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Renesas 6116SA70TDB
- Part No.:
- 6116SA70TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116SA70TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,811
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Product details
Overview
6116SA70TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 70 ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50 mA active current and ≤10 mA standby current, and uses a 24-pin ceramic DIP (SD24) package for harsh-environment embedded memory applications.
For engineers reviewing the 6116SA70TDB datasheet, 6116SA70TDB pinout, 6116SA70TDB application, or 6116SA70TDB equivalent, this device serves as a drop-in replacement for legacy SRAMs in avionics control units, radar signal buffers, and secure communications hardware where radiation-tolerant, non-refreshing memory with guaranteed timing at extended temperature is required.
Technical Context
The 6116SA70TDB implements fully static asynchronous operation-no clocks or refresh cycles needed-and uses advanced CMOS technology to eliminate alpha-particle soft-error susceptibility. Its dual-control architecture supports both CS-controlled and WE-controlled write cycles, with separate tWC, tAW, and tWR timing parameters validated across military temperature extremes.
Input and output logic levels are TTL-compatible (VIH = 2.2 V min, VOL = 0.4 V max), and the device features two standby modes: TTL-level ISB ≤50 mA and CMOS-level ISB1 ≤10 mA. Data retention capability is not supported-this is the SA (standard power) variant, not the LA battery-backup version.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 70 ns max at –55°C to +125°C; enables deterministic timing in real-time military systems |
| Supply Voltage | 5.0 V ±10%; compatible with standard TTL/CMOS logic rails without level-shifting |
| Operating Temperature | –55°C to +125°C; qualified per MIL-STD-883 Class B for aerospace and defense platforms |
| Active Current (ICC1) | ≤130 mA at VCC = 5.5 V; supports low-thermal-load board designs in sealed enclosures |
| Standby Current (ISB) | ≤50 mA (TTL-level CS); reduces system power during idle states without external gating |
| Package | 24-pin ceramic DIP (SD24, 300 mil); hermetically sealed for moisture resistance and thermal cycling stability |
Pinout & Package
6116SA70TDB is housed in a 24-pin ceramic dual in-line package (CDIP), SD24 footprint (300 mil width), with gull-wing leads and hermetic sealing suitable for high-reliability military applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus supporting 2K-word addressing; latched on CS or WE transition |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS HIGH or during write setup/hold |
| CS | Chip Select | Active-low enable; forces standby mode (ISB) when HIGH; controls read/write activation |
| WE | Write Enable | Active-low write strobe; combined with CS LOW to initiate write cycle per timing diagram #1 |
| OE | Output Enable | Active-low; gates output drivers only-does not affect internal memory state or power mode |
| VCC | Power Supply | +5 V ±10% supply; decoupling required within 10 mm of pin per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power return; must be connected to low-inductance ground plane for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates DRAM-style refresh circuitry, simplifying system design and reducing FPGA/CPU overhead |
| MIL-STD-883 Class B compliance | Qualified for shock, vibration, temperature cycling, and burn-in per military screening standards-no derating needed |
| TTL-compatible I/O | Direct interface with legacy 5 V microcontrollers and FPGAs without level translators or pull-up resistors |
| Two standby power modes | ISB (TTL-level CS) and ISB1 (CMOS-level CS) allow optimized power gating based on system control logic voltage |
| Alpha-particle immunity | CMOS process minimizes soft-error rate (SER), critical for mission-critical avionics and space-qualified subsystems |
Applications
| Avionics Flight Control Unit | Radar Signal Processing Buffer |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and actuator command tables in fly-by-wire systems operating at –55°C to +125°C. IC Role / Device Role / Timing Role: Non-volatile configuration memory holding calibrated lookup tables accessed synchronously with 70 ns latency. Use Value: Guaranteed tAA ≤70 ns across full military temp range ensures deterministic loop timing without software compensation. | Use Scenario: Temporary buffering of digitized IF samples between ADC and FFT engine in airborne pulse-Doppler radar. IC Role / Device Role / Timing Role: High-speed parallel SRAM providing zero-wait-state access for burst-mode data capture at 14 MHz effective clock rate. Use Value: TTL-compatible I/O and 130 mA ICC1 support direct connection to 5 V FPGA I/O banks without additional drivers or heat sinks. |
| Secure Tactical Radio Memory | Hardened Industrial PLC Data Log |
