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Renesas 6116SA45DB
- Part No.:
- 6116SA45DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA45DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,047
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Product details
Overview
The 6116SA45DB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 45ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50mA active current and ≤45mA standby current (TTL-level), and is packaged in a 24-pin 600mil ceramic DIP (CD24) for harsh-environment embedded systems.
For engineers reviewing the 6116SA45DB datasheet, 6116SA45DB pinout, 6116SA45DB application, or 6116SA45DB equivalent, this device serves as a drop-in replacement for legacy 2K×8 SRAMs in avionics data buffers, radar memory modules, and radiation-tolerant telemetry subsystems where guaranteed timing, low soft-error rate, and extended temperature operation are critical.
Technical Context
This device implements fully static asynchronous architecture-no clocks or refresh required-and uses advanced CMOS process to eliminate alpha-particle-induced soft errors. Its dual-mode standby (TTL- and CMOS-level) enables system-level power savings: ISB drops to 45mA at TTL-level CS HIGH, and further to 10mA under full CMOS-level standby (CS > VHC).
The 6116SA45DB supports three distinct read cycles (No. 1–3) and two write cycles (WE- and CS-controlled), with timing parameters fully characterized across military temperature range. All DC and AC specs-including VIH/VIL thresholds, output drive (±4mA/8mA), and tRC = 45ns-are guaranteed for –55°C to +125°C operation without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 45ns max at –55°C to +125°C - guarantees deterministic read latency in real-time control loops |
| Supply Voltage | 5.0V ±10% - compatible with standard TTL/CMOS logic rails without level-shifting |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for mission-critical defense platforms |
| Standby Current (ISB) | 45mA max (TTL-level CS HIGH) - enables low-power hold mode during processor sleep states |
| I/O Compatibility | TTL-input and TTL-output - directly interfaces with 74LS/74F logic and microcontrollers without buffers |
| Package | 24-pin 600mil ceramic DIP (CD24) - hermetically sealed, high-reliability packaging for long-life deployments |
Pinout & Package
Package: 24-pin 600mil ceramic dual in-line package (CD24), hermetically sealed, MIL-STD-883 Class B qualified.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K locations; TTL-compatible, no external pull-ups required |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS HIGH or OE HIGH during read, driven during write |
| CS | Chip Select | Active-low enable; forces device into standby (ISB ≤45mA) when HIGH, enabling system-level power gating |
| OE | Output Enable | Active-low control for output drivers; allows multiple devices on shared data bus without contention |
| WE | Write Enable | Active-low signal controlling write cycle initiation; supports both WE- and CS-controlled write timing modes |
| VCC | Power Supply | +5V ±10% supply input; decoupling capacitor required within 10mm for stable high-speed operation |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static operation eliminates DRAM-style refresh circuitry, reducing FPGA/CPU overhead and PCB complexity |
| MIL-STD-883 Class B compliance | Qualified for high-reliability military applications including vibration, thermal shock, and burn-in testing |
| Alpha-particle immunity | CMOS process minimizes soft-error rate (SER), critical for avionics and space-qualified telemetry memory |
| Dual standby modes | TTL-level (ISB ≤45mA) and CMOS-level (ISB ≤10mA) standby reduce power by >90% vs active mode |
| Guaranteed timing over full temp range | All AC parameters-including tRC, tAA, tOE-specified and tested from –55°C to +125°C, no derating needed |
Applications
| Avionics Data Buffering | Radar Signal Memory |
|---|---|
|
Use Scenario: Storing real-time sensor fusion outputs in flight control computers where deterministic latency and radiation tolerance are mandatory. IC Role / Device Role / Timing Role: Byte-wide static RAM providing zero-wait-state memory access for ARM Cortex-R or PowerPC-based safety-critical processors. Use Value: 45ns tAA ensures sub-50ns read response for closed-loop actuator commands; MIL-STD-883 qualification validates operation under aircraft vibration and thermal cycling. |
Use Scenario: Holding digitized IF samples in pulsed-Doppler radar front-ends requiring burst-mode memory with no refresh overhead. IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfacing directly with ADCs and FPGAs in airborne radar transceivers. Use Value: TTL-compatible I/O eliminates level-shifters; 600mil CDIP package withstands thermal shock during rapid altitude changes. |
| Telemetry Subsystem Memory | Secure Crypto Module Storage |
|
Use Scenario: Retaining encrypted payload telemetry frames during satellite orbital eclipse periods where power is constrained. IC Role / Device Role / Timing Role: Low-leakage static RAM operating in standby during battery-backed operation, preserving data integrity over extended dark periods. Use Value: ISB ≤45mA at TTL-level standby extends battery life; hermetic CD24 package prevents moisture ingress in LEO environments. |
