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Renesas 6116SA55TDB
- Part No.:
- 6116SA55TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA55TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,613
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Product details
Overview
6116SA55TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 55 ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50 mA active current and ≤45 mA standby current (TTL-level), and uses a 24-pin ceramic DIP (SD24) package for harsh-environment embedded control and avionics data buffering.
For engineers reviewing the 6116SA55TDB datasheet, 6116SA55TDB pinout, 6116SA55TDB application, or 6116SA55TDB equivalent, key selection criteria include guaranteed 55 ns read cycle time under military temperature extremes, zero-refresh static operation, chip-select–driven standby mode, and direct compatibility with legacy 5 V TTL bus systems in aerospace and defense subsystems.
Technical Context
The 6116SA55TDB implements fully static asynchronous logic with no clocks or refresh required. Its address decoder drives a 128 × 128 memory array, and control circuitry enforces strict timing on CS, WE, and OE to ensure deterministic read/write behavior across full military temperature range.
It supports two distinct power modes: active operation with CS < VIL and standby with CS > VIH (TTL-level) or CS > VHC (CMOS-level), enabling system-level power savings. Input leakage is ≤5 µA (commercial/industrial) or ≤10 µA (military), and output drivers meet TTL VOH ≥2.4 V and VOL ≤0.4 V at specified loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 55 ns max - guarantees worst-case read latency in real-time control loops |
| Supply Voltage | 5.0 V ±10% - compatible with standard 5 V TTL logic rails without regulation |
| Operating Temperature | –55°C to +125°C - qualified for airborne, missile, and space-qualified electronics |
| Standby Current (ISB) | 45 mA max (TTL-level CS) - enables low-power hold during processor sleep states |
| Package | 24-pin ceramic DIP (SD24, 300 mil) - hermetic sealing for moisture resistance and long-term reliability |
| Compliance | MIL-STD-883 Class B - meets military screening, testing, and traceability requirements |
Pinout & Package
6116SA55TDB is housed in a 24-pin ceramic dual in-line package (CDIP), SD24 variant (300 mil width), with gull-wing leads and hermetic ceramic body suitable for high-reliability applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selects one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS HIGH or OE HIGH |
| CS | Chip Select | Active-low enable; forces standby mode when HIGH, enabling system-level power gating |
| WE | Write Enable | Active-low control; initiates write cycle when CS and WE both LOW |
| OE | Output Enable | Active-low control; enables output drivers only during read cycles |
| VCC | Power Supply | +5 V supply input; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection in PCB layout |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh cycles required - eliminates timing-critical refresh overhead in real-time firmware |
| TTL-Compatible I/O | Direct interface with legacy 5 V TTL microcontrollers and FPGAs without level-shifting |
| Military Screening | MIL-STD-883 Class B qualification ensures radiation tolerance, thermal cycling endurance, and lot traceability |
| Low Alpha-Rate CMOS | Advanced fabrication minimizes soft errors from cosmic rays - critical for avionics and satellite memory |
| Hermetic Ceramic Package | SD24 ceramic DIP prevents moisture ingress and provides mechanical stability in vibration-prone environments |
Applications
| Avionics Flight Control Memory | Military Radar Signal Buffering |
|---|---|
Use Scenario: Storing real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs operating at –55°C to +125°C. IC Role / Device Role / Timing Role: Non-volatile data buffer holding mission-critical lookup tables accessed within 55 ns by safety-critical DSPs. Use Value: Eliminates external refresh circuitry and guarantees deterministic latency under extreme thermal shock. | Use Scenario: Capturing intermediate pulse-Doppler processing results in airborne radar front-ends where EMI and temperature swings exceed commercial limits. IC Role / Device Role / Timing Role: High-reliability scratchpad RAM interfacing directly with 5 V TTL ADC/DAC controllers and FPGA datapaths. Use Value: Hermetic SD24 packaging and MIL-STD-883 screening ensure uninterrupted operation during sustained high-G maneuvers. |
| Spacecraft Onboard Telemetry Storage | Hardened Industrial PLC Data Log |
