Renesas 7024S35GB

Overview

7024S35GB from IDT is a high-speed 4K × 16 true dual-port static RAM with independent left/right ports, 35 ns max read cycle time (commercial grade), TTL-compatible 5V ±10% supply, and on-chip semaphore/arbiration logic - enabling simultaneous asynchronous access in real-time inter-processor communication systems.

For engineers reviewing the 7024S35GB datasheet, 7024S35GB pinout, 7024S35GB application, or 7024S35GB equivalent, key selection criteria include bus arbitration timing (tAPS = 5 ns), BUSY flag response (tBAA ≤ 20 ns), dual-byte control (UBL/LBL), battery-retention capability (2V, 100–4000 µA), and 100-pin TQFP packaging for high-density PCB layouts.

Technical Context

The 7024S35GB implements full hardware port arbitration with Master/Slave select (M/S) to coordinate concurrent access across two independent address/data/control interfaces. Its on-chip semaphore logic supports eight shared flags addressed via A0–A2, accessed using dedicated SEM/UB/LB controls without external logic.

It operates fully asynchronously per port: reads and writes may occur simultaneously on left and right ports, including true concurrent reads of the same memory location. BUSY signaling enforces deterministic conflict resolution when both ports target identical addresses, with tBDD ≤ 35 ns ensuring valid data delivery after arbitration release.

Key Specifications

Pinout & Package

7024S35GB is packaged in a 100-pin TQFP (PNG100) with 0.5 mm pitch, 14 mm × 14 mm body, and 1.4 mm height. Pin functions are symmetrically distributed for left (L) and right (R) ports, supporting bidirectional I/O, separate byte enables, and dedicated arbitration signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35JC and AS7C34096B-35TIN, the 7024S35GB uniquely delivers 5V-native operation with integrated hardware semaphore and BUSY arbitration - reducing BOM count and eliminating timing-critical external logic in real-time embedded systems.

Availability

7024S35GB is available at Aetrix Electronics and suitable for industrial automation, avionics data fusion, and telecom line card designs requiring stable component supply, long-term lifecycle assurance, and guaranteed commercial-grade temperature performance.

Supply support for 7024S35GB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, and RF solutions, now part of Renesas Electronics.

The 7024S35GB belongs to IDT's legacy high-speed dual-port SRAM product line, engineered for deterministic inter-processor communication in real-time control and signal processing systems.

FAQ

What is the maximum operating frequency supported by the 7024S35GB?

The 7024S35GB does not operate on a clock signal - it is a fully asynchronous static RAM. Its speed is defined by timing parameters: maximum read cycle time (tRC) is 35 ns, meaning it supports effective throughput up to ~28.6 MHz in pipelined read operations. Write cycle time (tWC) is also 35 ns, enabling matched read/write bandwidth. These values are guaranteed across 0°C to +70°C.

Does the 7024S35GB support battery backup, and what voltage range maintains data retention?

Yes, the 7024S35GB ('L' suffix variant) supports battery backup data retention down to 2.0 V (VDR min), with ICCDR ranging from 100 µA to 4000 µA depending on temperature grade. The 7024S35GB specifically retains data at 2V with typical current draw of 100 µA (military/industrial) or 100 µA (commercial), as specified in Table 10 of the datasheet.

How does the Master/Slave (M/S) pin affect BUSY signal behavior in the 7024S35GB?

When M/S = HIGH, the 7024S35GB operates as Master: BUSYL and BUSYR become outputs that assert during port contention. When M/S = LOW, it operates as Slave: BUSYL and BUSYR become inputs used to block writes on the local port. This configuration enables daisy-chained arbitration in multi-device systems without external logic - a core feature confirmed in Truth Table I and Figure 14.

Can the 7024S35GB perform simultaneous reads and writes to different addresses on left and right ports?

Yes - the 7024S35GB supports fully independent, asynchronous access on both ports. Reads and writes to *different* addresses may occur concurrently with no timing penalty. Even reads to the *same* address on both ports are permitted and return valid data simultaneously, as stated in the "True Dual-Ported memory cells" feature. Contention only triggers BUSY arbitration when both ports attempt a write to the identical location.

What package type and pin count does the 7024S35GB use, and is it RoHS compliant?

The 7024S35GB uses a 100-pin Thin Quad Flatpack (TQFP) package (package code PNG100), measuring 14 mm × 14 mm × 1.4 mm. Per IDT documentation, "Green parts available" indicates lead-free, RoHS-compliant construction. The 'G' in 7024S35GB explicitly denotes green (Pb-free) packaging, and the 'B' suffix confirms tape-and-reel packaging for automated assembly.