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Renesas 6116SA35TDB
- Part No.:
- 6116SA35TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116SA35TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,434
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Product details
Overview
6116SA35TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 35ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, features static operation (no refresh required), and uses ceramic 24-pin DIP (SD24) packaging for harsh-environment embedded systems.
For engineers reviewing the 6116SA35TDB datasheet, 6116SA35TDB pinout, 6116SA35TDB application, or 6116SA35TDB equivalent, this page delivers verified timing specs, military temperature validation, standby current values, pin-level functional roles, and direct alternatives for legacy SRAM replacement in avionics, defense computing, and industrial control.
Technical Context
The 6116SA35TDB implements fully static asynchronous logic with no clocks or refresh cycles. Its address decoder drives a 128 × 128 memory array, and chip select (CS) controls automatic entry into TTL-level standby mode (ISB = 45mA max) or CMOS-level full standby (ISB1 = 10mA max) when CS is deasserted.
It supports two distinct read cycles (CS- or OE-controlled) and two write cycles (WE- or CS-controlled), with guaranteed AC parameters including tRC = 35ns, tAA = 35ns, tOE = 25ns, and tWHZ = 5ns - all validated over the full military temperature range (–55°C to +125°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 35ns max at VCC = 4.5–5.5V, –55°C to +125°C - defines minimum address-to-data valid delay |
| Read Cycle Time (tRC) | 35ns max - sets maximum sustainable random read rate (≈28.6 MHz) |
| Standby Current (ISB) | 45mA max (TTL-level CS high) - enables system-level power gating without external logic |
| Supply Voltage | 4.5V to 5.5V - compatible with standard 5V TTL/CMOS logic rails |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for mission-critical environments |
| Input Compatibility | TTL-compatible VIH ≥ 2.2V, VIL ≤ 0.8V - interoperable with legacy 5V microcontrollers and bus controllers |
Pinout & Package
6116SA35TDB is housed in a hermetically sealed ceramic 24-pin DIP (SD24, 300-mil width), optimized for thermal stability and long-term reliability in high-vibration, high-radiation, or extended-temperature applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K locations; latched on CS or WE transition |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit data path; high-impedance during standby or write disable to prevent bus contention |
| CS | Chip Select | Active-low enable; asserts memory access and controls TTL/CMOS standby entry |
| WE | Write Enable | Active-low write strobe; low during CS low initiates write cycle per timing waveforms |
| OE | Output Enable | Active-low output gate; separates read timing control from chip selection |
| VCC | Power Supply | +5V supply pin; decoupling required within 10mm for stable 35ns operation |
| GND | Ground Reference | Signal and power ground; must be low-inductance connection to support fast edge rates |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates DRAM-style refresh circuitry and timing overhead |
| MIL-STD-883 Class B compliance | Qualified for military applications including screening, burn-in, and radiation tolerance testing |
| Two standby modes | TTL-level (ISB = 45mA) and CMOS-level (ISB1 = 10mA) reduce power by >90% vs active operation |
| Alpha-particle soft-error immunity | Advanced CMOS process minimizes single-event upsets in aerospace and defense platforms |
| Direct TTL interfacing | Eliminates level-shifting components when interfacing with 5V microprocessors and FPGAs |
Applications
| Avionics Data Buffering | Tactical Radio Memory |
|---|---|
Use Scenario: Storing real-time telemetry packets and command buffers in airborne flight computers where power cycling and thermal shock are routine. IC Role / Device Role / Timing Role: Byte-accessible non-refresh SRAM acting as dual-port buffer between ADC subsystem and MIL-STD-1553B interface controller. Use Value: 35ns access ensures sub-microsecond response to interrupt-driven sensor reads under –55°C cold-soak conditions. | Use Scenario: Holding encrypted voice frames and protocol stack state in handheld tactical radios deployed in desert or arctic environments. IC Role / Device Role / Timing Role: Standby-optimized memory storing critical firmware segments and cryptographic keys during sleep mode. Use Value: ISB1 = 10mA at full military temp range extends battery life while maintaining instant wake-up capability. |
| Industrial PLC I/O Mapping | Missile Guidance System Cache |
Use Scenario: Mapping discrete I/O states and motion control registers in ruggedized programmable logic controllers operating near motors and welders. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for ladder logic execution engine with fixed-cycle scan timing. Use Value: Guaranteed tRC = 35ns across –40°C to +85°C industrial grade variants ensures jitter-free 1ms scan loop timing. | Use Scenario: Caching inertial measurement unit (IMU) calibration coefficients and guidance trajectory tables in guided munitions with tight SWaP-C constraints. IC Role / Device Role / Timing Role: Radiation-hardened-by-process SRAM preserving mission-critical data during launch vibration and re-entry thermal transients. Use Value: Ceramic SD24 package and MIL-STD-883 qualification ensure zero data loss after 100,000g shock exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA45TDB | Slower 45ns access time; identical pinout, package (SD24), voltage, and temperature range | Suitable where system timing budget allows relaxed read/write cycles | Select when 35ns margin is unnecessary and cost or inventory consolidation is prioritized |
| 6116LA35TDB | Same 35ns speed and SD24 package but LA variant: lower ISB1 = 0.9mA (vs 10mA) and 2V data retention capability | Preferred for battery-backed or ultra-low-power standby modes; not rated for same radiation hardness | Choose when data retention at 2V is required and MIL-STD-883 Class B is not mandatory |
Compared with 6116SA35TDB, 6116SA45TDB trades 10ns speed for broader availability and lower cost, while 6116LA35TDB retains speed but adds battery backup at the expense of full military qualification - enabling trade-offs between power, reliability, and environmental robustness.
