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Renesas 6116LA55TDB
- Part No.:
- 6116LA55TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116LA55TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,615
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Product details
Overview
6116LA55TDB from Renesas Electronics is a 16K-bit (2K × 8) low-power CMOS static RAM with 55 ns access time, industrial-grade ceramic DIP-24 packaging, and 2 V data retention capability. It operates across –55°C to +125°C, supports TTL-compatible I/O, requires no refresh or clock, and delivers standby current as low as 0.1 mA for battery-backed systems in avionics and military control units.
For engineers reviewing the 6116LA55TDB datasheet, 6116LA55TDB pinout, 6116LA55TDB application, or 6116LA55TDB equivalent, key selection criteria include military temperature compliance, sub-1 µA data retention current at 2 V, ceramic DIP-24 mechanical robustness, and compatibility with legacy 6116-family address/data bus architectures.
Technical Context
This device implements fully static asynchronous operation using high-reliability CMOS technology, eliminating alpha-particle soft-error susceptibility. Its dual-mode power management includes TTL-level standby (ISB = 40 mA max) and CMOS-level full standby (ISB1 = 0.1–0.9 mA), triggered by CS > VHC.
The memory array is organized as 128 × 128, with address decoding and I/O control logic integrated on-die. All timing parameters-including tAA (55 ns), tRC (55 ns), tOE (25 ns), and tWHZ (5 ns)-are guaranteed over the full military temperature range (–55°C to +125°C) per MIL-STD-883 Class B.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), enabling byte-wide data access without external multiplexing |
| Access Time (tAA) | 55 ns max at VCC = 5.0 V ±10%, ensuring deterministic read latency in hard real-time control loops |
| Data Retention Voltage | 2.0 V min (LA version only), allowing direct connection to backup coin-cell batteries without regulation |
| Standby Current (ISB1) | 0.1 mA max at VCC = 5.5 V, supporting multi-year battery life in unpowered storage mode |
| Operating Temperature | –55°C to +125°C, qualified to MIL-STD-883 Class B for deployment in engine bays and radar subsystems |
| Package | Ceramic DIP-24 (SD24), providing hermetic sealing and thermal stability under thermal shock |
| I/O Compatibility | TTL-compatible inputs/outputs, enabling direct interface with legacy 74LS and 74F logic families |
Pinout & Package
6116LA55TDB is housed in a 24-pin ceramic dual in-line package (CDIP), designated SD24 per Renesas ordering nomenclature. The package features 300-mil body width, through-hole mounting, and hermetic ceramic construction for high-reliability environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 row/column select; no latching required due to static architecture |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance during standby or when CS = HIGH |
| CS | Chip Select | Active-low enable controlling both active operation and CMOS-level standby entry (ISB1) |
| WE | Write Enable | Active-low signal gating write cycles; must be LOW concurrently with CS for valid write |
| OE | Output Enable | Active-low control for output drivers; enables tristate behavior independent of WE |
| VCC | Power Supply | +5.0 V ±10% supply; powers core logic and I/O buffers; decoupling required per MIL-STD-883 |
| GND | Ground Reference | Signal and power return; requires low-inductance connection to minimize noise coupling in mixed-signal boards |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh cycles needed-simplifies system timing design and eliminates DRAM controller overhead |
| Battery Backup Support | Guaranteed data retention at 2 V with ICCDR ≤ 0.5 µA (typ), enabling seamless switchover in mission-critical black-box recorders |
| MIL-STD-883 Class B Compliance | Fully tested to military screening standards including burn-in, temperature cycling, and hermeticity-ensuring field reliability in aerospace platforms |
| Low Alpha-Rate CMOS | Advanced fabrication virtually eliminates soft errors from cosmic radiation, critical for flight control memory buffers |
| TTL-Compatible Interface | Direct connection to legacy microprocessor buses (e.g., Z80, 8085, 68000) without level-shifting circuitry |
Applications
| Avionics Data Logger | Military Radar Memory Buffer |
|---|---|
Use Scenario: Continuous recording of flight sensor telemetry with power-loss resilience during engine restart sequences. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding last 2K samples; retains data during 2 V brownout via internal retention mode. Use Value: Eliminates need for external EEPROM write cycles, reducing latency and wear while meeting DO-160E power-interruption requirements. | Use Scenario: Storing intermediate FFT coefficients in airborne pulse-Doppler radar front-end processing. IC Role / Device Role / Timing Role: High-speed 55 ns read/write memory interfaced directly to FPGA-based signal processor with no wait states. Use Value: Enables real-time coefficient buffering at 18 MHz sustained bandwidth (1/tRC), meeting STANAG 4624 latency constraints. |
| Secure Communications Module | Industrial PLC Configuration Store |
