Renesas 7006S20PF

Overview

7006S20PF from IDT is a high-speed 16K × 8 dual-port static RAM with true independent left/right port access, 20 ns maximum read cycle time (commercial/industrial/military), 5 V ±10% single-supply operation, and on-chip semaphore arbitration logic for inter-port synchronization - used in real-time embedded systems requiring concurrent CPU/DSP memory access.

For engineers reviewing the 7006S20PF datasheet, 7006S20PF pinout, 7006S20PF application, or 7006S20PF equivalent, key selection criteria include BUSY flag timing (tBAA ≤ 20 ns), dual-port arbitration latency, 2V data retention capability, and compatibility with 64-pin TQFP layout constraints.

Technical Context

The 7006S20PF implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port, enabling simultaneous reads from identical memory locations without contention. Its on-chip arbitration logic resolves port conflicts via BUSY flag assertion and supports master/slave cascading using M/S pin configuration.

It integrates full hardware semaphore signaling (8 flags addressed by A0–A2), interrupt generation (INTL/INTR), and automatic power-down via CE-controlled standby mode. The device operates across –40°C to +85°C (industrial grade) and withstands >2001 V ESD per HBM.

Key Specifications

Pinout & Package

7006S20PF is packaged in a 64-pin thin quad flatpack (TQFP, package code PNG64), with 48 signal pins (including dual-port address/data/control), 8 power/ground pins (4 VCC, 4 GND), and 8 no-connect (N/C) pins. All VCC and GND pins must be externally decoupled per datasheet layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C136-20JC and AS7C316000B-20TIN, the 7006S20PF uniquely delivers integrated semaphore arbitration, 5 V compatibility, and deterministic BUSY-based conflict resolution - critical for safety-critical and real-time deterministic applications where external logic adds latency and failure modes.

Availability

7006S20PF is available at Aetrix Electronics and suitable for real-time digital signal processing, industrial motion control, avionics data acquisition, and medical imaging buffering requiring stable component supply across extended product lifecycles.

Supply support for 7006S20PF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 7006S20PF belongs to IDT's legacy dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor communication in military, industrial, and aerospace systems demanding hardware-enforced memory coherency.

FAQ

What is the maximum operating temperature range supported by the 7006S20PF?

The 7006S20PF is rated for industrial temperature operation from –40°C to +85°C. This range is validated per datasheet specifications and applies to all speed grades including the 20 ns version. Operation outside this range may result in timing violations or data retention failure, especially below –40°C where propagation delays increase and above +85°C where leakage current rises significantly. The 7006S20PF does not support extended military-grade temperature ranges unless explicitly ordered as a MIL-PRF-38535 QML Class B variant.

Does the 7006S20PF support battery backup operation, and what voltage is required?

Yes, the 7006S20PF supports battery backup operation with a minimum VCC of 2.0 V for data retention, as specified in the L-version characteristics table. At 2 V, the device retains stored data with typical ISB3 current ≤5 µA. This mode is enabled automatically when main VCC drops below the retention threshold while CE remains asserted. The 7006S20PF does not require external circuitry to enter or maintain retention mode - it is a native function of the CMOS design.

How does the M/S pin affect BUSY flag behavior on the 7006S20PF?

When M/S = VIH, the 7006S20PF operates as a master: BUSYL is an output that asserts low during port contention, and BUSYR is unused. When M/S = VIL, it operates as a slave: BUSYR becomes an input used to block writes until the master releases the BUSY signal, and BUSYL is unused. This configuration enables daisy-chained arbitration in multi-device systems without external logic. The 7006S20PF datasheet confirms this behavior is electrically enforced, not software-configurable.

Can the 7006S20PF perform simultaneous reads from both ports to the same memory address?

Yes, the 7006S20PF supports true simultaneous reads from identical addresses on both ports without contention or timing penalty. This capability stems from its dual-port memory cell architecture, which duplicates sense amplifiers and bitlines per port. The datasheet explicitly states "True Dual-Ported memory cells which allow simultaneous reads of the same memory location" and confirms no BUSY assertion occurs during such operations. Valid data appears at both I/O buses within tAA ≤ 20 ns of address stabilization.

What are the key timing parameters governing semaphore flag access on the 7006S20PF?

Semaphore access on the 7006S20PF requires CE = VIH and SEM = VIL. Key timing parameters include tSAA (semaphore address access time ≤20 ns), tSOP (semaphore update pulse width ≥10 ns), and tSWRD (write-to-read delay ≥5 ns). These values are distinct from RAM array timing and are guaranteed across the full industrial temperature range. Semaphore flags are eight in number, addressed by A0–A2, and accessed via I/O0–I/O7 - all timing is referenced to the active edge of SEM or R/W, not CE.