Renesas 7006L35PF8

Overview

IDT7006L35PF8 from Integrated Device Technology (IDT) is a high-speed 16K × 8 dual-port static RAM with true independent left/right port access, 35 ns maximum read cycle time, TTL-compatible 5V ±10% operation, and industrial temperature range (–40°C to +85°C). It supports simultaneous reads of the same memory location and enables master/slave cascading for 16-bit-or-wider bus expansion in real-time inter-processor communication systems.

For engineers reviewing the IDT7006L35PF8 datasheet, IDT7006L35PF8 pinout, IDT7006L35PF8 application, or IDT7006L35PF8 equivalent, key selection criteria include dual-port arbitration timing (tBDD ≤ 35 ns), low-power standby current (1 µA typ.), BUSY/INT semaphore signaling, battery-backed data retention at 2V, and compatibility with 64-pin TQFP layout constraints.

Technical Context

The IDT7006L35PF8 implements fully asynchronous dual-port architecture with on-chip arbitration logic that resolves contention via BUSY flag assertion-either address-match or chip-enable triggered-ensuring deterministic port priority. Its semaphore subsystem uses A0–A2 to select among eight flags, with dedicated SEM/SEML/SEMR pins enabling hardware-accelerated mutual exclusion between ports.

It features separate control paths per port (CEL/CER, R/WL/R/WR, OEL/OER), independent I/O buses (I/O0L–I/O7L / I/O0R–I/O7R), and automatic power-down when CE is high. The device operates in two distinct modes: RAM access (SEM = VIH, CE = VIL) and semaphore register access (SEM = VIL, CE = VIH), with non-overlapping timing requirements validated per AC table 13b and 14b.

Key Specifications

Pinout & Package

Package: 64-pin Thin Quad Flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, lead pitch 0.5 mm, RoHS-compliant green variant available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35AXC and AS7C3256B-35JCIN, the IDT7006L35PF8 uniquely delivers 5V-native operation, integrated BUSY/INT/SEM logic, and 64-pin TQFP footprint-making it optimal for industrial control upgrades requiring minimal PCB redesign and deterministic real-time coherency.

Availability

IDT7006L35PF8 is available at Aetrix Electronics and suitable for real-time inter-processor communication, digital signal processing buffering, and redundant control system memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT7006L35PF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions before its acquisition by Renesas Electronics in 2019. IDT pioneered high-performance dual-port SRAM architectures for mission-critical embedded systems.

The IDT7006 family was designed specifically for deterministic real-time shared-memory applications in industrial automation, telecommunications infrastructure, and military computing-where hardware-enforced arbitration and battery-backed retention are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT7006L35PF8?

The IDT7006L35PF8 has a maximum read cycle time (tRC) of 35 ns, supporting sustained operation up to 28.6 MHz per port. This value is guaranteed across the full industrial temperature range (–40°C to +85°C) and 5.0 V ±10% supply, with no derating required. The device does not specify a clock frequency since it is asynchronous; timing is governed entirely by control signal setup/hold and propagation delays documented in Tables 13b and 14b.

Does the IDT7006L35PF8 support true simultaneous access to the same memory location from both ports?

Yes, the IDT7006L35PF8 supports true simultaneous reads of the same memory location from left and right ports without contention or arbitration delay. However, simultaneous writes to the same address trigger BUSY flag assertion to prevent data corruption. The device's dual-port cell architecture and on-chip arbitration logic ensure deterministic resolution-either via address-match or chip-enable priority-with tAPS = 5 ns setup time guaranteeing reliable flag assertion.

How does the BUSY arbitration mechanism work in the IDT7006L35PF8?

In the IDT7006L35PF8, BUSY arbitration activates when both ports attempt access to the same memory address. With M/S = VIH (Master), BUSYL/BUSYR become outputs asserting active-low to block the contending port; with M/S = VIL (Slave), BUSY becomes an input accepting the master's signal. Timing parameters tBAA (≤35 ns), tBDA (≤35 ns), and tBDD (≤35 ns) define response latency and data validity windows, ensuring deterministic resolution without software intervention.

Can the IDT7006L35PF8 retain data during main power loss?

Yes, the IDT7006L35PF8 supports battery-backed data retention at VCC = 2.0 V minimum, drawing only 100 µA typical (ICCDR) in this mode. This allows retention for months on standard CR2032 coin cells. The device automatically enters retention mode when VCC drops below 2.0 V while CE remains asserted, preserving all 128 Kbits without external circuitry-critical for fail-safe logging and state recovery in industrial controllers.

What package type is used for the IDT7006L35PF8 and what are its key mechanical dimensions?

The IDT7006L35PF8 uses a 64-pin Thin Quad Flatpack (TQFP) package designated PNG64, with body dimensions of 14 mm × 14 mm × 1.4 mm and 0.5 mm lead pitch. It features exposed thermal pad (pin 33) and conforms to JEDEC MO-220 standards. This package supports automated SMT assembly, offers superior thermal performance versus PGA variants, and fits compact industrial PCB layouts requiring high I/O density.