C to +125°C - qualified for military-grade environmental stress |
Pinout & Package
Package: 24-pin ceramic dual in-line package (CDIP), 600 mil width, hermetically sealed for high-reliability applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path supporting read and write transfers |
| CS | Chip Select | Active-low enable controlling device activation and standby entry |
| WE | Write Enable | Active-low signal initiating write cycle when CS is asserted |
| OE | Output Enable | Active-low control enabling output drivers during read operations |
| VCC | Power Supply | +5V supply input with ±10% tolerance and 2V minimum for retention |
| GND | Ground Reference | 0V return path for all digital and power circuits |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V with ICCDR ≤ 1.5µA - enables long-term memory hold on coin-cell batteries |
| Zero-refresh static architecture | No clocks or periodic refresh required - simplifies timing design and eliminates refresh overhead |
| TTL-compatible I/O levels | VIH ≥ 2.2V, VIL ≤ 0.8V - interoperable with legacy 5V TTL systems without level-shifting |
| MIL-STD-883 Class B compliance | Fully tested per military screening standards - ensures reliability in high-vibration, extreme-temperature deployments |
| Low-alpha CMOS process | Eliminates soft-error upsets from cosmic radiation - critical for aerospace and defense computing |
Applications
| Avionics Flight Control Memory | Tactical Radio Configuration Storage |
|---|---|
Use Scenario: Storing real-time flight parameter lookup tables and fail-safe control state in airborne mission computers. IC Role / Device Role / Timing Role: Nonvolatile configuration SRAM holding critical control vectors during power transitions and brownouts. Use Value: 2V data retention ensures uninterrupted state preservation during engine start-up transients or auxiliary power loss. | Use Scenario: Holding encrypted channel maps, encryption keys, and frequency-hopping sequences in manpack radios. IC Role / Device Role / Timing Role: Secure, tamper-resistant memory buffer with fast 45ns access for real-time waveform reconfiguration. Use Value: MIL-STD-883 qualification guarantees operation under shock, vibration, and thermal cycling encountered in field deployment. |
| Missile Guidance System Cache | Secure Embedded Crypto Module |
Use Scenario: Caching guidance trajectory coefficients and inertial measurement calibration data in seeker electronics. IC Role / Device Role / Timing Role: High-reliability static RAM interfacing directly with FPGA-based guidance processors via parallel bus. Use Value: 45ns tAA enables tight loop timing for real-time correction calculations without pipeline stalls. | Use Scenario: Storing ephemeral session keys and intermediate cryptographic results in hardware security modules. IC Role / Device Role / Timing Role: Low-leakage (≤5µA) SRAM preventing key exposure during sleep mode or power interruption. Use Value: Ultra-low ISB1 (0.1–0.9mA) and CMOS-level standby reduce attack surface for side-channel analysis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA45DB | Standard-power variant; ISB = 45mA (vs. LA's 40mA); no 2V data retention | Suitable where battery backup is unnecessary and higher standby current is acceptable | Select when cost sensitivity outweighs low-power requirements and retention is not needed |
| IS61LV256AL-10TLI | 3.3V-only, 10ns access, SOIC-28; no MIL-STD-883 qualification | Targets commercial industrial designs needing speed and density, not military ruggedness | Choose for modern 3.3V systems prioritizing performance over environmental certification |
Compared with 6116LA45DB, the 6116SA45DB trades data retention and lower standby power for marginally higher speed tolerance, while the IS61LV256AL-10TLI offers faster access and higher density but lacks military qualification and 5V compatibility - making the 6116LA45DB irreplaceable for legacy 5V, battery-backed, MIL-spec deployments.
Availability
The 6116LA45DB is available at Aetrix Electronics and suitable for avionics subsystems, tactical communications hardware, and missile guidance electronics requiring stable component supply under extended lifecycle management.
Supply support for 6116LA45DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116LA45DB belongs to Renesas' legacy CMOS SRAM product line, engineered specifically for high-reliability, battery-backed, military-qualified memory applications where zero-refresh operation and radiation tolerance are mandatory.
FAQ
What is the maximum operating temperature range for the 6116LA45DB?
The 6116LA45DB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B. This specification is confirmed in the Renesas datasheet revision dated July 17, 2020, under "Recommended Operating Temperature and Supply Voltage" and "Absolute Maximum Ratings" tables.
Does the 6116LA45DB support true data retention at 2V?
Yes - the 6116LA45DB guarantees data retention at VCC ≥ 2.0V, with ICCDR ≤ 1.5µA across all temperature ranges. This is explicitly documented in the "Data Retention Characteristics" table (3089 tbl 10) and illustrated in Figure 3 ("Low VCC Data Retention Waveform") of the Renesas datasheet.
Is the 6116LA45DB pin-compatible with the 6116SA45DB?
Yes - both 6116LA45DB and 6116SA45DB use identical CD24 (600-mil ceramic DIP) packaging and share identical pin functions, pin numbering, and electrical interface definitions per the "Pin Description" table (3089 tbl 01) and "Pin Configurations" diagram (3089 drw 02). Only power and retention behavior differ.
What is the standby current specification for the 6116LA45DB?
The 6116LA45DB has two standby current modes: ISB = 40mA max (TTL-level CS > VIH) and ISB1 = 0.9mA max (CMOS-level CS > VHC with VIN < VLC or > VHC). These values are specified in Table 8 (3089 tbl 08) of the Renesas datasheet and apply across the full military temperature range.
Can the 6116LA45DB be used in new designs despite its legacy status?
Yes - although originally introduced decades ago, the 6116LA45DB remains actively supported by Renesas with documented availability, updated ordering information (2020), and no obsolescence notice. Its unique combination of MIL-STD-883 qualification, 2V retention, and 5V TTL compatibility sustains demand in certified defense and aerospace programs.
6116LA45DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA45DB FAQ
1.How can I place an order for 6116LA45DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA45DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA45DB reliable?
The price and inventory of 6116LA45DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA45DB is usually 5 days.
3.What payment methods are accepted for 6116LA45DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA45DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA45DB?
6116LA45DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA45DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA45DB?
For technical support, including 6116LA45DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA45DB requirements.
6.How does Aetrix verify that 6116LA45DB is sourced from the original manufacturer or authorized distributors?
All 6116LA45DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA45DB meets industry standards.
7.What is the process for return or replacement of 6116LA45DB?
All 6116LA45DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA45DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA45DB part is unused and in its original packaging.
Return procedure for 6116LA45DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA45DB Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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