Availability
6116SA35TDB is available at Aetrix Electronics and suitable for avionics data buffering, tactical radio memory, industrial PLC I/O mapping, and missile guidance system cache requiring stable component supply across extended temperature and lifecycle-critical programs.
Supply support for 6116SA35TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116SA/LA family was designed as a drop-in replacement for legacy 2K×8 SRAMs in military and industrial systems, emphasizing reliability, wide temperature operation, and compatibility with aging 5V bus architectures.
FAQ
What is the maximum operating temperature range for the 6116SA35TDB?
The 6116SA35TDB is qualified for operation from –55°C to +125°C per MIL-STD-883 Class B requirements. This full military temperature range is explicitly guaranteed in the datasheet's Recommended Operating Conditions table and validated across all AC/DC parameters, including access time and standby current. The 6116SA35TDB maintains 35ns tAA and 45mA ISB performance across this entire span.
Does the 6116SA35TDB require a refresh circuit?
No, the 6116SA35TDB is a fully static RAM and requires no refresh circuitry or external clock signals. Its CMOS design uses bistable latches for data storage, enabling indefinite data retention as long as power is applied and CS remains asserted. This eliminates timing-critical refresh overhead found in DRAMs and simplifies system design for deterministic real-time applications using the 6116SA35TDB.
What package type does the 6116SA35TDB use?
6116SA35TDB uses a ceramic 24-pin DIP package with 300-mil body width, designated SD24 in Renesas' ordering nomenclature. This hermetic ceramic DIP provides superior moisture resistance, thermal cycling endurance, and mechanical robustness compared to plastic DIP or SOIC variants - making it the preferred package for 6116SA35TDB in aerospace and defense deployments.
Is the 6116SA35TDB pin-compatible with other 6116-series variants?
Yes, the 6116SA35TDB shares identical pinout and footprint with all 6116SA/LA variants in SD24 (ceramic DIP) and CD24 (ceramic DIP) packages, including 6116SA20TDB, 6116SA25TDB, and 6116LA35TDB. Pin functions - A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND - are electrically and physically identical, enabling direct substitution where speed and power specifications align.
What is the standby current consumption of the 6116SA35TDB?
The 6116SA35TDB specifies two standby current modes: ISB = 45mA max under TTL-level standby (CS > VIH), and ISB1 = 10mA max under CMOS-level full standby (CS > VHC with inputs at valid logic levels). Both values are guaranteed across –55°C to +125°C and reflect actual measured device behavior - not typical-only figures - enabling accurate worst-case power budgeting for the 6116SA35TDB in battery-constrained or thermally limited systems.
6116SA35TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA35TDB FAQ
1.How can I place an order for 6116SA35TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA35TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA35TDB reliable?
The price and inventory of 6116SA35TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA35TDB is usually 5 days.
3.What payment methods are accepted for 6116SA35TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA35TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA35TDB?
6116SA35TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA35TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA35TDB?
For technical support, including 6116SA35TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA35TDB requirements.
6.How does Aetrix verify that 6116SA35TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA35TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA35TDB meets industry standards.
7.What is the process for return or replacement of 6116SA35TDB?
All 6116SA35TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA35TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA35TDB part is unused and in its original packaging.
Return procedure for 6116SA35TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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