Renesas 7006S35G

Overview

IDT7006S35G from Integrated Device Technology (IDT) is a high-speed 16K × 8 dual-port static RAM with true independent left/right port access, 35 ns maximum read cycle time, TTL-compatible 5V ±10% supply, and integrated on-chip semaphore and arbitration logic for real-time inter-processor communication in embedded control systems.

For engineers reviewing the IDT7006S35G datasheet, IDT7006S35G pinout, IDT7006S35G application, or IDT7006S35G equivalent, this page delivers verified timing parameters, validated 68-pin PGA package mapping, confirmed industrial temperature range (–40°C to +85°C), and two functionally comparable alternatives with documented interface and power differences.

Technical Context

The IDT7006S35G implements fully asynchronous dual-port architecture with separate address, data, and control buses per port, enabling simultaneous read/write operations-even to the same memory location-via hardware-managed BUSY flag arbitration. Its M/S pin configures master/slave cascading for 16-bit+ bus expansion without external logic.

It integrates dedicated semaphore registers (addressed by A0–A2), interrupt flags (INTL/INTR), and full on-chip arbitration logic that resolves contention deterministically using tAPS priority setup time and tBDD busy-to-data delay-critical for deterministic real-time interlock protocols in motion control and avionics subsystems.

Key Specifications

Pinout & Package

Package: 68-pin ceramic Pin Grid Array (PGA), PLG68, body size ≈ 1.18 in × 1.18 in × 0.16 in. All VCC pins require decoupling; all GND pins must be connected to system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35AXC and AS7C3256A-35JCIN, the IDT7006S35G provides unique on-chip arbitration and semaphore functionality in a 5V-native, industrial-temperature package-reducing BOM count and firmware complexity for real-time deterministic systems.

Availability

IDT7006S35G is available at Aetrix Electronics and suitable for industrial motion control, avionics data exchange, medical imaging buffer, and telecom line card interface applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT7006S35G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The IDT7006S35G belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic inter-processor communication in real-time embedded systems where hardware arbitration and low-latency shared memory are critical.

FAQ

What is the maximum operating temperature range for the IDT7006S35G?

The IDT7006S35G is rated for industrial temperature operation from –40°C to +85°C. This specification is explicitly confirmed in the datasheet's "Maximum Operating Temperature and Supply Voltage" table and applies to all speed grades including the 35 ns variant. The device meets these limits under full dynamic load with 5.0 V ±10% supply and complies with JEDEC JESD22-A108 reliability standards for industrial use.

Does the IDT7006S35G support battery backup operation?

Yes, the IDT7006S35G supports battery backup operation with guaranteed data retention down to 2 V (VDR = 2.0 V). This is specified in the "Data Retention Characteristics" section and validated across all temperature ranges. The low ISB3 standby current (≤1.0 mA) enables multi-year retention on small coin-cell batteries in systems like medical monitors or remote sensors.

How does the M/S pin configure master/slave operation in the IDT7006S35G?

When M/S = H (high), the IDT7006S35G operates as a master with BUSY output asserted during port contention; when M/S = L (low), it functions as a slave with BUSY input accepting arbitration signals from a master device. This configuration enables cascaded 16-bit+ word systems without external logic, as detailed in the functional block diagram and pin description table.

What is the purpose of the semaphore enable (SEML/SEMR) pins on the IDT7006S35G?

The SEML and SEMR pins enable access to the internal 8-bit semaphore register bank. When SEM = VIL and CE = VIH, the device enters semaphore mode-allowing read/write of synchronization flags via I/O0–I/O7 and A0–A2. This hardware-accelerated mechanism replaces software mutexes, reducing inter-processor latency and eliminating race conditions in real-time multitasking environments.

Can the IDT7006S35G perform simultaneous reads from both ports to the same memory address?

Yes, the IDT7006S35G supports true simultaneous reads to the same memory location from both ports without contention or data corruption. This capability is enabled by its true dual-ported memory cell architecture, explicitly stated in the "Features" section and verified in Truth Table I. No BUSY assertion occurs during concurrent reads-only during write-write or read-write contention.