Use Scenario: Holding cryptographic keys and session tokens in encrypted SATCOM modems operating in extended temperature environments. IC Role / Device Role / Timing Role: Tamper-resistant memory element with MIL-qualified packaging and 2 V retention for zero-power key persistence. Use Value: Maintains FIPS 140-2 Level 3 key integrity during vehicle power-down without supplemental supercapacitors or regulators. | Use Scenario: Storing ladder logic configuration and I/O mapping tables in oilfield programmable logic controllers exposed to desert thermal cycling. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining firmware state across –40°C to +85°C ambient swings with no refresh circuitry. Use Value: Reduces BOM count by replacing battery-backed NVSRAM + controller IC with single-component solution compliant to IEC 61000-4-2/4-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3 V supply, 10 ns access, 256K × 16 organization, TQFP-44 package | Higher density and speed but incompatible voltage and pinout; requires PCB redesign and level translation | Select only when migrating to 3.3 V systems with increased memory depth and faster timing budgets |
| AS6C4008-55PCN | 5 V supply, 55 ns access, 512K × 8 organization, PDIP-28 package | Larger capacity and same speed grade but larger footprint and higher active current (ICC1 = 45 mA vs. 85 mA) | Choose for cost-sensitive industrial designs where board space permits larger DIP and higher power is acceptable |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the 6116LA55TDB uniquely satisfies legacy 5 V military systems requiring hermetic ceramic packaging, 2 V data retention, and MIL-STD-883 qualification-without voltage translation or layout changes.
Availability
6116LA55TDB is available at Aetrix Electronics and suitable for avionics data loggers, military radar memory buffers, secure communications modules, and industrial PLC configuration stores requiring stable component supply across extended temperature and long lifecycle programs.
Supply support for 6116LA55TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116LA55TDB belongs to Renesas' legacy CMOS Static RAM product line, designed specifically for high-reliability, long-lifecycle embedded systems where MIL-STD-883 compliance, data retention, and hermetic packaging are mandatory.
FAQ
What is the maximum operating temperature range certified for the 6116LA55TDB?
The 6116LA55TDB is certified for operation from –55°C to +125°C and complies with MIL-STD-883 Class B environmental testing requirements. This rating is explicitly confirmed in the Renesas datasheet revision dated July 17, 2020, and applies to the SD24 ceramic DIP package variant. No derating is required within this full range.
Does the 6116LA55TDB support true data retention at 2 V, and what is the typical current draw in that mode?
Yes, the 6116LA55TDB supports guaranteed data retention at VCC = 2.0 V minimum. Per the datasheet's "Data Retention Characteristics" table, typical data retention current (ICCDR) is 0.5 µA at 2.0 V and 25°C, with a maximum of 200 µA across the full military temperature range. This enables direct coin-cell backup without regulation.
Is the 6116LA55TDB pin-compatible with other 6116-series variants such as the 6116SA55TDB?
Yes, the 6116LA55TDB shares identical pinout, package (SD24 ceramic DIP-24), and functional interface with all 6116SA/LA variants, including the 6116SA55TDB. Both use the same address/data/control signal mapping and electrical interface-only power consumption and retention capability differ between LA (low-power) and SA (standard-power) versions.
What is the guaranteed read cycle time (tRC) for the 6116LA55TDB, and how does it relate to access time?
The guaranteed read cycle time (tRC) for the 6116LA55TDB is 55 ns maximum, matching its tAA (address access time). This means the device supports consecutive reads at up to 18.2 MHz (1/55 ns) without wait states, provided address setup/hold and CS/OE timing constraints are met per the AC Electrical Characteristics table.
Can the 6116LA55TDB be used in new designs, or is it marked as obsolete?
The 6116LA55TDB remains actively supported by Renesas for legacy and long-lifecycle programs. While earlier revisions carried "Not recommended for new designs" (removed February 2001), the July 2020 datasheet rebranding confirms continued availability and qualification-particularly for defense and aerospace applications requiring MIL-STD-883 compliance and hermetic packaging.
6116LA55TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA55TDB FAQ
1.How can I place an order for 6116LA55TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA55TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA55TDB reliable?
The price and inventory of 6116LA55TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA55TDB is usually 5 days.
3.What payment methods are accepted for 6116LA55TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA55TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA55TDB?
6116LA55TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA55TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA55TDB?
For technical support, including 6116LA55TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA55TDB requirements.
6.How does Aetrix verify that 6116LA55TDB is sourced from the original manufacturer or authorized distributors?
All 6116LA55TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA55TDB meets industry standards.
7.What is the process for return or replacement of 6116LA55TDB?
All 6116LA55TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA55TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA55TDB part is unused and in its original packaging.
Return procedure for 6116LA55TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA55TDB Tags
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AT24C02C-XHM-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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