My Inquiry
My Account
Renesas 6116SA120DB
- Part No.:
- 6116SA120DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA120DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,923
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
6116SA120DB from Renesas Electronics is a 16K-bit (2K × 8) CMOS static RAM with 120ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50mA active current and ≤45mA standby current (TTL level), and uses a 24-pin ceramic DIP (CD24) package for high-reliability embedded control and avionics data buffering.
For engineers reviewing the 6116SA120DB datasheet, 6116SA120DB pinout, 6116SA120DB application, or 6116SA120DB equivalent, this page delivers verified timing specs, military temperature validation, DC/AC electrical parameters, pin-level functional roles, and direct alternative part guidance for legacy system sustainment and aerospace hardware refresh.
Technical Context
The 6116SA120DB implements fully static asynchronous operation-no clocks or refresh required-and features dual power modes: active read/write and TTL-level standby (CS HIGH). Its address decoder drives a 128 × 128 memory array, with input/output circuitry designed for direct TTL interfacing and low-alpha-particle soft-error susceptibility.
Control logic relies on three dedicated pins-CS, OE, and WE-with truth-table-defined modes: Standby (CS HIGH → high-Z I/O), Read (CS+OE LOW, WE HIGH), and Write (CS+WE LOW). Data retention is not supported (LA version only); this SA variant prioritizes speed and military environmental robustness over battery backup.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 120ns max at VCC = 5.0V ±10%, TA = –55°C to +125°C |
| Operating Temperature | –55°C to +125°C (military grade, MIL-STD-883 Class B compliant) |
| Supply Voltage | 4.5V to 5.5V - compatible with standard 5V TTL logic rails |
| Standby Current (ISB) | 45mA max (TTL-level CS HIGH), enabling low-power hold during idle cycles |
| I/O Compatibility | TTL-input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive (VOH ≥ 2.4V @ –4mA, VOL ≤ 0.4V @ 8mA) |
| Package | 24-pin ceramic DIP (CD24), 600-mil width, hermetically sealed for harsh environments |
Pinout & Package
6116SA120DB is housed in a 24-pin ceramic dual in-line package (CD24, 600-mil), optimized for thermal stability and long-term reliability in military/aerospace applications. Pin layout follows industry-standard 2K×8 SRAM configuration with single-ended address and bidirectional data bus.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance when CS or OE disabled |
| CS | Chip Select | Active-low enable; forces standby mode (high-Z I/O) when HIGH |
| OE | Output Enable | Active-low read control; disables output drivers when HIGH |
| WE | Write Enable | Active-low write control; latches data on falling edge with CS LOW |
| VCC | Power Supply | +5V supply pin; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground; separate grounding recommended for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Static Asynchronous Operation | No clock or refresh circuitry needed-simplifies timing-critical control systems |
| MIL-STD-883 Class B Compliance | Qualified for high-reliability military applications including avionics and defense electronics |
| TTL-Compatible Interface | Direct connection to legacy 5V microcontrollers and bus controllers without level-shifting |
| Low Alpha-Particle Sensitivity | CMOS process minimizes soft errors-critical for space-qualified and radiation-tolerant designs |
| Hermetic Ceramic Packaging | CD24 package ensures moisture resistance and thermal cycling endurance in extreme environments |
Applications
| Avionics Data Buffering | Secure Communications Module |
|---|---|
Use Scenario: Real-time buffering of sensor telemetry and flight control commands in UAV flight computers operating at –55°C to +125°C. IC Role / Device Role / Timing Role: High-reliability, non-refreshing SRAM storing critical state variables between processor interrupts. Use Value: 120ns access enables sub-microsecond response to hardware triggers; MIL-STD-883 qualification guarantees operation under vibration, shock, and thermal stress. | Use Scenario: Storing encrypted key material and packet headers in tactical radio transceivers deployed in desert or arctic conditions. IC Role / Device Role / Timing Role: Secure, fast-access memory for cryptographic state machines requiring deterministic latency and zero refresh overhead. Use Value: TTL compatibility allows direct integration with legacy FPGA-based crypto engines; ceramic DIP packaging resists humidity-induced corrosion in field-deployed units. |
| Industrial PLC I/O Expansion | Legacy Test Equipment Memory |
