Renesas 7007L35G

Overview

IDT7007L35G from IDT (now Renesas) is a high-speed 32K × 8 dual-port static RAM with true independent left/right ports, 35 ns read cycle time (tRC), industrial temperature range (–40°C to +85°C), and 5 V ±10% single-supply operation. It enables simultaneous asynchronous access to the same memory location and supports master/slave cascading for 16-bit+ bus expansion in real-time inter-processor communication systems.

For engineers reviewing the IDT7007L35G datasheet, IDT7007L35G pinout, IDT7007L35G application, or IDT7007L35G equivalent, key selection criteria include BUSY arbitration timing (tBDD ≤ 35 ns), semaphore flag support (8 flags via A0–A2), interrupt mailbox addressing (7FFE/7FFF), and dual-port power-down control via CE pins - all critical for deterministic multi-core shared-memory designs.

Technical Context

The IDT7007L35G implements fully asynchronous dual-port architecture with separate address, data, and control buses per port (left: A0L–A14L, I/O0L–I/O7L; right: A0R–A14R, I/O0R–I/O7R). On-chip arbitration logic resolves contention using BUSY flag signaling (push-pull, non-tri-stated) and M/S select for master/slave configuration.

It integrates full hardware semaphore support (8 flags, accessed via SEM = VIL, CE = VIH) and interrupt generation (INTL/INTR asserted on writes to 7FFE/7FFF), both operating independently per port without external logic. All timing parameters - including tAA (≤35 ns), tACE (≤35 ns), and tAOE (≤20 ns) - are specified over industrial temperature and 5 V ±10% supply.

Key Specifications

Pinout & Package

Package: 80-pin thin quad flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, lead pitch 0.5 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-35AXC and R1EX24032AS0A, the IDT7007L35G uniquely delivers 5 V operation, integrated BUSY arbitration, hardware semaphores, and interrupt mailboxes in a single 80-pin TQFP - making it the only drop-in solution for deterministic, low-latency dual-CPU shared memory in industrial and avionics control.

Availability

IDT7007L35G is available at Aetrix Electronics and suitable for industrial PLC communication, real-time motor control, avionics data concentrators, and medical imaging subsystems requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for IDT7007L35G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for industrial, automotive, and communications markets.

The IDT7007L35G belongs to Renesas' legacy high-speed dual-port SRAM product line, engineered specifically for deterministic inter-processor communication in real-time embedded systems where hardware arbitration, low-latency access, and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT7007L35G?

The IDT7007L35G does not operate on a clock signal - it is an asynchronous SRAM. Its speed is defined by timing parameters: read cycle time (tRC) is 35 ns max, meaning it supports sustained random access at up to ~28.6 MHz effective rate. Address access time (tAA) is also 35 ns max, ensuring deterministic latency without clock domain constraints. This makes IDT7007L35G ideal for systems with mismatched or unrelated processor clocks.

Does the IDT7007L35G support true simultaneous read operations from both ports to the same memory address?

Yes, the IDT7007L35G features true dual-ported memory cells that allow concurrent reads from both left and right ports to identical addresses without contention or delay. This capability is explicitly confirmed in the datasheet's "Features" section and functional block diagram. The IDT7007L35G maintains full 35 ns tRC performance on both ports simultaneously - no arbitration or penalty applies to same-address reads.

How is semaphore functionality implemented in the IDT7007L35G, and what address range does it use?

Semaphore functionality in the IDT7007L35G is implemented via eight dedicated hardware flags accessed exclusively through A0–A2 address lines while SEM = VIL and CE = VIH (per Truth Table II). These flags reside outside the main 32K × 8 memory array and are written via I/O0 (data bit 0) and read across all I/O0–I/O7. The IDT7007L35G does not use any main memory address for semaphores - they occupy a separate internal register space mapped solely by A0–A2.

What is the role of the M/S pin on the IDT7007L35G, and how does it affect BUSY signal behavior?

The M/S (Master/Slave) pin configures arbitration topology: when HIGH, the IDT7007L35G operates as MASTER - BUSYL and BUSYR become push-pull outputs asserting busy state during contention; when LOW, it operates as SLAVE - BUSYL and BUSYR become inputs that inhibit local writes when driven LOW by a MASTER device. This enables hierarchical multi-device shared memory without external logic, and is fundamental to the IDT7007L35G's cascading capability for 16-bit+ word systems.

Can the IDT7007L35G be used in a single-port configuration, and how is power consumption affected?

Yes, the IDT7007L35G supports single-port operation: disable one port by holding its CE pin HIGH, enabling four standby modes. With both ports disabled (ISB3), typical current drops to 0.2 mA; with only one port active and the other in TTL-level standby (ISB2), current is 95 mA (typ.) at 35 ns timing. This selective port gating - controlled entirely by CE signals - allows dynamic power scaling in systems where memory bandwidth demand varies across operational modes, directly leveraging the IDT7007L35G's integrated power-down architecture.