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Renesas 6116LA70DB
- Part No.:
- 6116LA70DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA70DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,417
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Product details
Overview
6116LA70DB from Renesas Electronics is a 16K-bit (2K × 8) CMOS static RAM with military-grade temperature range (–55°C to +125°C), 70ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates without clocks or refresh and supports standby power mode via chip select. Used in avionics, defense systems, and ruggedized industrial controllers requiring nonvolatile SRAM persistence.
For engineers reviewing the 6116LA70DB datasheet, 6116LA70DB pinout, 6116LA70DB application, or 6116LA70DB equivalent, key selection criteria include military-grade reliability, 2V data retention capability, ceramic DIP-24 packaging, low standby current (0.1mA typical), and compatibility with legacy 5V TTL bus architectures.
Technical Context
The 6116LA70DB implements fully static asynchronous operation using high-reliability CMOS technology, eliminating refresh circuitry and clock dependencies. Its control logic uses independent CS, OE, and WE inputs to manage read/write cycles and high-impedance I/O states, with timing governed by tRC (70ns), tAA (70ns), and tOE (25ns).
It features dual standby modes: TTL-level (ISB = 35mA max) and CMOS-level (ISB1 = 0.1mA typical), activated by CS voltage thresholds (VIH ≥ 2.2V, VHC = VCC – 0.2V). Data retention at 2V is exclusive to the LA variant and validated across the full military temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 70ns max - defines minimum address-to-data-valid delay in read cycles |
| Supply Voltage | 5.0V ±10% - compatible with standard 5V TTL logic rails |
| Data Retention Voltage | 2.0V min - enables low-power battery backup without external regulators |
| Standby Current (ISB1) | 0.1mA typical - enables ultra-low-power hold mode during system sleep |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for mission-critical environments |
| Package | Ceramic 24-pin DIP (CD24) - hermetically sealed, high-reliability, leaded through-hole |
Pinout & Package
6116LA70DB is housed in a 24-pin ceramic dual in-line package (CD24), 600-mil width, with industry-standard pin spacing and hermetic sealing for harsh-environment reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path for read/write operations; high-impedance when disabled |
| CS | Chip Select | Active-low enable; forces device into standby (ISB1) when HIGH |
| WE | Write Enable | Active-low control for write cycles; latches data on falling edge with CS LOW |
| OE | Output Enable | Active-low control for read output drivers; disables outputs when HIGH |
| VCC | Power Supply | +5V supply input; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground reference; separate grounding recommended for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates down to 2.0V with ≤0.5µA retention current - enables long-term memory hold on coin-cell batteries |
| CMOS process soft-error immunity | Virtually eliminates alpha-particle-induced bit flips - critical for radiation-prone aerospace/defense platforms |
| TTL-compatible I/O | Direct interface with legacy 5V microcontrollers and bus transceivers - no level-shifting required |
| No refresh or clock required | Fully static architecture eliminates dynamic RAM timing constraints and refresh controller overhead |
| MIL-STD-883 Class B compliance | Qualified for high-reliability military applications including screening, burn-in, and environmental stress testing |
Applications
| Avionics Flight Control Memory | Tactical Radio Configuration Storage |
|---|---|
Use Scenario: Storing real-time flight parameter tables and fail-safe control coefficients in airborne flight computers. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding critical configuration data during power transitions and brownouts. Use Value: 2V data retention ensures uninterrupted memory state during engine start-up transients or auxiliary power loss. | Use Scenario: Preserving encrypted channel maps, encryption keys, and calibration settings in handheld military radios. IC Role / Device Role / Timing Role: Secure, tamper-resistant memory storage with guaranteed data integrity over extended shelf life. Use Value: MIL-STD-883 qualification ensures operational reliability under shock, vibration, and extreme thermal cycling. |
| Hardened Industrial PLC I/O Cache | Space-Qualified Telemetry Buffer |
