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Renesas 6116SA90TDB
- Part No.:
- 6116SA90TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
6116SA90TDB.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,022
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Product details
Overview
6116SA90TDB from Renesas Electronics is a 16K-bit (2K × 8) high-speed CMOS static RAM with 90ns maximum access time, TTL-compatible I/O, and military-grade reliability compliant to MIL-STD-883 Class B. It operates across –55°C to +125°C, consumes ≤45mA active current and ≤10mA standby current (TTL-level CS), and is packaged in a 24-pin ceramic DIP (SD24) for harsh-environment embedded systems.
For engineers reviewing the 6116SA90TDB datasheet, 6116SA90TDB pinout, 6116SA90TDB application, or 6116SA90TDB equivalent, this page delivers verified timing specs, military temperature validation, DC/AC electrical characteristics, pin-level functional roles, and direct alternative part guidance - all confirmed against Renesas' July 2020 rebranded datasheet (document 3089).
Technical Context
The 6116SA90TDB implements fully static asynchronous operation-no clocks or refresh required-and uses advanced CMOS technology to eliminate alpha-particle soft errors. Its control logic supports three distinct operational modes: standby (CS HIGH → high-impedance I/O, ISB ≤10mA), read (CS & OE LOW, WE HIGH), and write (CS & WE LOW).
It features dual power supply current profiles: ICC1 = 90mA max (active, f = 0), ISB = 10mA max (TTL-level standby), and ISB1 = 10mA max (CMOS-level full standby). Data retention is not supported-this is the SA (standard power) variant, not the LA battery-backup version.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 90ns max at VCC = 5.0V ±10%, TA = –55°C to +125°C - defines minimum address-to-data valid delay |
| Supply Voltage | 4.5V–5.5V - compatible with standard 5V TTL logic rails |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for aerospace/military use |
| Active Current (ICC1) | 90mA max - determines system-level power budget during continuous read/write |
| Standby Current (ISB) | 10mA max (TTL-level CS) - enables low-power hold mode without external circuitry |
| I/O Compatibility | TTL input thresholds (VIH ≥2.2V, VIL ≤0.8V) and output drive (VOH ≥2.4V @ –4mA, VOL ≤0.4V @ 8mA) |
Pinout & Package
6116SA90TDB is housed in a 24-pin ceramic dual in-line package (CDIP), type SD24 (300-mil width), with through-hole mounting and hermetic sealing suitable for high-reliability applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS or OE inactive |
| CS | Chip Select | Active-low enable; drives device into standby (high-Z I/O) when HIGH |
| WE | Write Enable | Active-low control; initiates write cycle when CS also LOW |
| OE | Output Enable | Active-low control; enables output drivers only during read cycles |
| VCC | Power Supply | +5V ±10% main supply; powers core logic and I/O buffers |
| GND | Ground Reference | Signal and power return plane; decoupling required per MIL-STD-883 layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock or refresh circuitry needed - simplifies system timing design and reduces BOM count |
| MIL-STD-883 Class B compliance | Qualified for military temperature range and reliability testing - eliminates need for additional qualification effort |
| TTL-compatible I/O | Direct interfacing with legacy 5V microcontrollers and bus controllers without level-shifting |
| Low standby power (ISB ≤10mA) | Reduces thermal load and extends battery life in intermittently active systems |
| CMOS process immunity to alpha particles | Eliminates soft-error-induced bit flips in radiation-prone environments (e.g., avionics, space) |
Applications
| Avionics Flight Control Systems | Tactical Radios |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight control lookup tables in FPGAs or microcontrollers operating across –55°C to +125°C. IC Role / Device Role / Timing Role: Byte-accessible, non-refreshing SRAM providing deterministic 90ns read/write latency for safety-critical control loops. Use Value: MIL-STD-883 qualification ensures operation under vibration, shock, and extreme thermal cycling without data corruption. | Use Scenario: Buffering encrypted voice packets and protocol stack variables in handheld military radios exposed to desert and arctic conditions. IC Role / Device Role / Timing Role: High-reliability, low-standby-current SRAM supporting rapid wake-from-sleep operation with zero refresh overhead. Use Value: TTL compatibility allows direct connection to legacy ASICs; 90ns access enables real-time packet assembly/disassembly. |
| Secure Embedded Cryptographic Modules | Industrial Programmable Logic Controllers |
