Renesas 7005S25G

Overview

7005S25G from IDT is a high-speed 8K × 8 (64 Kbit) true dual-port static RAM with independent left/right ports, 25 ns maximum read cycle time (tRC), TTL-compatible 5 V ±10% supply, and integrated hardware semaphore/arbitration logic for concurrent access coordination. It enables full-speed 16-bit+ memory expansion in real-time embedded systems requiring deterministic inter-processor communication.

For engineers reviewing the 7005S25G datasheet, 7005S25G pinout, 7005S25G application, or 7005S25G equivalent, this page delivers verified timing specs, master/slave BUSY arbitration behavior, semiconductor-grade DC/AC electrical characteristics, and confirmed industrial temperature support (–40°C to +85°C) per MIL-PRF-38535 QML-compliant manufacturing.

Technical Context

The 7005S25G implements fully asynchronous dual-port operation with separate address, data, and control buses per port (A0L–A12L/I/O0L–I/O7L/R/WL/CEL/OEL on left; A0R–A12R/I/O0R–I/O7R/R/WR/CER/OER on right), enabling simultaneous reads-even from the same memory location-without contention. Its on-chip arbitration logic resolves port conflicts via BUSY flag assertion (push-pull output when M/S = H, input when M/S = L) and supports semaphore signaling across eight flags addressed by A0–A2.

It features automatic power-down via CE control (ISB1 ≤ 16 mA typ. at 25 ns speed), battery backup data retention down to 2 V (ICCDR ≤ 4000 µA), and ESD tolerance >2001 V. Fabricated in CMOS, it delivers 750 mW typical active power and 5 mW standby power, meeting industrial reliability requirements without external logic.

Key Specifications

Pinout & Package

7005S25G is packaged in a 64-pin thin quad flatpack (TQFP), measuring 14 mm × 14 mm × 1.4 mm, with 0.5 mm pitch and exposed thermal pad. All VCC pins require decoupling; all GND pins must be connected to ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-25AXC and R1EX24002AS0C-25, the 7005S25G uniquely combines 5 V TTL compatibility, industrial temperature range, MIL-PRF-38535 qualification, and hardware semaphore support - making it irreplaceable in safety-critical or legacy 5 V embedded systems.

Availability

7005S25G is available at Aetrix Electronics and suitable for industrial PLCs, avionics interfaces, medical imaging subsystems, telecom baseband modules, and defense electronics requiring stable component supply with long-term lifecycle assurance.

Supply support for 7005S25G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 7005S25G belongs to IDT's legacy dual-port SRAM product line, designed specifically for deterministic inter-processor communication in real-time embedded systems where hardware-coordinated memory access is mandatory.

FAQ

What is the guaranteed maximum access time for the 7005S25G under industrial temperature conditions?

The 7005S25G guarantees a maximum read cycle time (tRC) of 25 ns over the full industrial temperature range (–40°C to +85°C), as specified in Table 13a of the official IDT datasheet. This value is production-tested and applies to both ports under worst-case voltage (4.5 V) and temperature conditions. The 7005S25G achieves this performance using high-speed CMOS process technology and on-die timing compensation.

Does the 7005S25G support battery backup operation, and what is the minimum retention voltage?

Yes, the 7005S25G supports battery backup operation with a minimum data retention voltage of 2.0 V, as confirmed in Table 9 (Data Retention Characteristics). At VCC = 2 V, it retains valid data with ICCDR ≤ 4000 µA (max) across all temperature ranges. This feature enables seamless operation during main power failure in critical infrastructure applications such as medical devices and industrial controllers.

How does the M/S pin configure master/slave operation in the 7005S25G?

In the 7005S25G, the M/S pin configures port arbitration behavior: when M/S = HIGH, the device operates as a Master with BUSYL and BUSYR as push-pull outputs that assert during port contention; when M/S = LOW, it operates as a Slave with BUSYL and BUSYR as inputs that inhibit writes when driven low by a Master. This configuration enables cascaded 16-bit+ memory expansion without external logic, as documented in the Functional Block Diagram and Pin Names table.

Can the 7005S25G perform simultaneous reads from the same memory address on both ports?

Yes, the 7005S25G supports true simultaneous reads from the same memory address on both left and right ports - a defining characteristic of its "true dual-port" architecture. This capability is explicitly stated in the Features section and requires no arbitration delay or BUSY assertion. It enables lock-free data sharing in symmetric multiprocessing systems, unlike pseudo-dual-port or pipelined SRAMs that serialize concurrent accesses.

What package type and dimensions does the 7005S25G use?

The 7005S25G uses a 64-pin thin quad flatpack (TQFP) package, designated PNG64, with body dimensions of 14 mm × 14 mm × 1.4 mm and 0.5 mm lead pitch. This surface-mount package is RoHS-compliant and thermally enhanced with an exposed pad. Pin configuration matches the top-view diagram in Drawing 2738 drw 03, and all VCC/GND pins must be properly decoupled per the layout guidelines in the datasheet.