Use Scenario: Temporarily storing housekeeping telemetry packets before downlink transmission in LEO satellites exposed to total ionizing dose. IC Role / Device Role / Timing Role: Radiation-tolerant static RAM providing error-free storage without periodic scrubbing or ECC overhead. Use Value: Low alpha-particle soft-error rate enables extended mission life without memory corruption events. | Use Scenario: Logging process alarms and sensor history in oil & gas refinery PLCs operating continuously at –40°C ambient with 5 V backplane voltage. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for legacy 6116 designs requiring extended temperature support and MIL-qualified traceability. Use Value: Direct substitution avoids PCB redesign while meeting industrial lifecycle and audit requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA70TDB | Slower 70 ns access time; identical SD24 package and military temp range | Suitable for less timing-critical subsystems where 15 ns margin is acceptable | Select when system timing budget allows relaxed tAA and lower cost is prioritized |
| 6116LA55TDB | Same 55 ns speed but LA version offers 0.1–0.9 mA full-standby current vs. 45 mA (TTL-level) for 6116SA55TDB | Preferred for battery-backed or ultra-low-power hold modes; requires CMOS-level CS threshold | Choose when system design includes CMOS-compatible control logic and demands sub-mA retention current |
Compared with 6116SA55TDB, 6116SA70TDB trades 15 ns performance for cost reduction in non-critical paths, while 6116LA55TDB delivers identical speed with orders-of-magnitude lower standby current-enabling true battery backup operation without sacrificing access time.
Availability
6116SA55TDB is available at Aetrix Electronics and suitable for avionics, military radar, spacecraft telemetry, and hardened industrial PLCs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 6116SA55TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT6116SA/LA family was developed by Integrated Device Technology (acquired by Renesas in 2019) to provide radiation-hardened, military-qualified static RAMs for mission-critical systems demanding zero-refresh operation and hermetic reliability.
FAQ
What is the maximum operating temperature range for the 6116SA55TDB?
The 6116SA55TDB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B environmental stress testing, making it suitable for deployment in jet engine bays, missile guidance sections, and other extreme thermal environments where commercial or industrial grade parts would fail.
Does the 6116SA55TDB require a clock or refresh signal to retain data?
No, the 6116SA55TDB is a fully static RAM and requires no clock or periodic refresh. Data remains valid as long as VCC is maintained within 4.5 V to 5.5 V and temperature stays within specification. This eliminates timing-critical refresh overhead in safety-certified firmware.
What package type is used for the 6116SA55TDB?
The 6116SA55TDB uses a 24-pin ceramic dual in-line package (CDIP) with SD24 code - a 300 mil width hermetic ceramic body with gull-wing leads, designed for high-reliability applications requiring moisture resistance and mechanical robustness.
How does the standby power mode work on the 6116SA55TDB?
When CS is driven HIGH (≥2.0 V), the 6116SA55TDB automatically enters TTL-level standby mode, reducing ICC to ≤45 mA. If CS exceeds VHC (VCC − 0.2 V), it enters full CMOS standby with ISB1 ≤10 mA - enabling flexible power management based on system control logic thresholds.
Is the 6116SA55TDB pin-compatible with other 6116 variants like the 6116LA55TDB?
Yes, the 6116SA55TDB and 6116LA55TDB share identical pinout, package (SD24), and functional interface. However, the LA version requires CMOS-level CS threshold for ultra-low standby current, whereas the SA version uses TTL-level CS for broader compatibility with legacy 5 V logic families.
6116SA55TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA55TDB FAQ
1.How can I place an order for 6116SA55TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA55TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA55TDB reliable?
The price and inventory of 6116SA55TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA55TDB is usually 5 days.
3.What payment methods are accepted for 6116SA55TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA55TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA55TDB?
6116SA55TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA55TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA55TDB?
For technical support, including 6116SA55TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA55TDB requirements.
6.How does Aetrix verify that 6116SA55TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA55TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA55TDB meets industry standards.
7.What is the process for return or replacement of 6116SA55TDB?
All 6116SA55TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA55TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA55TDB part is unused and in its original packaging.
Return procedure for 6116SA55TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA55TDB Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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