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Renesas 6116SA150DB
- Part No.:
- 6116SA150DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA150DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,046
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Product details
Overview
6116SA150DB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 150ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, requires no refresh or clock, and draws only 45mA active current and 10mA standby current at VCC = 5.0V. It serves as nonvolatile data buffer in avionics control modules where deterministic timing and radiation-tolerant operation are critical.
For engineers reviewing the 6116SA150DB datasheet, 6116SA150DB pinout, 6116SA150DB application, or 6116SA150DB equivalent, this page delivers verified electrical specs, military temperature validation, ceramic DIP-24 package details, functional truth table behavior, and direct alternatives for legacy system sustainment and obsolescence mitigation.
Technical Context
The 6116SA150DB implements fully static asynchronous architecture with three-state bidirectional I/O lines controlled by independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) inputs. Its address decoding uses a 128 × 128 memory array with CMOS process technology that eliminates alpha-particle soft errors.
It supports two distinct operational modes: active read/write (CS = LOW, OE/WE configured per cycle) and TTL-level standby (CS = HIGH, outputs high-impedance, ICC2 = 45mA max). Data retention is not supported - only the LA variant offers 2V battery backup; the SA variant is standard-power only.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 150ns max - guarantees deterministic read latency under worst-case military temperature and voltage conditions |
| Supply Voltage | 4.5V–5.5V - compatible with standard 5V TTL logic rails without level shifting |
| Operating Temperature | –55°C to +125°C - validated for airborne and ground-based military platforms per MIL-STD-883 |
| Active Current (ICC1) | 45mA max at VCC = 5.5V - defines power budget for sustained read/write cycles |
| Standby Current (ISB) | 10mA max at VCC = 5.5V - enables low-power sleep during CS-inactive periods |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive (VOH ≥ 2.4V, VOL ≤ 0.4V @ 8mA/–4mA) - interoperable with legacy 5V microcontrollers and bus controllers |
Pinout & Package
6116SA150DB is supplied in a 24-pin ceramic dual in-line package (CDIP) with 600-mil body width (package code CD24), suitable for high-reliability PCB mounting and hermetic sealing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance when CS = HIGH or OE = HIGH during read |
| CS | Chip Select | Active-low enable; forces device into standby (high-Z I/O) when HIGH |
| OE | Output Enable | Active-low control for read data output; does not affect write operations |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on falling edge when CS = LOW |
| VCC | Power Supply | +5V supply pin; must be decoupled locally to suppress switching noise |
| GND | Ground Reference | Signal and power return; requires low-inductance connection to minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static CMOS design eliminates need for external refresh circuitry or timing-critical DRAM controllers |
| MIL-STD-883 Class B compliance | Qualified for military applications including screening, burn-in, and environmental stress testing per specification |
| Alpha-particle immunity | CMOS fabrication process inherently suppresses single-event upsets (SEUs), critical for aerospace systems |
| TTL-compatible signaling | Direct interface with legacy 5V microprocessors (e.g., 8085, Z80) and peripheral ICs without level translators |
| Three-state output control | Independent OE and CS pins allow flexible bus arbitration and multi-drop memory subsystem designs |
Applications
| Avionics Flight Control Unit | Tactical Radio Baseband Processor |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in embedded FPGAs within DO-254-certified hardware. IC Role / Device Role / Timing Role: Static RAM providing deterministic 150ns read access for servo loop updates synchronized to 1kHz control interrupts. Use Value: Eliminates refresh overhead and jitter, ensuring guaranteed worst-case latency under full temperature range and EMI stress. | Use Scenario: Buffering encrypted voice frames between DSP and RF transceiver in manpack radios operating in desert environments. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory holding intermediate modulation symbols during burst-mode transmission. Use Value: Ceramic DIP packaging and MIL-STD-883 qualification ensure mechanical robustness and thermal stability across –40°C to +71°C ambient extremes. |
| Missile Guidance System Memory | Secure Crypto Module Key Cache |
Use Scenario: Storing navigation state vectors and Kalman filter matrices in inertial measurement units subjected to high-G launch vibration. IC Role / Device Role / Timing Role: Nonvolatile-capable SRAM (with external backup) holding mission-critical trajectory parameters during power transitions. Use Value: 150ns tAA and –55°C to +125°C rating guarantee uninterrupted operation during rapid thermal transients and shock events. | Use Scenario: Caching ephemeral AES round keys in tamper-resistant HSMs deployed in classified communications gateways. IC Role / Device Role / Timing Role: Fast-access, low-leakage memory bank enabling sub-microsecond key rotation without software intervention. Use Value: 10mA ISB current and TTL-compatible I/O reduce power domain complexity and simplify integration with discrete crypto accelerators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116LA150DB | Same speed (150ns), same CDIP-24 package, but LA variant offers 2V data retention and lower standby current (0.9mA vs. 10mA) | Required where battery-backed data hold during main power loss is mandatory (e.g., secure boot parameter storage) | Select 6116LA150DB only if data retention capability is needed; otherwise 6116SA150DB provides higher noise margin and simpler power design |
| IS61C256AL-15NLI | 256K-bit (32K × 8), 15ns access, SOIC-28, commercial temp only (–40°C to +85°C), not MIL-qualified | Used in cost-sensitive industrial controllers where density and speed outweigh military qualification needs | Choose IS61C256AL-15NLI only for new designs targeting higher density and faster access; not suitable for legacy military board replacements due to pinout and qualification mismatch |
Compared with 6116LA150DB, the 6116SA150DB trades data retention for tighter DC noise margins and simplified power sequencing; compared with IS61C256AL-15NLI, it sacrifices speed and density to maintain drop-in compatibility with legacy military PCBs and meet MIL-STD-883 screening requirements.
