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Renesas 6116SA25TDB
- Part No.:
- 6116SA25TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116SA25TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,708
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Product details
Overview
6116SA25TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 25ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, features automatic standby mode on chip select high, and uses 24-pin ceramic DIP (SD24) packaging for harsh-environment embedded memory applications.
For engineers reviewing the 6116SA25TDB datasheet, 6116SA25TDB pinout, 6116SA25TDB application, or 6116SA25TDB equivalent, this device serves as a drop-in replacement for legacy 2K×8 SRAMs in avionics, defense systems, and industrial controllers where radiation-hardened timing stability and extended temperature operation are critical.
Technical Context
This static RAM employs fully asynchronous, clockless architecture requiring no refresh cycles. Its dual-level standby control supports both TTL-level (ISB = 45mA max) and CMOS-level (ISB1 = 10mA max) chip deselect, enabling system-level power savings during idle periods without external logic.
The device integrates a 128×128 memory array with address decoding, I/O control, and input data circuitry-all fabricated in high-reliability CMOS to suppress alpha-particle soft errors. All 11 address lines (A0–A10), 8 bidirectional data lines (I/O0–I/O7), and three control inputs (CS, WE, OE) are directly TTL-compatible with VIH = 2.2V min and VIL = 0.8V max at VCC = 5.0V ±10%.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), enabling byte-wide data access without multiplexing |
| Access Time (tAA) | 25ns max at VCC = 5.0V ±10%, –55°C to +125°C - guarantees deterministic read latency in real-time systems |
| Supply Voltage | 4.5V to 5.5V - compatible with standard 5V TTL logic rails and legacy power domains |
| Operating Temperature | –55°C to +125°C - qualified for airborne, missile, and space-qualified platforms per MIL-STD-883 Class B |
| Standby Current (ISB) | 45mA max (TTL-level CS high) - reduces system power during inactive states without auxiliary circuitry |
| Input/Output Compatibility | TTL-compatible VIH/VIL thresholds - eliminates level-shifting requirements when interfacing with 74LS/ALS logic families |
| Package | 24-pin ceramic DIP (SD24, 300-mil width) - provides hermetic sealing and thermal robustness for high-reliability PCBs |
Pinout & Package
24-pin ceramic DIP (SD24) package with 300-mil width, hermetically sealed for military environmental resilience.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting full 2K address space; no address multiplexing required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface supporting simultaneous read/write operations without external transceivers |
| CS | Chip Select | Active-low enable controlling device activation and automatic entry into low-power standby mode |
| WE | Write Enable | Active-low signal initiating write cycle; combined with CS defines write window per JEDEC timing |
| OE | Output Enable | Active-low control for output drivers; allows shared bus operation with tri-state isolation |
| VCC | Power Supply | +5V supply pin with 4.5–5.5V operating range; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground reference; must be connected to low-impedance chassis ground in military designs |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh cycles needed - simplifies timing design and eliminates DRAM controller overhead |
| Military Qualification | MIL-STD-883 Class B compliance ensures tested performance under shock, vibration, and temperature cycling |
| Low-Power Standby | Automatic transition to ISB = 45mA max on CS high - enables power gating without firmware intervention |
| Alpha-Particle Immunity | CMOS process minimizes soft-error rate - critical for mission-critical avionics and guidance systems |
| TTL Compatibility | Direct interface with legacy 74-series logic - avoids level shifters and reduces BOM count in retrofitted systems |
Applications
| Avionics Flight Control Units | Tactical Radio Transceivers |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding calibrated lookup tables accessed at ≤25ns latency during servo loop execution. Use Value: Deterministic 25ns tAA ensures coefficient reads complete within tight 50µs control cycle deadlines without pipeline stalls. | Use Scenario: Buffering encrypted voice packets in handheld military radios operating across desert and arctic environments. IC Role / Device Role / Timing Role: High-reliability SRAM providing temporary packet staging before RF modulation, surviving –55°C cold soak and +125°C chassis heat. Use Value: SD24 ceramic DIP package maintains electrical integrity under thermal shock, eliminating solder joint fatigue failures in field-deployed units. |
| Missile Guidance Processors | Industrial Programmable Logic Controllers |
