Renesas 7007S35PF

Overview

7007S35PF from IDT (Integrated Device Technology) is a high-speed 32K × 8 dual-port static RAM with true independent left/right ports, 35 ns maximum read cycle time, TTL-compatible 5 V ±10% operation, and integrated semaphore/arbiter logic for inter-processor communication in real-time embedded systems.

For engineers reviewing the 7007S35PF datasheet, 7007S35PF pinout, 7007S35PF application, or 7007S35PF equivalent, this device supports simultaneous asynchronous access to shared memory, hardware-based port arbitration, BUSY/INT flag signaling, and master/slave cascading for 16-bit+ data bus expansion - critical for industrial control, telecom switching, and DSP co-processing architectures.

Technical Context

The 7007S35PF implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port (A0L–A14L/I/O0L–I/O7L and A0R–A14R/I/O0R–I/O7R), enabling concurrent reads/writes without internal contention when accessing different addresses. Its on-chip arbitration logic uses BUSY flags (push-pull, not open-drain) and M/S select to coordinate access during address collisions.

It integrates dedicated semaphore registers (8 flags, addressed via A0–A2) accessible via CE=VIH/SEM=VIL mode, and interrupt flags (INTL/INTR) triggered by writes to fixed mailbox addresses (7FFE_H/7FFF_H). Power management includes four standby current modes (ISB1–ISB4), with full CMOS-level standby drawing as low as 0.2 mA.

Key Specifications

Pinout & Package

7007S35PF is packaged in an 80-pin thin quad flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, with exposed thermal pad (not electrically connected). All VCC pins require local decoupling; all GND pins must be solidly tied to ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-35AXC and IDT70V27L25PFGI, the 7007S35PF uniquely retains 5 V TTL compatibility, integrated M/S cascading, and industrial temperature rating - making it irreplaceable in brownfield 5 V control systems requiring expandable dual-port memory.

Availability

7007S35PF is available at Aetrix Electronics and suitable for industrial PLC controllers, telecom line cards, DSP co-processor interfaces, and avionics data concentrators requiring stable component supply across extended product lifecycles.

Supply support for 7007S35PF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) was a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance silicon solutions before its acquisition by Renesas Electronics in 2019.

The 7007S35PF belongs to IDT's legacy dual-port SRAM product line, engineered specifically for deterministic inter-processor communication in real-time embedded systems where hardware arbitration, mailbox messaging, and 5 V interoperability are mandatory.

FAQ

What is the maximum operating temperature range for the 7007S35PF?

The 7007S35PF is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the Absolute Maximum Ratings table and DC Operating Conditions section of the official datasheet, and applies across all speed grades including the 35 ns variant. The device maintains full functionality and timing compliance within this range without derating.

Does the 7007S35PF support true simultaneous read operations on both ports?

Yes, the 7007S35PF supports true simultaneous reads from both ports to the same or different memory locations. Its dual-port SRAM cell architecture enables concurrent access without internal contention or arbitration delay, as explicitly stated in the Features section: "True Dual-Ported memory cells which allow simultaneous reads of the same memory location." This behavior is fundamental to its design and verified in functional block diagrams and timing waveforms.

How does the M/S pin affect BUSY signal behavior in the 7007S35PF?

In the 7007S35PF, the M/S pin configures BUSY pin functionality: when M/S = HIGH, BUSYL and BUSYR operate as push-pull outputs indicating port contention; when M/S = LOW, they become inputs that inhibit writes on the respective port. This is documented in the Pin Names table and Truth Table IV, and enables master/slave daisy-chaining for wider data bus implementations without external logic.

What is the standby current consumption of the 7007S35PF in full CMOS-level shutdown mode?

The 7007S35PF draws 0.2 mA typical (max 5 mA) in ISB3 mode - its full standby state where both ports are disabled with CMOS-level inputs (CE > VCC − 0.2 V, all inputs at rail). This value is specified in Table 9 (DC Electrical Characteristics) for the 7007X35 military/industrial grade, and reflects actual measured performance under defined test conditions.

Can the 7007S35PF be used as a standalone 32K × 8 memory without master/slave configuration?

Yes, the 7007S35PF operates fully as a standalone 32K × 8 dual-port SRAM with independent left and right ports. The M/S pin defaults to MASTER mode (BUSY outputs) when unconnected or pulled high, and no external slave devices are required. Its functional description confirms it is "designed to be used as a stand-alone 256K-bit Dual-Port RAM," and all timing, pinout, and feature documentation assumes single-device operation unless cascading is explicitly invoked.