Use Scenario: Extending local memory in programmable logic controller backplanes where ambient temperature exceeds +85°C. IC Role / Device Role / Timing Role: Off-chip RAM supplementing microcontroller internal memory for ladder logic variable storage. Use Value: 120ns tAA supports scan times under 1ms; military temp range eliminates need for external cooling in enclosed cabinets. | Use Scenario: Replacement memory in discontinued automatic test equipment (ATE) platforms requiring exact form-fit-function compatibility. IC Role / Device Role / Timing Role: Drop-in SRAM replacement preserving original board layout and timing margins. Use Value: CD24 pinout matches legacy 24-pin DIP footprints; 120ns speed satisfies original design's worst-case timing budget without revalidation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA120TDB | Same speed (120ns), same military temp range, but SD24 (300-mil ceramic DIP) package | Requires PCB footprint change due to smaller body size and lead pitch | Select when board space is constrained and hermetic sealing remains mandatory |
| IS61C256AL-120MLI | 256K-bit (32K × 8), 120ns, industrial temp (–40°C to +85°C), SOIC-28 package | Higher density and surface-mount format; lacks MIL-STD-883 qualification and ceramic packaging | Choose for cost-sensitive industrial upgrades where military reliability is not required |
Compared with 6116SA120DB, 6116SA120TDB offers identical electrical and thermal performance in a physically smaller ceramic package, while IS61C256AL-120MLI provides greater capacity and modern packaging at the expense of military-grade assurance and through-hole compatibility.
Availability
6116SA120DB is available at Aetrix Electronics and suitable for avionics data buffering, secure communications modules, and industrial PLC I/O expansion requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 6116SA120DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116SA/LA family was developed for legacy system sustainment and high-reliability embedded applications demanding military-grade temperature performance, TTL interoperability, and proven static RAM architecture.
FAQ
What is the maximum operating temperature range for the 6116SA120DB?
The 6116SA120DB is rated for –55°C to +125°C operation and is qualified to MIL-STD-883 Class B, making it suitable for deployment in extreme environmental conditions such as airborne, missile, and ground vehicle systems where thermal cycling and long-term reliability are critical. This specification is guaranteed across all production units.
Does the 6116SA120DB support battery backup or data retention mode?
No, the 6116SA120DB does not support battery backup or low-voltage data retention. That capability is exclusive to the LA variant (e.g., 6116LA120DB), which specifies 2V data retention voltage and microamp-level retention current. The 6116SA120DB is optimized for speed and military reliability-not ultra-low-power hold states.
What package type is used for the 6116SA120DB?
The 6116SA120DB uses a 24-pin ceramic dual in-line package (CD24) with 600-mil width. This hermetically sealed ceramic DIP provides superior moisture resistance, thermal stability, and mechanical robustness compared to plastic packages-essential for mission-critical military and aerospace applications.
Is the 6116SA120DB pin-compatible with other 6116-series variants?
Yes, all 6116SA/LA variants-including 6116SA120DB-share identical 24-pin pinouts regardless of speed grade, temperature range, or package type (CD24, SD24, PTG24, PSG24). Signal assignments (A0–A10, I/O0–I/O7, CS, OE, WE, VCC, GND) are functionally and physically consistent across the family.
What is the standby current consumption of the 6116SA120DB?
The 6116SA120DB draws a maximum of 45mA in TTL-level standby mode (ISB), defined as CS > VIH with outputs open and f = fMAX. This value is measured at VCC = 5.5V and TA = +125°C, and reflects the device's ability to reduce system power during inactive periods without entering deep-sleep states.
6116SA120DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 120ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA120DB FAQ
1.How can I place an order for 6116SA120DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA120DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA120DB reliable?
The price and inventory of 6116SA120DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA120DB is usually 5 days.
3.What payment methods are accepted for 6116SA120DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA120DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA120DB?
6116SA120DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA120DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA120DB?
For technical support, including 6116SA120DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA120DB requirements.
6.How does Aetrix verify that 6116SA120DB is sourced from the original manufacturer or authorized distributors?
All 6116SA120DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA120DB meets industry standards.
7.What is the process for return or replacement of 6116SA120DB?
All 6116SA120DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA120DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA120DB part is unused and in its original packaging.
Return procedure for 6116SA120DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA120DB Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
