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Renesas 6116LA45TDB
- Part No.:
- 6116LA45TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116LA45TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,553
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Product details
Overview
The 6116LA45TDB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 45ns maximum access time, military-grade temperature range (–55°C to +125°C), ceramic 24-pin DIP (SD24) package, and 2V data retention capability. It operates at 5.0V ±10%, supports TTL-compatible I/O, and delivers 0.1mA full-standby current for battery-backed memory applications in avionics and ruggedized control systems.
For engineers reviewing the 6116LA45TDB datasheet, 6116LA45TDB pinout, 6116LA45TDB application, or 6116LA45TDB equivalent, key selection criteria include its MIL-STD-883 Class B compliance, 2V data retention voltage, 45ns read cycle time, ceramic DIP packaging for thermal/mechanical robustness, and compatibility with legacy 2K×8 SRAM-based address/data bus architectures.
Technical Context
This device implements a fully static asynchronous memory architecture with no clocks or refresh required. Its control logic uses CS-driven standby mode (ISB1 = 0.1mA at CMOS-level chip select) and dual enable inputs (OE for output gating, WE for write strobing), enabling precise timing control in deterministic real-time systems.
The memory array is organized as 128 × 128 bits with integrated address decoder, I/O control, and input data circuitry. All DC and AC parameters-including tRC = 45ns, tAA = 45ns, and tOE = 25ns-are guaranteed across the full –55°C to +125°C military temperature range per MIL-STD-883 Class B test flow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), supporting byte-wide parallel data buses without external multiplexing |
| Access Time | 45ns max (tRC), enabling operation in 22.2 MHz synchronous bus environments |
| Supply Voltage | 5.0V ±10%, compatible with standard TTL/CMOS logic rails and legacy 5V system designs |
| Data Retention | 2.0V minimum VCC, allowing backup from coin-cell batteries or low-voltage hold-up circuits |
| Standby Current | 0.1mA (ISB1), reducing power draw by >95% vs active mode in sleep-state embedded controllers |
| Operating Temp | –55°C to +125°C, qualified per MIL-STD-883 Class B for deployment in aerospace, defense, and downhole equipment |
| Package | Ceramic 24-pin DIP (SD24), providing hermetic sealing, high thermal conductivity, and mechanical stability under shock/vibration |
Pinout & Package
Package: Ceramic 24-pin Dual In-line Package (SD24), 0.300-inch width, hermetically sealed, RoHS-compliant "Green" variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 row/column selections for full 2K-word access |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path supporting simultaneous read/write without external transceivers |
| CS | Chip Select | Active-low enable controlling full-device standby entry (ISB1) when driven above VHC |
| WE | Write Enable | Active-low signal qualifying write cycles; must overlap low CS to initiate data latching |
| OE | Output Enable | Active-low gate for output drivers; high-Z state prevents bus contention during reads or idle periods |
| VCC | Power Supply | +5V supply pin with 4.5–5.5V operating window and decoupling capacitor requirement |
| GND | Ground Reference | Signal and power return path; requires low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates at 2.0V VCC with ICCDR ≤ 0.5µA (typ), enabling multi-year retention on CR2032 cells |
| Full military qualification | MIL-STD-883 Class B tested across –55°C to +125°C, including burn-in, thermal cycling, and hermeticity |
| TTL-compatible I/O | VIH = 2.2V min, VIL = 0.8V max, eliminating level-shifter requirements in mixed-logic systems |
| Zero-refresh static operation | No clock, timer, or external refresh circuitry needed-reduces BOM count and firmware complexity |
| Low-alpha CMOS process | Virtually eliminates soft errors from cosmic radiation, critical for flight-critical avionics memory |
Applications
| Avionics Flight Control Memory | Secure Military Radio Buffer |
|---|---|
Use Scenario: Storing real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs subject to extreme thermal cycling and EMI. IC Role / Device Role / Timing Role: Non-volatile configuration store accessed via parallel bus during boot and runtime parameter updates. Use Value: 2V data retention ensures integrity during brown-out events; MIL-STD-883 qualification guarantees reliability across 20,000+ flight hours. | Use Scenario: Holding encrypted voice packet buffers in manpack radios deployed in desert and arctic environments. IC Role / Device Role / Timing Role: Low-power SRAM buffer interfacing directly to FPGA-based crypto engines using shared 8-bit data/address bus. Use Value: 0.1mA ISB1 current extends battery life >3× vs standard SRAM; ceramic DIP withstands sand/dust ingress and thermal shock. |
| Downhole Oilfield Telemetry Cache | Ruggedized Industrial PLC Data Log |
