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Renesas 6116SA90DB
- Part No.:
- 6116SA90DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.600", 15.24mm)
- Datasheet:
-
6116SA90DB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,491
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Product details
Overview
The 6116SA90DB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 90ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤50mA active current and ≤45mA standby current (TTL level), and is packaged in a 24-pin 600mil ceramic DIP (CD24) for harsh-environment avionics and defense systems.
For engineers reviewing the 6116SA90DB datasheet, 6116SA90DB pinout, 6116SA90DB application, or 6116SA90DB equivalent, this page delivers verified timing parameters, military temperature validation, DC/AC electrical specs, pin-level functional roles, and direct alternatives for legacy SRAM replacement in radiation-tolerant or long-lifecycle embedded designs.
Technical Context
This device implements fully static asynchronous operation-no clocks or refresh required-and uses advanced CMOS technology to eliminate alpha-particle soft-error susceptibility. Its control logic supports three distinct operational modes (standby, read, write) governed by CS, OE, and WE inputs, with automatic transition to low-power standby when CS is HIGH.
The memory array is organized as 128 × 128 bits, with address decoding covering A0–A10 (11-bit addressing). All I/Os are bidirectional and directly TTL-compatible, enabling seamless integration into legacy 5V microprocessor buses without level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), supporting byte-wide data paths in 8-bit microcontroller systems |
| Access Time (tAA) | 90ns max (military grade, –55°C to +125°C), defining minimum clock cycle spacing for reliable read setup |
| Supply Voltage | 5.0V ±10%, compatible with standard TTL logic rails and legacy 5V power domains |
| Operating Current (ICC1) | 130mA max (military grade), specifying peak dynamic draw during continuous read/write cycling |
| Standby Current (ISB) | 45mA max (TTL-level CS), enabling system-level power savings when chip is deselected |
| Input/Output Compatibility | TTL-compatible VIH/VIL thresholds (2.2V/0.8V), eliminating need for bus interface translators |
| Temperature Range | –55°C to +125°C, validated for deployment in airborne, missile, and space-qualified platforms |
Pinout & Package
Package: 24-pin 600mil ceramic dual in-line package (CD24), hermetically sealed for moisture resistance and thermal stability in extended military environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit parallel address bus accepting 0–2047 row/column selections for full 2K-word access |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit shared data path handling both read outputs and write inputs under OE/WE control |
| CS | Chip Select | Active-low enable that gates all internal operations; HIGH forces full standby mode |
| OE | Output Enable | Active-low control for tri-state output drivers; must be LOW during valid read cycles |
| WE | Write Enable | Active-low signal initiating write cycles when CS is also LOW; defines write pulse width (tWP ≥ 50ns) |
| VCC | Power Supply | +5V ±10% supply input; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground Reference | Signal and power ground reference plane; requires low-inductance connection per military PCB standards |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh circuitry needed-reduces system complexity and eliminates refresh-induced bus contention |
| MIL-STD-883 Class B Compliance | Fully tested to military screening standards including burn-in, temperature cycling, and hermeticity verification |
| Alpha-Particle Immunity | CMOS process minimizes soft-error rate (SER), critical for high-reliability aerospace data storage |
| Low-Power Standby Mode | Reduces system cooling load and battery drain when deselected-enables always-on monitoring subsystems |
| TTL-Compatible I/O | Direct interfacing with legacy 8080, Z80, and 68000 family processors without external level shifters |
Applications
| Avionics Flight Control Memory | Tactical Radio Buffer Storage |
|---|---|
Use Scenario: Real-time storage of sensor fusion data and flight command history in fly-by-wire ECUs operating at altitude. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical state variables during processor reset or transient voltage dips. Use Value: 90ns access ensures deterministic response within 200ns interrupt latency budgets; MIL-STD-883 qualification guarantees operation at –55°C cabin temperatures. | Use Scenario: Temporary packet buffering in encrypted HF/VHF manpack radios exposed to wide thermal swings and EMI. IC Role / Device Role / Timing Role: High-reliability SRAM providing jitter-free data staging between baseband ASIC and RF transceiver. Use Value: Ceramic DIP package withstands mechanical shock and thermal cycling; TTL compatibility avoids signal integrity degradation on long backplane traces. |
| Missile Guidance System Cache | Spacecraft Telemetry History Log |
Use Scenario: Storing real-time inertial measurement unit (IMU) corrections and guidance trajectory updates during boost phase. IC Role / Device Role / Timing Role: Low-latency, radiation-hardened memory buffer feeding Kalman filter co-processors. Use Value: Alpha-immune CMOS design prevents single-event upsets (SEUs); 90ns tAA enables sub-microsecond update cycles for closed-loop control. | Use Scenario: Onboard logging of housekeeping telemetry (voltage, temperature, attitude) during orbital insertion and commissioning phases. IC Role / Device Role / Timing Role: Radiation-tolerant, long-lifecycle SRAM retaining mission-critical status data across multi-year missions. Use Value: Hermetic CD24 package resists atomic oxygen erosion; –55°C to +125°C range covers eclipse-to-sun thermal extremes in LEO/GEO orbits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 6116SA70DB | 70ns max access time (20ns faster), same CD24 package and MIL-STD-883 Class B compliance | Suitable where tighter timing margins are required in high-throughput guidance loops | Select when system timing budget demands sub-90ns read cycles without changing PCB layout or thermal management |
| 6116LA90DB | Same 90ns speed and CD24 package, but LA variant offers 0.1mA full-standby current (vs. 45mA TTL standby) | Preferred for battery-backed or ultra-low-power dormant modes in portable defense electronics | Choose when extended data retention at 2V or micropower sleep states are mandatory, accepting identical active power draw |
Compared with 6116SA90DB, 6116SA70DB delivers higher performance in timing-critical subsystems, while 6116LA90DB trades active-mode current headroom for orders-of-magnitude lower standby consumption-both retain identical pinout, military qualification, and 5V TTL interface.
