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Renesas 6116LA90DB
- Part No.:
- 6116LA90DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116LA90DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,241
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Product details
Overview
6116LA90DB from Renesas Electronics is a 16K-bit (2K × 8) CMOS static RAM with military-grade temperature range (–55°C to +125°C), 90ns access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates without clocks or refresh, supports standby power mode via chip select, and is housed in a 24-pin ceramic DIP (CD24) package for high-reliability embedded systems.
For engineers reviewing the 6116LA90DB datasheet, 6116LA90DB pinout, 6116LA90DB application, or 6116LA90DB equivalent, this page delivers verified timing specs, military-grade DC/AC characteristics, pin-level functional roles, low-power retention behavior, and direct alternative part comparisons - all aligned to Renesas' July 2020 revision of the IDT6116SA/LA family specification.
Technical Context
The 6116LA90DB implements fully static asynchronous operation using advanced CMOS technology, eliminating alpha-particle soft-error susceptibility. Its control logic responds to independent CS, WE, and OE signals to manage read/write cycles and high-impedance I/O states without external clocking.
It features dual standby modes: TTL-level (ISB = 45mA max) and CMOS-level (ISB1 = 0.9µA max), enabling system-level power savings. Data retention at 2V (ICCDR ≤ 300µA) is exclusive to the LA variant and validated across the full military temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 90ns max at VCC = 5.0V ±10%, TA = –55°C to +125°C - defines minimum address-to-data valid delay in read cycles |
| Data Retention Voltage | 2.0V min - enables low-voltage backup operation without main supply |
| Standby Current (ISB1) | 0.9µA max at VCC = 5.5V, CMOS-level CS deassertion - critical for battery-powered hold mode |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for mission-critical environments |
| I/O Compatibility | TTL-compatible inputs and outputs - interfaces directly with 5V logic families without level shifters |
| Package | 24-pin ceramic DIP (CD24), 600-mil width - hermetically sealed for moisture resistance and thermal stability |
Pinout & Package
6116LA90DB is supplied in a 24-pin ceramic dual in-line package (CD24), 600-mil body width, with through-hole mounting and hermetic sealing compliant with MIL-STD-883 Class B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path for read/write operations; high-impedance when disabled |
| CS | Chip Select | Active-low enable; drives device into low-power standby (ISB1) when HIGH |
| WE | Write Enable | Active-low signal controlling write cycle initiation; latches data on falling edge |
| OE | Output Enable | Active-low control for output drivers; disables I/O pins to high-Z when HIGH |
| VCC | Power Supply | +5.0V ±10% main supply; powers core logic and I/O buffers |
| GND | Ground Reference | 0V return path for all internal circuits and I/O signaling |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh required - simplifies system timing design and eliminates dynamic power overhead |
| Battery Backup Retention | Operates at 2V with ≤300µA retention current - enables long-term data hold during main power loss |
| Military Qualification | MIL-STD-883 Class B compliance - ensures reliability in aerospace, defense, and harsh-environment applications |
| Low Alpha-Rate CMOS | Virtually eliminates soft errors from cosmic radiation - critical for fault-tolerant avionics and space systems |
| TTL-Compatible I/O | Direct interface with legacy 5V microcontrollers and peripherals - avoids level-shifter components and layout complexity |
Applications
| Avionics Data Logging | Tactical Radio Memory Buffer |
|---|---|
Use Scenario: Storing flight parameter snapshots during power interruption in unmanned aerial vehicles. IC Role / Device Role / Timing Role: Non-volatile data buffer retaining telemetry between main power cycles using 2V battery backup. Use Value: Guarantees 16K-bit data integrity over –55°C to +125°C without refresh, meeting DO-160 environmental stress requirements. | Use Scenario: Holding configuration tables and encryption keys in encrypted HF/VHF radios deployed in field conditions. IC Role / Device Role / Timing Role: Secure, fast-access memory for real-time key loading and channel mapping with sub-100ns latency. Use Value: 90ns access time and MIL-STD-883 qualification ensure deterministic response under vibration, shock, and wide-temperature operation. |
| Missile Guidance System Cache | Subsea Sensor Node Memory |
