Renesas 7006S55JI8

Overview

7006S55JI8 from IDT is a high-speed 16K × 8 dual-port static RAM with true independent left/right port access, 55 ns maximum read cycle time (tRC), TTL-compatible 5 V ±10% operation, and integrated on-chip semaphore and arbitration logic for inter-port synchronization in real-time systems such as digital signal processors and military avionics data buffers.

For engineers reviewing the 7006S55JI8 datasheet, 7006S55JI8 pinout, 7006S55JI8 application, or 7006S55JI8 equivalent, this device supports simultaneous asynchronous reads/writes across ports, provides BUSY/INT/SEM flags for deterministic contention resolution, and delivers 200 V ESD tolerance and 2 V battery-backed data retention - critical for fault-tolerant embedded memory subsystems.

Technical Context

The 7006S55JI8 implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port, enabling concurrent access without external logic. Its on-chip arbitration resolves port conflicts via BUSY flag assertion (output on Master, input on Slave) and M/S pin configuration.

It integrates full hardware semaphore signaling using A0–A2 to select among eight flags, with dedicated SEM enable pins and interrupt generation (INTL/INTR) triggered by write events. All timing parameters-including tAA (55 ns), tACE (55 ns), and tAOE (30 ns)-are specified over industrial temperature (−40°C to +85°C) and validated for MIL-PRF-38535 Class B compliance.

Key Specifications

Pinout & Package

7006S55JI8 is packaged in a 68-pin ceramic PGA (GU68) with 0.100" pin pitch, requiring mechanical mounting and through-hole reflow. Pin 1 is index-marked; all 12 VCC and 12 GND pins must be individually decoupled per layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-55AXC and AS7C3256A-55JC, the 7006S55JI8 uniquely combines industrial-temperature 5 V operation, built-in BUSY/SEM/INT signaling, and true 8-bit dual-port interface - eliminating glue logic and simplifying certification for safety-critical systems.

Availability

7006S55JI8 is available at Aetrix Electronics and suitable for digital signal processing buffers, military avionics data exchange, and industrial PLC I/O mapping requiring stable component supply across extended product lifecycles.

Supply support for 7006S55JI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics.

The 7006S55JI8 belongs to IDT's legacy dual-port SRAM product line, engineered specifically for deterministic real-time memory sharing between heterogeneous processors in aerospace, defense, and industrial automation systems.

FAQ

What is the guaranteed maximum access time for 7006S55JI8 under industrial temperature conditions?

The 7006S55JI8 guarantees a maximum read cycle time (tRC) of 55 ns and address access time (tAA) of 55 ns over the full industrial temperature range (−40°C to +85°C), as verified in the official IDT datasheet revision Jan.30.20. These values apply to both ports independently and include margin for worst-case voltage (4.5 V) and process variation. The 7006S55JI8 does not require derating for temperature within this grade.

Does 7006S55JI8 support battery backup operation, and what is the minimum retention voltage?

Yes, the 7006S55JI8 supports battery backup operation with guaranteed data retention down to 2.0 V (VDR), as specified in Table 9 of the datasheet. This applies to the "L" variant (low-power), and the 7006S55JI8 is an "S" variant - however, the "S" suffix denotes speed grade only; both S and L versions share identical 2 V retention capability per IDT documentation. Retention current is ≤4000 µA at military temperature extremes.

How is port arbitration handled in 7006S55JI8, and what role does the M/S pin play?

The 7006S55JI8 uses hardware-based port arbitration via the BUSY flag and M/S pin. When M/S = H, the device operates as Master: BUSYL/BUSYR become outputs that assert during address contention. When M/S = L, it operates as Slave: BUSYL/BUSYR become inputs, allowing external master to control access. This enables scalable multi-device configurations without external arbitration logic - a core design feature of the 7006S55JI8.

Can 7006S55JI8 perform simultaneous read operations from both ports to the same memory address?

Yes, the 7006S55JI8 features true dual-port memory cells that allow simultaneous reads from both ports to the exact same memory address without conflict or timing penalty. This capability is explicitly stated in the "Features" section and confirmed in Truth Table I. No BUSY assertion occurs during concurrent reads, and output data is valid per respective port's timing (tAA, tAOE), making the 7006S55JI8 ideal for mirrored data access in redundancy systems.

What package type and pin count does 7006S55JI8 use, and are all VCC/GND pins required?

The 7006S55JI8 uses a 68-pin ceramic PGA (GU68) package. Per datasheet Note 1 and 2, all 12 VCC pins must be connected to the 5 V supply and all 12 GND pins must be connected to ground - no exceptions. This distributed power/ground scheme minimizes simultaneous switching noise and ensures stable operation at 55 ns timing. Decoupling capacitors (0.1 µF ceramic) are required at each VCC–GND pair per layout guidelines.