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Renesas 6116SA45TDB
- Part No.:
- 6116SA45TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116SA45TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,932
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Product details
Overview
6116SA45TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 45ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50mA active current, and features automatic standby mode when CS is HIGH-enabling low-power system design in avionics and ruggedized control units.
For engineers reviewing the 6116SA45TDB datasheet, 6116SA45TDB pinout, 6116SA45TDB application, or 6116SA45TDB equivalent, key selection criteria include its ceramic DIP-24 package, 5V ±10% supply operation, guaranteed read/write timing at extended temperature, and compatibility with legacy 2K×8 SRAM-based memory subsystems requiring radiation-tolerant, no-refresh operation.
Technical Context
This device implements fully static asynchronous logic-no clocks or refresh cycles required-using advanced CMOS technology that eliminates alpha-particle soft-error susceptibility. Its address decoding, I/O control, and power management circuits are integrated into a single 128×128 memory array architecture with TTL-level input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive capability (IOH = –4mA, IOL = 8mA).
Timing behavior is defined by three critical cycles: read cycle time (tRC = 45ns), chip select access time (tACS = 45ns), and write cycle time (tWC = 45ns), all guaranteed over the full military temperature range. Standby current drops to 45mA (TTL-level CS) or 10mA (CMOS-level CS), enabling significant power savings during idle states without data loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 45ns max at –55°C to +125°C - defines minimum address-to-data valid delay |
| Supply Voltage | 5.0V ±10% - compatible with standard TTL/CMOS logic rails |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for harsh environments |
| Standby Current (ISB) | 45mA max (TTL-level CS) - enables low-power hold mode without external circuitry |
| Package | Ceramic 24-pin DIP (SD24) - hermetically sealed, high-reliability board mounting |
| I/O Compatibility | TTL-input and TTL-output - direct interfacing with 74LS/ALS logic families |
Pinout & Package
6116SA45TDB is supplied in a 24-pin ceramic dual in-line package (CDIP), designated SD24 per Renesas ordering nomenclature. The package is hermetically sealed, RoHS-compliant, and rated for >10-year operational life under thermal cycling stress.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path supporting read and write operations |
| CS | Chip Select | Active-low enable; forces device into standby mode when HIGH |
| WE | Write Enable | Active-low control for write cycles; must be LOW with CS LOW to store data |
| OE | Output Enable | Active-low control for read cycles; gates output drivers only during reads |
| VCC | Power Supply | +5V ±10% main supply rail; powers core logic and I/O buffers |
| GND | Ground Reference | 0V return path for all internal circuits and I/O signals |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates DRAM-style refresh circuitry and timing overhead |
| Military qualification | MIL-STD-883 Class B compliance ensures performance and reliability in defense/aerospace systems |
| Low-alpha CMOS process | Eliminates soft errors caused by cosmic radiation-critical for high-altitude or space-adjacent applications |
| Automatic standby mode | Hardware-enforced power reduction when CS is deasserted; no software or external logic needed |
| TTL-compatible signaling | Direct interface with legacy 74-series logic without level-shifting components |
Applications
| Avionics Flight Control Memory | Tactical Radios |
|---|---|
Use Scenario: Storing real-time sensor fusion data and flight control coefficients in F-16 digital flight control computers. IC Role / Device Role / Timing Role: Non-volatile cache for mission-critical lookup tables; accessed synchronously with FPGA-based control loops. Use Value: 45ns access time ensures deterministic response within 500ns control loop deadlines; ceramic DIP package withstands vibration and thermal shock. | Use Scenario: Holding encryption keys and protocol state in handheld SINCGARS radios operating in desert environments. IC Role / Device Role / Timing Role: Secure, tamper-resistant SRAM buffer for cryptographic engine; powered continuously during mission duration. Use Value: –55°C to +125°C rating supports operation inside sealed enclosures under direct sun exposure; MIL-STD-883 screening guarantees long-term data retention. |
| Artillery Fire Control Systems | Ruggedized Industrial PLCs |
Use Scenario: Buffering ballistic solution parameters and gun elevation commands in M109A7 self-propelled howitzer fire control units. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for real-time trajectory computation; co-located with TI C6000 DSP. Use Value: Ceramic DIP-24 package resists mechanical shock from artillery recoil; 45ns tRC enables tight coupling with DSP memory bus. | Use Scenario: Storing configuration registers and I/O mapping tables in Schneider Electric Modicon M580 controllers deployed in oil refinery control rooms. IC Role / Device Role / Timing Role: Static RAM for nonvolatile parameter storage during brownout events; retains data via backup battery (not applicable to SA variant). Use Value: TTL compatibility simplifies integration with legacy 80C188-based controller buses; MIL-grade reliability reduces field failure rates in 24/7 operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116LA45TDB | Same speed (45ns), same package (SD24), but LA version offers 2V data retention and lower standby current (≤40mA vs. 45mA) | Required where battery-backed data retention is needed during main power loss | Select LA variant only if 2V retention capability is mandatory; SA variant has higher noise immunity due to tighter VIH/VIL margins |
| IS61LV25616AL-10TLI | 3.3V-only, 10ns access, 256K×16 organization, TQFP-44 package - not pin-compatible | Used in modern low-voltage embedded systems with wider data buses and faster timing budgets | Not a drop-in replacement; requires PCB redesign and voltage translation; choose only for new designs targeting higher density and lower power |
Compared with 6116LA45TDB, the 6116SA45TDB trades battery retention for improved DC noise margin and simplified power architecture; compared with IS61LV25616AL-10TLI, it provides proven military qualification and direct TTL interoperability at the cost of speed and density-making it optimal for legacy-replacement and high-reliability retrofit programs.