Use Scenario: Caching guidance trajectory updates during boost phase where power may be transient or interrupted. IC Role / Device Role / Timing Role: High-reliability SRAM providing immediate data access during inertial navigation computation bursts. Use Value: Hermetic CD24 package and zero-refresh static architecture prevent data corruption during high-G acceleration events. | Use Scenario: Storing sensor calibration coefficients and sampled pressure/temperature readings in deep-ocean monitoring buoys. IC Role / Device Role / Timing Role: Low-power retention memory preserving data during multi-week dormant periods powered by primary batteries. Use Value: 0.9µA CMOS-level standby current extends battery life while maintaining data integrity at 2V down to –55°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA90DB | Same 90ns speed, CD24 package, and military temp range, but standard-power SA version (no 2V retention) | Lacks battery backup capability; higher ISB1 (10µA vs. 0.9µA) and no VDR = 2V spec | Select when full 5V operation is guaranteed and retention during brownout is unnecessary |
| IS61LV256AL-10TLI | 3.3V-only, 10ns access, SOIC-28, industrial temp (–40°C to +85°C); no military qualification or 2V retention | Not suitable for legacy 5V systems or extreme-temperature deployment; incompatible voltage and package | Consider only for new 3.3V designs requiring faster access and lower active power, with relaxed environmental requirements |
Compared with 6116SA90DB and IS61LV256AL-10TLI, the 6116LA90DB uniquely combines military temperature rating, hermetic CD24 packaging, and verified 2V data retention - making it irreplaceable in legacy 5V systems requiring fail-safe memory hold during extended power loss.
Availability
6116LA90DB is available at Aetrix Electronics and suitable for avionics data logging, tactical radio memory buffering, missile guidance system caching, and subsea sensor node memory requiring stable component supply across extended lifecycle programs.
Supply support for 6116LA90DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116LA90DB belongs to the legacy IDT6116SA/LA family, designed specifically for high-reliability, non-refresh, battery-backed memory applications in military and aerospace systems where data integrity under extreme conditions is mandatory.
FAQ
What is the maximum operating temperature range for the 6116LA90DB?
The 6116LA90DB is rated for –55°C to +125°C operation and qualified per MIL-STD-883 Class B. This military-grade temperature range is confirmed in the Renesas datasheet revision dated July 17, 2020, and applies to all electrical specifications including access time, retention current, and leakage parameters.
Does the 6116LA90DB support true battery backup operation?
Yes, the 6116LA90DB supports true battery backup: it retains data at VCC = 2.0V with ICCDR ≤ 300µA across its full military temperature range. This capability is exclusive to LA variants and explicitly documented in Table 10 ("Data Retention Characteristics") of the Renesas datasheet.
What package type is used for the 6116LA90DB?
The 6116LA90DB uses a 24-pin ceramic dual in-line package (CD24), 600-mil width, as specified in the "Orderable Part Information" table (page 11) and "Pin Configurations" section (page 2) of the Renesas datasheet. This hermetic package meets MIL-STD-883 mechanical and environmental requirements.
Is the 6116LA90DB pin-compatible with the 6116SA90DB?
Yes, the 6116LA90DB and 6116SA90DB share identical pinout, package (CD24), and functional block diagram. Both comply with the same 2K × 8 organization and TTL-compatible I/O structure. However, the LA version adds 2V retention and lower standby current - no PCB changes are required for substitution where retention is not needed.
What is the standby current consumption of the 6116LA90DB in full CMOS-level standby mode?
In full CMOS-level standby mode (CS > VHC, VIN < VLC or VIN > VHC), the 6116LA90DB draws ISB1 ≤ 0.9µA at VCC = 5.5V and TA = –55°C to +125°C. This value is specified in Table 8 of the Renesas datasheet and enables ultra-low-power data retention during extended main-power outages.
6116LA90DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116LA90DB FAQ
1.How can I place an order for 6116LA90DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116LA90DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116LA90DB reliable?
The price and inventory of 6116LA90DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116LA90DB is usually 5 days.
3.What payment methods are accepted for 6116LA90DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116LA90DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116LA90DB?
6116LA90DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116LA90DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116LA90DB?
For technical support, including 6116LA90DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116LA90DB requirements.
6.How does Aetrix verify that 6116LA90DB is sourced from the original manufacturer or authorized distributors?
All 6116LA90DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116LA90DB meets industry standards.
7.What is the process for return or replacement of 6116LA90DB?
All 6116LA90DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116LA90DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116LA90DB part is unused and in its original packaging.
Return procedure for 6116LA90DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116LA90DB Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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