Renesas 7005L55J

Overview

IDT7005L55J from Integrated Device Technology (IDT) is a high-speed 8K × 8 dual-port static RAM with true independent left/right port access, 55 ns maximum read cycle time, TTL-compatible 5 V ±10% operation, and integrated semaphore/arbiter logic for inter-processor communication in real-time embedded systems.

For engineers reviewing the IDT7005L55J datasheet, IDT7005L55J pinout, IDT7005L55J application, or IDT7005L55J equivalent, this page delivers verified timing specs, master/slave arbitration behavior, battery-backed data retention at 2 V, and precise TQFP-64 package mapping - all critical for multiprocessor memory coherency design.

Technical Context

The IDT7005L55J implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port, enabling simultaneous read/write operations to distinct addresses without contention. Its on-chip arbitration logic resolves port conflicts via BUSY flag assertion based on address match or chip enable timing.

It supports semaphore signaling across ports using dedicated SEM pins and A0–A2 address lines to access eight shared flags, with tSPS = 5 ns contention window and tSWRD = 5 ns write-to-read latency - ensuring deterministic interlock behavior in real-time OS kernels and FPGA-based controllers.

Key Specifications

Pinout & Package

Package: 64-pin thin quad flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, lead pitch 0.5 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C136-55JC and AS7C38096B-55TIN, the IDT7005L55J uniquely integrates arbitration, semaphore, and interrupt logic in a single 5 V, MIL-spec package - reducing board area, BOM count, and firmware complexity in safety-critical dual-processor systems.

Availability

IDT7005L55J is available at Aetrix Electronics and suitable for avionics flight control systems, industrial PLC dual-processor modules, and secure military radio baseband processors requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IDT7005L55J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for high-performance computing and communications.

The IDT7005L55J belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic inter-processor communication in real-time embedded systems demanding MIL-qualified reliability and hardware-accelerated synchronization.

FAQ

What is the guaranteed maximum access time for IDT7005L55J across its full operating temperature range?

The IDT7005L55J guarantees a maximum read cycle time (tRC) of 55 ns over the full military temperature range of −55°C to +125°C. This specification is validated per MIL-PRF-38535 QML testing and applies to both ports under worst-case voltage (4.5 V) and temperature conditions. The 55 ns value is not typical or average - it is the production-tested upper limit for reliable operation.

Does IDT7005L55J support true simultaneous read operations from both ports to the same memory address?

Yes, the IDT7005L55J supports true simultaneous reads from both ports to the same memory address without contention or BUSY assertion. Its dual-port memory cell architecture allows concurrent access with no arbitration delay. This behavior is explicitly confirmed in the "Features" section of the datasheet and verified in Truth Table I under non-contention read conditions.

How does the M/S pin affect BUSY signal behavior in IDT7005L55J?

When M/S = H, IDT7005L55J operates as a master: BUSYL and BUSYR become push-pull outputs that assert LOW during port arbitration conflicts. When M/S = L, it operates as a slave: BUSYL and BUSYR become inputs that must be driven externally to inhibit writes - a configuration used when cascading multiple devices in a master/slave topology. This dual-mode behavior is defined in Note 1 of the Pin Names table.

Can IDT7005L55J retain data when powered solely by a 2 V backup supply?

Yes, IDT7005L55J supports full data retention at VCC = 2.0 V, as specified in DC Electrical Characteristics Table 9. This capability enables battery-backed operation during main power failure. The device draws ≤4000 µA (military grade) in retention mode, allowing years of standby with standard lithium coin cells - a feature unique to the "L" (low-power) variant.

What package type is used for IDT7005L55J, and are thermal pads or exposed grounds included?

IDT7005L55J is packaged in a 64-pin thin quad flatpack (TQFP) with dimensions 14 mm × 14 mm × 1.4 mm and 0.5 mm lead pitch. Per the Pin Configuration drawing (2738 drw 03), it contains no thermal pad or exposed ground slug - all 64 pins are signal/power/ground connections distributed around the perimeter. Thermal management relies on PCB copper pour and standard reflow profiles for TQFP packages.