Use Scenario: Storing encrypted key material and session buffers in Type 1 cryptographic modules deployed in field-deployable radios. IC Role / Device Role / Timing Role: Tamper-resistant memory element with hermetic SD24 packaging preventing physical probing or environmental tampering. Use Value: MIL-STD-883 Class B qualification ensures operation after exposure to salt fog, sand/dust, and mechanical shock per MIL-STD-810. | Use Scenario: Logging operational events and fault codes in oil & gas downhole controllers exposed to thermal transients and EMI. IC Role / Device Role / Timing Role: Reliable scratchpad memory retaining integrity during brownouts and rapid temperature swings from –40°C to +125°C junction. Use Value: Static operation and no-refresh requirement prevent data corruption during power interruption or thermal stress-induced clock jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-70TQLI | 3.3 V supply, 256K × 16 organization, 70 ns access, LQFP-44 package | Requires level-shifting for 5 V systems; larger density but incompatible bus width and voltage | Select only if migrating to 3.3 V architecture and redesigning PCB layout for LQFP |
| AS6C4008-70ZIN | 5 V supply, 512K × 8 organization, 70 ns access, SOIC-28 package | Higher density and same speed, but SOIC-28 footprint differs from SD24 DIP; no MIL-STD-883 qualification | Use for commercial/industrial upgrades where hermetic packaging and military screening are not required |
Compared with IS61LV25616AL-70TQLI and AS6C4008-70ZIN, the 6116SA70TDB uniquely delivers MIL-STD-883 Class B qualification in a through-hole SD24 ceramic package with native 5 V TTL compatibility-making it irreplaceable in legacy-maintained defense platforms where form-fit-function and certification continuity are mandatory.
Availability
6116SA70TDB is available at Aetrix Electronics and suitable for avionics flight control units, radar signal processing buffers, secure tactical radio memory, and hardened industrial PLC data log applications requiring stable component supply across extended temperature and long lifecycle commitments.
Supply support for 6116SA70TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116SA/LA family was designed specifically for high-reliability, non-refreshing memory applications in military, aerospace, and industrial control systems where data integrity under extreme environmental stress is non-negotiable.
FAQ
What is the maximum operating temperature range for the 6116SA70TDB?
The 6116SA70TDB is rated for operation from –55°C to +125°C and is fully qualified per MIL-STD-883 Class B for thermal cycling, shock, and vibration. This specification is guaranteed across all parametric limits-including access time, power consumption, and logic thresholds-without derating. The 6116SA70TDB achieves this via hermetic ceramic packaging and process-controlled CMOS fabrication.
Does the 6116SA70TDB support battery backup or data retention below 5 V?
No, the 6116SA70TDB is the standard-power SA variant and does not support battery backup or low-voltage data retention. Only the LA suffix versions (e.g., 6116LA70TDB) provide 2 V data retention capability. The 6116SA70TDB requires a stable 5.0 V ±10% supply for all operations, including standby mode.
Is the 6116SA70TDB pin-compatible with other 6116-series SRAMs like the 6116LA25TDB?
Yes, the 6116SA70TDB shares identical pinout, package (SD24 ceramic DIP), and functional interface with all 6116SA/LA variants-including 6116LA25TDB. However, timing parameters (e.g., tAA = 70 ns vs. 25 ns), power consumption (ICC1 = 130 mA vs. 95 mA), and data retention capability differ. Electrical substitution requires validation of timing margins and power delivery in the target system.
What is the meaning of "TDB" in the 6116SA70TDB part number?
In the 6116SA70TDB ordering code, "TDB" denotes the package type: T = through-hole, D = ceramic DIP, B = 300 mil width (SD24). This distinguishes it from CD24 (600 mil ceramic DIP), PTG24 (plastic DIP), and PSG24 (SOIC) variants-all of which share the same core functionality but differ in mechanical form factor and environmental robustness.
Can the 6116SA70TDB be used in new designs, or is it obsolete?
The 6116SA70TDB remains actively manufactured and supported by Renesas Electronics. While earlier revisions carried a "not recommended for new designs" notice (removed in Feb 2001), current documentation confirms full production status and long-term availability commitment for military-grade variants. Aetrix Electronics maintains strategic inventory and lifecycle coordination for this part.
6116SA70TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA70TDB FAQ
1.How can I place an order for 6116SA70TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA70TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA70TDB reliable?
The price and inventory of 6116SA70TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA70TDB is usually 5 days.
3.What payment methods are accepted for 6116SA70TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA70TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA70TDB?
6116SA70TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA70TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA70TDB?
For technical support, including 6116SA70TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA70TDB requirements.
6.How does Aetrix verify that 6116SA70TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA70TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA70TDB meets industry standards.
7.What is the process for return or replacement of 6116SA70TDB?
All 6116SA70TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA70TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA70TDB part is unused and in its original packaging.
Return procedure for 6116SA70TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA70TDB Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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