My Inquiry
My Account
Renesas 6116SA55DB
- Part No.:
- 6116SA55DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA55DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,521
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
The 6116SA55DB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 55 ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50 mA active current and ≤45 mA standby current (TTL-level), and is housed in a 24-pin 600 mil ceramic DIP (CD24) package. It serves as non-volatile data buffer in avionics control modules requiring deterministic timing and radiation-tolerant memory.
For engineers reviewing the 6116SA55DB datasheet, 6116SA55DB pinout, 6116SA55DB application, or 6116SA55DB equivalent, key selection criteria include guaranteed 55 ns read cycle time under military temperature extremes, CMOS-level standby current of 10 mA, TTL-compatible voltage thresholds (VIH = 2.2 V min, VIL = 0.8 V max), and ceramic DIP packaging for hermetic reliability in harsh environments.
Technical Context
This device implements fully static asynchronous architecture-no clocks or refresh required-with independent chip select (CS), output enable (OE), and write enable (WE) controls enabling flexible bus interfacing. Its address decoder drives a 128 × 128 memory array, supporting single-cycle read/write operations with tRC = 55 ns and tWC = 55 ns.
Power management includes dual standby modes: TTL-level (ISB = 45 mA max) and CMOS-level (ISB1 = 10 mA max), activated by CS > VIH. The SA variant lacks battery backup; data retention requires continuous VCC ≥ 4.5 V, distinguishing it from LA-series parts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 55 ns max at VCC = 5.0 V ±10%, TA = –55°C to +125°C |
| Read Cycle Time (tRC) | 55 ns max, defines minimum interval between successive reads |
| Supply Voltage | 4.5 V to 5.5 V - compatible with legacy 5 V TTL/CMOS systems |
| Operating Current (ICC1) | 130 mA max - determines system power budget during active read/write |
| Standby Current (ISB) | 45 mA max (TTL-level CS), enables low-power hold mode without external circuitry |
| Input Compatibility | TTL-level: VIH ≥ 2.2 V, VIL ≤ 0.8 V - direct connection to 74LS/ALS logic |
Pinout & Package
Package: 24-pin 600 mil ceramic dual in-line package (CD24), hermetically sealed, MIL-STD-883 Class B qualified.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS or OE inactive |
| CS | Chip Select | Active-low enable; forces standby mode when HIGH |
| OE | Output Enable | Active-low control for read data output; does not affect write path |
| WE | Write Enable | Active-low signal qualifying write cycles; overlaps with CS LOW |
| VCC | Power Supply | +5 V supply pin; must be decoupled locally per MIL-STD-883 requirements |
| GND | Ground Reference | Signal and power ground; separate grounding recommended for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh - simplifies timing design and eliminates dynamic power spikes |
| MIL-STD-883 Class B compliance | Qualified for military temperature range (–55°C to +125°C) and mechanical shock/vibration |
| TTL-compatible I/O | Direct interface with legacy 74LS/ALS families without level-shifting circuitry |
| Dual standby power modes | Reduces system power by >95% vs active mode; CMOS-level ISB1 = 10 mA enables ultra-low-hold states |
| Ceramic DIP packaging | Hermetic seal prevents moisture ingress and ensures long-term reliability in aerospace deployments |
Applications
| Avionics Flight Control Unit | Tactical Radio Baseband Processor |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in fly-by-wire systems. IC Role / Device Role / Timing Role: High-reliability scratchpad memory holding critical control parameters with deterministic 55 ns access. Use Value: Enables sub-millisecond response to air data inputs while meeting DO-254 DAL A hardware assurance requirements via MIL-qualified packaging. | Use Scenario: Buffering encrypted voice frames between RF front-end and DSP core in manpack radios. IC Role / Device Role / Timing Role: Low-latency, byte-accessible memory supporting burst-mode packet assembly under wide temperature swings. Use Value: Guarantees 55 ns read/write timing across –55°C to +125°C, eliminating thermal derating margins in field-deployed units. |
| Missile Guidance Inertial Measurement Unit | Naval Radar Signal Preprocessor |
Use Scenario: Storing gyroscope bias calibration tables and real-time angular rate buffers in guidance computers. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM providing error-free data retention during launch vibration and high-G maneuvers. Use Value: CMOS process eliminates alpha-particle soft errors; ceramic DIP withstands 20 g RMS vibration per MIL-STD-810. | Use Scenario: Temporary storage of digitized radar returns prior to FFT processing in shipboard surveillance systems. IC Role / Device Role / Timing Role: High-density memory node interfacing with 8-bit parallel ADCs and FPGA-based correlators. Use Value: 24-pin CDIP footprint allows dense board layout in space-constrained radar cabinets while maintaining EMI shielding integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA55TDB | Same speed grade (55 ns), same military temp range, but uses 24-pin 300 mil ceramic DIP (SD24) instead of 600 mil CD24 | SD24 has smaller footprint and lower thermal mass; less suitable for high-power dissipation scenarios | Select 6116SA55TDB only if PCB layout constraints require compact ceramic DIP or thermal profile permits reduced package size |