Availability
6116SA45TDB is available at Aetrix Electronics and suitable for avionics, tactical communications, artillery fire control, and ruggedized industrial PLCs requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 6116SA45TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The 6116SA/LA family was designed specifically for high-reliability, no-refresh memory applications in military and aerospace systems where radiation tolerance, extended temperature operation, and long-term data integrity are non-negotiable.
FAQ
What is the maximum operating temperature range for the 6116SA45TDB?
The 6116SA45TDB is rated for operation from –55°C to +125°C and is fully qualified to MIL-STD-883 Class B. This specification is guaranteed across all electrical parameters including access time, standby current, and I/O voltage levels-making it suitable for deployment in jet engine bays, missile guidance sections, and other extreme thermal environments where commercial or industrial grade SRAMs would fail.
Does the 6116SA45TDB require a refresh clock or external timing circuitry?
No, the 6116SA45TDB is a fully static RAM and requires no refresh clock or external timing circuitry. Its internal CMOS latches retain data indefinitely as long as VCC is applied and CS remains asserted. This eliminates refresh overhead, simplifies system design, and removes timing uncertainty associated with dynamic RAM architectures-critical for deterministic real-time systems using the 6116SA45TDB.
Is the 6116SA45TDB pin-compatible with other 2K×8 SRAMs like the HM6116 or CY6116?
Yes, the 6116SA45TDB uses the industry-standard 24-pin DIP pinout for 2K×8 SRAMs, matching HM6116, CY6116, and other JEDEC-compliant devices. Address lines A0–A10, data I/O0–I/O7, control signals CS/OE/WE, and power pins VCC/GND occupy identical positions-enabling direct replacement in legacy designs without PCB modification, provided timing and voltage requirements are met.
What is the guaranteed access time for the 6116SA45TDB at full military temperature range?
The 6116SA45TDB guarantees a maximum access time (tAA) of 45ns across its entire operating temperature range of –55°C to +125°C. This value is production-tested and specified in the AC Electrical Characteristics table under "Military" grade conditions, ensuring predictable timing behavior in mission-critical applications where thermal derating cannot be tolerated.
Can the 6116SA45TDB be used with 3.3V logic systems?
No, the 6116SA45TDB is a 5V-only device requiring VCC = 5.0V ±10%. Its input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive levels (VOH ≥ 2.4V, VOL ≤ 0.4V) are specified for 5V TTL compatibility. Interfacing with 3.3V systems requires level-shifting circuitry; for native 3.3V operation, consider Renesas' IS61LV series instead of the 6116SA45TDB.
6116SA45TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA45TDB FAQ
1.How can I place an order for 6116SA45TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA45TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA45TDB reliable?
The price and inventory of 6116SA45TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA45TDB is usually 5 days.
3.What payment methods are accepted for 6116SA45TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA45TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA45TDB?
6116SA45TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA45TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA45TDB?
For technical support, including 6116SA45TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA45TDB requirements.
6.How does Aetrix verify that 6116SA45TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA45TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA45TDB meets industry standards.
7.What is the process for return or replacement of 6116SA45TDB?
All 6116SA45TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA45TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA45TDB part is unused and in its original packaging.
Return procedure for 6116SA45TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA45TDB Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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