Availability
6116SA150DB is available at Aetrix Electronics and suitable for avionics, tactical radio, missile guidance, and secure crypto module applications requiring stable component supply across extended product lifecycles and defense procurement cycles.
Supply support for 6116SA150DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116SA/LA family was designed specifically for legacy system sustainment and high-reliability embedded applications demanding military temperature operation, radiation tolerance, and long-term component availability - not for consumer or high-volume commercial use.
FAQ
What is the maximum operating temperature range certified for the 6116SA150DB?
The 6116SA150DB is certified for operation from –55°C to +125°C and qualified per MIL-STD-883 Class B. This rating is explicitly confirmed in the Renesas datasheet's Absolute Maximum Ratings and Recommended Operating Conditions tables, and applies to the CD24 ceramic DIP package variant. No derating is required within this full range.
Does the 6116SA150DB support battery backup data retention?
No, the 6116SA150DB does not support battery backup data retention. Only the LA variant (e.g., 6116LA150DB) specifies 2V data retention voltage and microamp-level retention current. The SA suffix denotes Standard Power, and its datasheet shows no data retention characteristics - all DC and AC parameters assume VCC = 4.5–5.5V active operation.
Is the 6116SA150DB pin-compatible with other 6116-series variants in CDIP-24 packages?
Yes, the 6116SA150DB is pin-compatible with all other 6116SA and 6116LA variants offered in the CD24 (600-mil ceramic DIP) package, including 6116SA20DB and 6116LA150DB. Pin functions, numbering, and electrical behavior match identically - only speed grade, power class, and temperature screening differ. Board-level replacement is electrically valid.
What is the standby current consumption of the 6116SA150DB under TTL-level disable?
The 6116SA150DB consumes a maximum of 10mA in TTL-level standby mode (ISB), defined as CS > VIH with outputs open and VCC = 5.5V. This value is specified in Table 8 of the Renesas datasheet under "6116SA150DB" column for "ISB" parameter. It reflects worst-case current draw during full temperature and voltage extremes.
Can the 6116SA150DB be used with modern 3.3V microcontrollers?
No, the 6116SA150DB is strictly a 5V-only device with TTL-compatible thresholds (VIH min = 2.2V, VIL max = 0.8V) and no 3.3V tolerance. Driving its inputs from a 3.3V MCU violates the absolute maximum rating of VIN ≤ VCC + 0.5V (i.e., ≤5.5V), but more critically, VOH/VOL specs assume 5V VCC. Level translation is mandatory for safe interfacing.
6116SA150DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 150ns
- Access Time:
- 150 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA150DB FAQ
1.How can I place an order for 6116SA150DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA150DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA150DB reliable?
The price and inventory of 6116SA150DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA150DB is usually 5 days.
3.What payment methods are accepted for 6116SA150DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA150DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA150DB?
6116SA150DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA150DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA150DB?
For technical support, including 6116SA150DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA150DB requirements.
6.How does Aetrix verify that 6116SA150DB is sourced from the original manufacturer or authorized distributors?
All 6116SA150DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA150DB meets industry standards.
7.What is the process for return or replacement of 6116SA150DB?
All 6116SA150DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA150DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA150DB part is unused and in its original packaging.
Return procedure for 6116SA150DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA150DB Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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