Use Scenario: Storing ephemeral key material and intermediate cipher states in tamper-resistant HSMs deployed in classified infrastructure. IC Role / Device Role / Timing Role: Secure, non-volatile-retention SRAM used as volatile working memory - immune to alpha-induced faults during cryptographic computation. Use Value: CMOS soft-error immunity prevents undetected bit flips that could compromise encryption integrity. | Use Scenario: Holding ladder logic state variables and I/O mapping tables in DIN-rail-mounted PLCs operating continuously in factory environments up to +85°C ambient. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for legacy 6116 designs requiring extended temperature support and proven long-term availability. Use Value: SD24 ceramic DIP package offers superior thermal stability and moisture resistance versus plastic alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61C256AL-12JL | 32K × 8-bit, 12ns access, 5V-only, SOJ-28 package | Higher density and speed but incompatible pinout and package; requires PCB redesign | Select only if system demands >16K capacity and can accommodate SOJ footprint and faster timing margins. |
| AS6C4008-90PCN | 512K × 8-bit, 90ns access, 5V, 28-pin SOIC - no military temp grade | Same access time but commercial-grade only (0°C to +70°C); lacks MIL-STD-883 qualification | Acceptable for cost-sensitive industrial applications where extended temperature operation is not required. |
Compared with IS61C256AL-12JL and AS6C4008-90PCN, the 6116SA90TDB uniquely delivers military-qualified 2K×8 SRAM in a through-hole ceramic DIP - preserving legacy board layouts while guaranteeing operation across –55°C to +125°C without derating.
Availability
6116SA90TDB is available at Aetrix Electronics and suitable for avionics flight control systems, tactical radios, secure cryptographic modules, and industrial programmable logic controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 6116SA90TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 6116SA90TDB belongs to Renesas' legacy CMOS static RAM product line, designed specifically for high-reliability, military-temperature applications where deterministic timing, radiation tolerance, and long-term obsolescence management are critical.
FAQ
What is the maximum operating temperature range for the 6116SA90TDB?
The 6116SA90TDB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B. This specification is explicitly guaranteed in the Renesas datasheet (Rev. Jul.17.20, Table 4), making it suitable for deployment in aerospace, defense, and downhole industrial systems where thermal extremes are routine.
Does the 6116SA90TDB support battery backup data retention?
No, the 6116SA90TDB does not support battery backup. It is the SA (standard power) variant; only LA-series parts (e.g., 6116LA90TDB) specify 2V data retention voltage and sub-microwatt retention current. The 6116SA90TDB's ISB1 = 10mA reflects CMOS-level standby, not data retention mode.
Is the 6116SA90TDB pin-compatible with other 6116 variants like the 6116LA25TDB?
Yes - all 6116SA/LA variants share identical 24-pin SD24 ceramic DIP pinouts and functional pin assignments (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND). The 6116SA90TDB is functionally and physically interchangeable with other TDB-packaged 6116 parts, differing only in access time, power profile, and temperature grading.
What is the standby current consumption of the 6116SA90TDB when CS is HIGH?
When CS is driven HIGH (TTL-level, >2.2V), the 6116SA90TDB enters TTL-level standby mode with ISB ≤10mA maximum (per datasheet Table 8, MIL grade). This value is measured at VCC = 5.5V and f = fMAX, ensuring worst-case power budgeting for system thermal design.
Can the 6116SA90TDB be used with 3.3V logic systems?
No - the 6116SA90TDB is strictly a 5V device. Its DC specifications (VIH min = 2.2V, VIL max = 0.8V, VCC = 4.5–5.5V) and AC timing are characterized only at 5V ±10%. Interfacing with 3.3V systems requires level translation; Renesas does not guarantee operation or timing at reduced VCC.
6116SA90TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
6116SA90TDB FAQ
1.How can I place an order for 6116SA90TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 6116SA90TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 6116SA90TDB reliable?
The price and inventory of 6116SA90TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 6116SA90TDB is usually 5 days.
3.What payment methods are accepted for 6116SA90TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 6116SA90TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 6116SA90TDB?
6116SA90TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 6116SA90TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 6116SA90TDB?
For technical support, including 6116SA90TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 6116SA90TDB requirements.
6.How does Aetrix verify that 6116SA90TDB is sourced from the original manufacturer or authorized distributors?
All 6116SA90TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 6116SA90TDB meets industry standards.
7.What is the process for return or replacement of 6116SA90TDB?
All 6116SA90TDB units undergo pre-shipment inspection (PSI). If there is an issue with 6116SA90TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 6116SA90TDB part is unused and in its original packaging.
Return procedure for 6116SA90TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
6116SA90TDB Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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