| 6116LA55DB | Same package (CD24) and speed (55 ns), but LA variant adds 2 V data retention and 0.1–0.9 mA CMOS standby current | LA supports battery-backed hold mode; SA requires continuous VCC ≥ 4.5 V for data retention | Choose 6116LA55DB when system-level battery backup is implemented; otherwise 6116SA55DB offers lower cost and simpler power design |
Compared with 6116SA55TDB, the 6116SA55DB provides higher thermal mass and mechanical robustness in the 600 mil CD24 package; compared with 6116LA55DB, it eliminates battery interface complexity and reduces standby power control overhead at the cost of non-volatile retention capability.
Availability
The 6116SA55DB is available at Aetrix Electronics and suitable for avionics flight control units, tactical radio baseband processors, missile guidance inertial measurement units, and naval radar signal preprocessors requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 6116SA55DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT6116SA/LA family was developed by Integrated Device Technology (acquired by Renesas in 2019) specifically for high-reliability, military-grade static RAM applications demanding deterministic timing, radiation tolerance, and hermetic packaging.
FAQ
What is the operating temperature range specified for the 6116SA55DB?
The 6116SA55DB is rated for –55°C to +125°C, meeting MIL-STD-883 Class B environmental qualification. This full military temperature range is confirmed in the Absolute Maximum Ratings table and supported by AC/DC electrical characteristics tested across that span. No derating is required within this range, and the 55 ns access time is guaranteed at both extremes.
Does the 6116SA55DB support battery backup operation?
No, the 6116SA55DB does not support battery backup. Only the LA variant (e.g., 6116LA55DB) provides 2 V data retention capability. The SA version requires continuous VCC ≥ 4.5 V to maintain data integrity; applying 2 V to VCC will not retain memory contents and may violate absolute maximum ratings.
What package type is used for the 6116SA55DB?
The 6116SA55DB uses a 24-pin 600 mil ceramic dual in-line package (CD24), as explicitly listed in the Orderable Part Information table. This hermetically sealed ceramic DIP meets MIL-STD-883 mechanical and environmental test requirements and differs from the 300 mil SD24 variant used in 6116SA55TDB.
Is the 6116SA55DB pin-compatible with other 6116 variants?
Yes, all 6116SA/LA variants-including 6116SA55DB-share identical 24-pin pinout and function mapping per the Pin Description table. Address (A0–A10), data (I/O0–I/O7), and control (CS, OE, WE, VCC, GND) assignments are consistent across SA/LA, speed grades, and CD24/SD24/PSG24 packages.
What is the maximum allowable supply voltage for the 6116SA55DB?
The absolute maximum supply voltage (VTERM) for the 6116SA55DB is +7.0 V, but the recommended operating range is 4.5 V to 5.5 V (VCC = 5.0 V ±10%). Exceeding 5.5 V risks violating DC electrical specifications and may accelerate parametric drift over temperature and lifetime, especially under military-grade stress conditions.
6116SA55DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA55DB FAQ
1.How can I place an order for 6116SA55DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA55DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA55DB reliable?
The price and inventory of 6116SA55DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA55DB is usually 5 days.
3.What payment methods are accepted for 6116SA55DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA55DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA55DB?
6116SA55DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA55DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA55DB?
For technical support, including 6116SA55DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA55DB requirements.
6.How does Aetrix verify that 6116SA55DB is sourced from the original manufacturer or authorized distributors?
All 6116SA55DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA55DB meets industry standards.
7.What is the process for return or replacement of 6116SA55DB?
All 6116SA55DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA55DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA55DB part is unused and in its original packaging.
Return procedure for 6116SA55DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA55DB Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