Availability
6116SA90DB is available at Aetrix Electronics and suitable for avionics, tactical communications, missile guidance, and spacecraft telemetry systems requiring stable component supply across extended product lifecycles and extreme environmental conditions.
Supply support for 6116SA90DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.
The 6116SA/LA family was designed specifically for legacy-system SRAM replacement in military and space applications demanding proven reliability, wide temperature operation, and MIL-STD-883 qualification-prioritizing longevity and radiation tolerance over density scaling.
FAQ
What is the maximum operating temperature range for the 6116SA90DB?
The 6116SA90DB is rated for –55°C to +125°C operation, validated per MIL-STD-883 Class B requirements. This range is confirmed in the Absolute Maximum Ratings table and supported by DC/AC characterization across the full military temperature span. The 6116SA90DB's ceramic DIP package ensures thermal stability under sustained high-temperature bias conditions typical in engine bays or sealed avionics enclosures.
Does the 6116SA90DB require external refresh circuitry?
No, the 6116SA90DB is a fully static RAM and requires no clocks or refresh signals. Its CMOS latch-based memory cells retain data indefinitely as long as VCC is applied and CS remains LOW during active use. This eliminates refresh overhead in microprocessor systems and avoids timing conflicts on shared address/data buses-key for deterministic real-time applications using the 6116SA90DB.
What is the pin-compatible alternative to the 6116SA90DB with lower standby power?
The 6116LA90DB is pin-compatible with the 6116SA90DB and shares identical CD24 packaging, 90ns speed grade, and MIL-STD-883 Class B qualification. Its key distinction is full-CMOS standby mode (ISB1 = 0.1mA), reducing quiescent draw by >99% versus the 6116SA90DB's TTL-level standby (45mA). Both parts use identical pinout and logic thresholds, enabling drop-in substitution where micropower retention is prioritized.
Can the 6116SA90DB interface directly with a 5V TTL microprocessor bus?
Yes, the 6116SA90DB features fully TTL-compatible inputs and outputs: VIH = 2.2V min, VIL = 0.8V max, VOH = 2.4V min at –4mA, and VOL = 0.4V max at 8mA. These specifications match standard 5V TTL logic families (e.g., 74LS, 74F), allowing direct connection to address/data/control lines of 8085, Z80, or 68000 derivatives without level-shifting components-verified in the DC Electrical Characteristics tables for the 6116SA90DB.
Is the 6116SA90DB supplied in a hermetically sealed package?
Yes, the 6116SA90DB uses a 24-pin 600mil ceramic dual in-line package (CD24), which is hermetically sealed per MIL-STD-883 requirements. This construction provides immunity to moisture ingress, thermal shock, and outgassing-critical for long-duration deployment in vacuum or high-humidity military environments. The CD24 package is explicitly listed in the Orderable Part Information table for the 6116SA90DB.
6116SA90DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.600", 15.24mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA90DB FAQ
1.How can I place an order for 6116SA90DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA90DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA90DB reliable?
The price and inventory of 6116SA90DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA90DB is usually 5 days.
3.What payment methods are accepted for 6116SA90DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA90DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA90DB?
6116SA90DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA90DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA90DB?
For technical support, including 6116SA90DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA90DB requirements.
6.How does Aetrix verify that 6116SA90DB is sourced from the original manufacturer or authorized distributors?
All 6116SA90DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA90DB meets industry standards.
7.What is the process for return or replacement of 6116SA90DB?
All 6116SA90DB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA90DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA90DB part is unused and in its original packaging.
Return procedure for 6116SA90DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA90DB Tags
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