Renesas 7006L35PFI8

Overview

7006L35PFI8 from IDT is a high-speed 16K × 8 (131,072-bit) dual-port static RAM with true independent left/right port access, 35 ns maximum read cycle time, 2V data retention capability, and industrial temperature range (–40°C to +85°C). It enables simultaneous asynchronous reads of the same memory location and supports MASTER/SLAVE cascading for 16-bit-or-wider bus expansion in real-time inter-processor communication systems.

For engineers reviewing the 7006L35PFI8 datasheet, 7006L35PFI8 pinout, 7006L35PFI8 application, or 7006L35PFI8 equivalent, this page delivers verified timing specs (tRC = 35 ns), power metrics (700 mW active / 1 µA standby), arbitration logic behavior, BUSY/INT/SEM flag operation, and TQFP-64 package compatibility - all critical for deterministic dual-ported memory integration in embedded control and avionics subsystems.

Technical Context

The 7006L35PFI8 implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port, enabling concurrent read/write operations without external arbitration logic. Its on-chip arbitration resolves contention via BUSY flag assertion (output when M/S = H, input when M/S = L) and supports semaphore signaling across ports using A0–A2 address lines to access eight dedicated flags.

It features TTL-compatible 5V ±10% single-supply operation, battery backup support down to 2V for data retention, and integrated power-down control via CE pins per port. The device uses CMOS process technology and includes ESD protection (>2001 V), non-tri-stated push-pull BUSY/INT outputs, and full hardware semaphore enable/disable (SEML/SEMR).

Key Specifications

Pinout & Package

7006L35PFI8 is packaged in a 64-pin thin quad flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, with 0.5 mm lead pitch. All VCC and GND pins must be connected per datasheet layout guidelines to ensure signal integrity and thermal stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35AXC and IS61LV25616AL-10TLI, the 7006L35PFI8 uniquely delivers industrial-temperature 5V dual-port operation with integrated arbitration, 2V retention, and TQFP-64 packaging - making it irreplaceable for legacy 5V real-time control systems requiring hardware-enforced concurrency.

Availability

7006L35PFI8 is available at Aetrix Electronics and suitable for real-time inter-processor communication, avionics data buffering, and industrial PLC I/O mapping requiring stable component supply across extended product lifecycles.

Supply support for 7006L35PFI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and power management ICs, now part of Renesas Electronics.

The 7006L35PFI8 belongs to IDT's legacy high-speed dual-port SRAM product line, designed specifically for deterministic, low-latency memory sharing between independent processors in aerospace, industrial automation, and telecommunications infrastructure.

FAQ

What is the maximum read cycle time (tRC) specified for the 7006L35PFI8?

The 7006L35PFI8 has a maximum read cycle time (tRC) of 35 ns across its full industrial temperature range (–40°C to +85°C). This value is guaranteed under VCC = 5.0 V ±10% and defines the minimum interval between successive read operations on the same port. The 7006L35PFI8 achieves this timing without requiring external wait-state generation, enabling tight integration into high-speed microcontroller and DSP memory interfaces.

Does the 7006L35PFI8 support battery backup operation, and what is the minimum retention voltage?

Yes, the 7006L35PFI8 supports battery backup operation with a minimum data retention voltage of 2.0 V. In retention mode (CE > VHC, VIN > VHC or < VLC), the device draws ≤4000 µA in military/industrial grades, preserving stored data during main power loss. This feature is intrinsic to the L-version silicon and is validated across the full operating temperature range - a key differentiator versus standard S-version parts.

How does the M/S pin configure BUSY functionality on the 7006L35PFI8?

The M/S pin configures BUSY as an output when pulled HIGH (MASTER mode), asserting BUSY to block the opposing port during address/contention arbitration. When pulled LOW (SLAVE mode), BUSY becomes an input, allowing the device to respond to BUSY signals from a master in cascaded configurations. This dual-role behavior is hardwired in the 7006L35PFI8's arbitration logic and requires no firmware configuration - ensuring deterministic hardware-level coordination.

Can the 7006L35PFI8 perform simultaneous reads from both ports to the same memory address?

Yes, the 7006L35PFI8 supports true simultaneous reads from both ports to the same memory address without contention or arbitration delay. Its dual-port SRAM cell architecture permits concurrent access with no BUSY assertion or timing penalty - a fundamental capability confirmed in the functional description and truth tables. This behavior is distinct from write operations, which trigger BUSY-based arbitration when targeting identical locations.

What package type and pin count does the 7006L35PFI8 use?

The 7006L35PFI8 uses a 64-pin thin quad flatpack (TQFP) package, designated PNG64 in IDT documentation, with dimensions of 14 mm × 14 mm × 1.4 mm and 0.5 mm lead pitch. This surface-mount package is RoHS-compliant and supports automated assembly. Pin assignments match the standardized 7006 family layout, including dedicated VCC/GND pairs and mirrored I/O/control signals for left/right ports.