Use Scenario: Caching sensor input/output states in oilfield drilling controllers exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: High-speed, low-latency memory for deterministic I/O scan cycles in real-time control loops. Use Value: 70ns access time supports sub-100µs scan intervals while maintaining full military temperature operation. | Use Scenario: Temporary storage of spacecraft telemetry packets prior to downlink transmission in CubeSat payloads. IC Role / Device Role / Timing Role: Radiation-tolerant, low-power buffer enabling burst-mode data capture during orbital passes. Use Value: CMOS soft-error immunity and hermetic CD24 packaging meet space-grade reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA70DB | Same CD24 package and 70ns speed, but SA version lacks 2V data retention and draws higher standby current (35mA vs. 0.1mA) | Suitable for non-battery-backed systems where cost or availability outweighs low-power needs | Select only if battery backup is unnecessary and legacy SA stock is preferred |
| IS61LV256AL-70TLLI | 3.3V-only operation, SOIC-28 package, 256K × 8 organization - not pin-compatible; requires PCB redesign | Targets modern low-voltage embedded systems with larger memory footprint and surface-mount assembly | Choose only for new designs migrating to 3.3V architecture and higher density |
Compared with 6116LA70DB, 6116SA70DB offers identical speed and packaging but sacrifices battery retention and ultra-low standby power; IS61LV256AL-70TLLI provides greater capacity and lower voltage operation but demands board-level redesign and lacks military qualification.
Availability
6116LA70DB is available at Aetrix Electronics and suitable for avionics, defense electronics, and hardened industrial control systems requiring stable component supply, long-term obsolescence management, and traceable military-grade sourcing.
Supply support for 6116LA70DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116LA series was designed specifically for high-reliability, battery-backed memory applications in military and aerospace systems where data persistence, radiation tolerance, and extended temperature operation are mandatory.
FAQ
What is the maximum operating temperature range for the 6116LA70DB?
The 6116LA70DB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B. This specification is verified across all electrical parameters in the datasheet, including access time, standby current, and data retention, making it suitable for deployment in jet engine bays, missile guidance sections, and desert-deployed field equipment.
Does the 6116LA70DB require an external clock or refresh signal?
No, the 6116LA70DB is a fully static RAM and requires no clock or refresh signals. Its internal CMOS latch-based memory cells retain data indefinitely as long as VCC remains within specification and CS is asserted appropriately. This simplifies system design by eliminating refresh timing constraints and associated controller logic.
Can the 6116LA70DB retain data at 2V, and under what conditions?
Yes, the 6116LA70DB supports data retention at 2.0V minimum VCC, a feature exclusive to the LA variant. Retention is guaranteed across the full military temperature range (–55°C to +125°C) with typical ICCDR ≤ 0.5µA, enabling direct connection to lithium or silver-oxide coin cells without regulation.
Is the 6116LA70DB pin-compatible with other 6116 variants like the 6116SA70DB?
Yes, the 6116LA70DB shares identical pinout, package (CD24), and functional interface with the 6116SA70DB. However, the LA version adds 2V data retention and reduces standby current by >99% - both enhancements are backward-compatible and require no PCB changes.
What package type does the 6116LA70DB use, and why is it significant?
The 6116LA70DB uses a 24-pin ceramic DIP (CD24) package. This hermetically sealed, through-hole package provides superior moisture resistance, thermal stability, and mechanical robustness compared to plastic DIP or SOIC - essential for long-life deployments in high-humidity, high-vibration, or thermally cycled environments such as naval radar systems or satellite launch vehicles.
6116LA70DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA70DB FAQ
1.How can I place an order for 6116LA70DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA70DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA70DB reliable?
The price and inventory of 6116LA70DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA70DB is usually 5 days.
3.What payment methods are accepted for 6116LA70DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA70DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA70DB?
6116LA70DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA70DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA70DB?
For technical support, including 6116LA70DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA70DB requirements.
6.How does Aetrix verify that 6116LA70DB is sourced from the original manufacturer or authorized distributors?
All 6116LA70DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA70DB meets industry standards.
7.What is the process for return or replacement of 6116LA70DB?
All 6116LA70DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA70DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA70DB part is unused and in its original packaging.
Return procedure for 6116LA70DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA70DB Tags
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AT24C02C-XHM-T
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