Use Scenario: Storing ephemeral key material and intermediate cipher states in tamper-resistant HSMs deployed in ground station infrastructure. IC Role / Device Role / Timing Role: Secure, non-volatile-adjacent memory with fast random access for AES/GCM operations and side-channel resistant execution. Use Value: No refresh eliminates timing side channels; CMOS process reduces susceptibility to fault injection attacks targeting memory cells. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA45TDB | Same speed (45ns), same military temp range, but 24-pin 300mil ceramic DIP (SD24) package | Lower profile and smaller footprint; suitable for space-constrained PCBs with less board flex | Select 6116SA45TDB when mechanical envelope or board flex resistance is prioritized over hermetic seal robustness |
| 6116LA45DB | Same package (CD24) and speed (45ns), but LA variant offers lower standby current (ISB ≤40mA) and data retention at 2V | Enables true battery backup operation; not rated for full military temp range during retention | Choose 6116LA45DB only if 2V data retention is required and operation above +85°C during retention is not needed |
Compared with 6116SA45DB, 6116SA45TDB trades hermetic robustness for compactness, while 6116LA45DB sacrifices full military temperature support for ultra-low standby power-neither is pin-compatible drop-in replacements without layout or thermal validation.
Availability
The 6116SA45DB is available at Aetrix Electronics and suitable for avionics data buffering, radar signal memory, telemetry subsystem storage, and secure crypto module storage requiring stable component supply across extended temperature and long product lifecycles.
Supply support for 6116SA45DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 6116SA/LA family was designed specifically for high-reliability, extended-temperature memory applications in defense, aerospace, and industrial control systems where data integrity, timing predictability, and long-term availability are non-negotiable.
FAQ
What is the guaranteed access time for 6116SA45DB across its full operating temperature range?
The 6116SA45DB guarantees a maximum access time (tAA) of 45ns over the full military temperature range of –55°C to +125°C. This value is production-tested and specified in the AC Electrical Characteristics table under "All Temperature Ranges" with VCC = 5.0V ±10%. No derating is required for operation at temperature extremes.
Does the 6116SA45DB require a refresh clock or external timing circuitry?
No, the 6116SA45DB is a fully static RAM and requires no refresh clock or external timing signals. Its asynchronous design relies solely on address, CS, OE, and WE transitions-eliminating refresh controllers, timers, or associated PCB routing complexity. This simplifies integration with microcontrollers, FPGAs, and ASICs.
Is the 6116SA45DB pin-compatible with other members of the 6116SA/LA family?
Yes, all 6116SA/LA variants-including 6116SA45DB-share identical 24-pin CD24 pinout and signal assignments (A0–A10, I/O0–I/O7, CS, OE, WE, VCC, GND). However, electrical differences (e.g., ISB, ICC1, retention voltage) mean direct substitution requires verification of power budget and timing margins in the target system.
What package type does the 6116SA45DB use, and is it hermetically sealed?
The 6116SA45DB uses a 24-pin 600mil ceramic dual in-line package (CD24) and is hermetically sealed per MIL-STD-883 Class B requirements. This construction provides superior moisture resistance, thermal stability, and long-term reliability compared to plastic DIP or SOIC packages-critical for deployment in humid, high-vibration, or vacuum environments.
Can the 6116SA45DB operate with 3.3V logic levels?
No, the 6116SA45DB is specified only for 5.0V ±10% operation (4.5V–5.5V). Its VIH minimum is 2.2V and VIL maximum is 0.8V-compatible with TTL and 5V CMOS-but it lacks 3.3V I/O tolerance. Interfacing with 3.3V systems requires level translation, such as TI SN74AVC4T245 or discrete resistor dividers, to avoid violating absolute maximum ratings.
6116SA45DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA45DB FAQ
1.How can I place an order for 6116SA45DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA45DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA45DB reliable?
The price and inventory of 6116SA45DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA45DB is usually 5 days.
3.What payment methods are accepted for 6116SA45DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA45DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA45DB?
6116SA45DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA45DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA45DB?
For technical support, including 6116SA45DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA45DB requirements.
6.How does Aetrix verify that 6116SA45DB is sourced from the original manufacturer or authorized distributors?
All 6116SA45DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA45DB meets industry standards.
7.What is the process for return or replacement of 6116SA45DB?
All 6116SA45DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA45DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA45DB part is unused and in its original packaging.
Return procedure for 6116SA45DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA45DB Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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