Use Scenario: Storing inertial navigation state vectors and Kalman filter residuals in guided munition seekers. IC Role / Device Role / Timing Role: Radiation-tolerant memory retaining critical trajectory data during launch acceleration and midcourse maneuvers. Use Value: CMOS process and MIL-STD-883 qualification suppress alpha-induced bit flips, ensuring navigation integrity during terminal phase. | Use Scenario: Caching ladder logic scan results and I/O image registers in oil-refinery DCS controllers exposed to EMI-rich motor drive zones. IC Role / Device Role / Timing Role: Electrically noise-immune SRAM interfacing directly with 5V PLC backplane buses without isolation buffers. Use Value: TTL-compatible VIH/VIL thresholds prevent false triggering from 200mV EMI spikes common near VFDs and contactors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116LA25TDB | Lower standby current (ISB1 = 0.9mA vs. 10mA), battery-retention capable (2V VDR), but same 25ns speed and SD24 package | Preferred for battery-backed systems requiring data retention during main power loss | Select 6116LA25TDB only if 2V data retention and sub-1mA standby are mandatory; otherwise 6116SA25TDB offers higher noise margin in noisy power environments |
| IS61C256AL-25MLI | 256K-bit (32K×8) density, 25ns speed, SOIC-28 package, commercial/industrial temp only (–40°C to +85°C) | Suitable for cost-sensitive industrial upgrades where board space permits SOIC and extended military temp is not required | Choose IS61C256AL-25MLI only for non-military applications needing higher density; incompatible with MIL-STD-883 qualification and SD24 footprint |
Compared with 6116LA25TDB and IS61C256AL-25MLI, the 6116SA25TDB uniquely balances military temperature range, hermetic SD24 packaging, and proven field reliability-making it irreplaceable in safety-critical platforms where qualification traceability and thermal survivability outweigh density or ultra-low-power trade-offs.
Availability
6116SA25TDB is available at Aetrix Electronics and suitable for avionics, defense electronics, and industrial control systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 6116SA25TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116SA/LA family was designed specifically for high-reliability embedded memory applications demanding MIL-STD-883 qualification, extended temperature operation, and TTL compatibility in legacy and upgrade programs.
FAQ
What is the maximum operating temperature range for the 6116SA25TDB?
The 6116SA25TDB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B, making it suitable for deployment in jet engine bays, missile canisters, and other extreme thermal environments where commercial or industrial grade SRAMs would fail.
Does the 6116SA25TDB require a refresh circuit or clock signal?
No, the 6116SA25TDB is a fully static RAM and requires no refresh cycles or clock signals. Its asynchronous architecture allows direct connection to microprocessor address/data buses without additional timing logic-reducing design complexity and board area in legacy 8-bit and 16-bit systems.
What package type does the 6116SA25TDB use, and is it lead-free?
The 6116SA25TDB uses a 24-pin ceramic DIP (SD24) package with 300-mil width. Per Renesas' 2020 rebranding and ordering documentation, this part is a green (lead-free) device compliant with RoHS Directive 2011/65/EU, with termination finish specified as matte tin.
Can the 6116SA25TDB be used as a direct replacement for older 6116 variants?
Yes, the 6116SA25TDB maintains pin-to-pin compatibility and identical AC/DC specifications with prior IDT-branded 6116SA25TDB units. Renesas retained all electrical, thermal, and mechanical characteristics during the rebranding, ensuring seamless drop-in replacement in existing military hardware.
What is the standby current consumption of the 6116SA25TDB when CS is high?
When CS is held HIGH, the 6116SA25TDB enters TTL-level standby mode with ISB ≤ 45mA (max) at VCC = 5.5V and TA = +125°C. For ultra-low-power scenarios, CMOS-level standby (ISB1 ≤ 10mA) is achieved when CS > VHC and input voltages are driven beyond valid logic thresholds.
6116SA25TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA25TDB FAQ
1.How can I place an order for 6116SA25TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA25TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA25TDB reliable?
The price and inventory of 6116SA25TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA25TDB is usually 5 days.
3.What payment methods are accepted for 6116SA25TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA25TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA25TDB?
6116SA25TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA25TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA25TDB?
For technical support, including 6116SA25TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA25TDB requirements.
6.How does Aetrix verify that 6116SA25TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA25TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA25TDB meets industry standards.
7.What is the process for return or replacement of 6116SA25TDB?
All 6116SA25TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA25TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA25TDB part is unused and in its original packaging.
Return procedure for 6116SA25TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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