Use Scenario: Capturing high-speed pressure/temperature samples in MWD (Measurement While Drilling) tools operating at 175°C ambient. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for transient telemetry bursts before transmission to surface units. Use Value: Guaranteed 45ns tRC at +125°C enables deterministic sampling rates up to 22 MSPS; hermetic SD24 package prevents hydrocarbon vapor penetration. | Use Scenario: Logging machine state variables in factory-floor PLCs exposed to vibration, ESD, and wide ambient swings. IC Role / Device Role / Timing Role: Battery-backed RAM for retaining last-known operational state during mains failure or maintenance shutdowns. Use Value: 2V retention voltage allows use of low-cost 2.4V NiMH backup; –55°C start-up capability ensures cold-weather deployment readiness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3V-only supply, 10ns access, 44-pin TSOP-II, no military temp grade | Designed for modern low-voltage embedded systems; lacks 2V retention and MIL-STD-883 qualification | Select only for cost-sensitive commercial designs where 5V compatibility and extended temperature are not required |
| CY62167EV30LL-45ZSXI | 5V/3.3V selectable VCC, 45ns access, 44-pin SOJ, industrial temp only (–40°C to +85°C) | Offers wider voltage flexibility but no military qualification or ceramic packaging | Preferable for industrial upgrades needing pin-compatible replacement without board redesign, but not for new mil-aero designs |
Compared with IS61LV25616AL-10TLI and CY62167EV30LL-45ZSXI, the 6116LA45TDB uniquely combines MIL-STD-883 Class B certification, 2V data retention, and hermetic ceramic DIP packaging-making it irreplaceable in safety-critical, long-lifecycle, or extreme-environment deployments where reliability outweighs speed or density.
Availability
The 6116LA45TDB is available at Aetrix Electronics and suitable for avionics flight control, secure military radio, downhole telemetry, and ruggedized industrial PLC applications requiring stable component supply over extended product lifecycles.
Supply support for 6116LA45TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116LA45TDB belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for mission-critical applications demanding MIL-STD-883 qualification, extended temperature operation, and ultra-low standby power with battery backup capability.
FAQ
What is the guaranteed maximum access time for the 6116LA45TDB across its full operating temperature range?
The 6116LA45TDB guarantees a maximum access time (tRC) of 45ns across its full military temperature range of –55°C to +125°C, as validated per MIL-STD-883 Class B test conditions. This value is production-tested and applies to both read and write cycle timing under worst-case voltage (4.5V) and temperature extremes.
Does the 6116LA45TDB support true data retention at 2.0V, and what is the typical current draw in that mode?
Yes, the 6116LA45TDB supports guaranteed data retention at VCC = 2.0V, with typical data retention current (ICCDR) of 0.5µA at +25°C and ≤2µA across the full –55°C to +125°C range. This enables reliable multi-year storage on primary lithium or rechargeable NiMH backup cells without external regulation.
Is the 6116LA45TDB pin-compatible with earlier IDT-branded versions of the same part number?
Yes, the 6116LA45TDB is a direct Renesas rebrand of the original IDT6116LA45TDB, maintaining identical pinout, electrical specifications, timing behavior, and SD24 ceramic DIP package dimensions. No PCB layout changes are required when migrating from IDT to Renesas-sourced units.
What is the meaning of "TDB" in the 6116LA45TDB part number, and how does it differ from "DB" or "SOG" suffixes?
"TDB" denotes the SD24 ceramic DIP package with tape-and-reel delivery (T) and military temperature grade (DB = "DIP, military"). In contrast, "DB" alone indicates tube packaging, while "SOG" refers to gull-wing SOIC packages. The TDB variant ensures automated placement compatibility and meets MIL-STD-883 handling requirements.
Can the 6116LA45TDB be used in systems requiring zero-refresh operation and immunity to alpha particle-induced soft errors?
Yes, the 6116LA45TDB uses a specialized CMOS process that virtually eliminates alpha particle soft-error rates and requires no refresh cycles due to its fully static architecture. This makes it suitable for radiation-prone environments such as aircraft avionics, space-qualified subsystems, and nuclear instrumentation where data integrity must be maintained indefinitely without intervention.
6116LA45TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA45TDB FAQ
1.How can I place an order for 6116LA45TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA45TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA45TDB reliable?
The price and inventory of 6116LA45TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA45TDB is usually 5 days.
3.What payment methods are accepted for 6116LA45TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA45TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA45TDB?
6116LA45TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA45TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA45TDB?
For technical support, including 6116LA45TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA45TDB requirements.
6.How does Aetrix verify that 6116LA45TDB is sourced from the original manufacturer or authorized distributors?
All 6116LA45TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA45TDB meets industry standards.
7.What is the process for return or replacement of 6116LA45TDB?
All 6116LA45TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA45TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA45TDB part is unused and in its original packaging.
Return procedure for 6116LA45TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA45TDB Tags
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AT24C02C-XHM-T
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