Renesas 7025L25G

Overview

IDT7025L25G from Integrated Device Technology (IDT) is a high-speed 8K × 16-bit true dual-port static RAM with 25 ns maximum read cycle time, TTL-compatible 5V ±10% operation, and 1 mW typical standby power consumption. It supports simultaneous independent access from left and right ports, on-chip semaphore arbitration, and battery backup data retention down to 2V - used in real-time embedded systems requiring deterministic memory coherency between two processors or DMA engines.

For engineers reviewing the IDT7025L25G datasheet, IDT7025L25G pinout, IDT7025L25G application, or IDT7025L25G equivalent, key selection criteria include its 25 ns access timing, dual-port arbitration logic, M/S master/slave cascading capability for 32-bit+ bus expansion, and industrial temperature range (–40°C to +85°C) compliance.

Technical Context

The IDT7025L25G implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port, enabling concurrent read/write operations to any memory location without external logic. Its on-chip arbitration uses BUSY flag signaling and hardware semaphore registers (8 flags, addressed via A0–A2) to resolve contention between ports.

It supports two operational modes: standalone 128K-bit dual-port RAM or master/slave configuration for wider data buses - where M/S = H configures BUSY as output (master), and M/S = L configures BUSY as input (slave). Battery retention mode activates at VCC = 2V with ICCDR ≤ 4000 µA across all temperature grades.

Key Specifications

Pinout & Package

Package: 84-pin Plastic Leaded Chip Carrier (PLCC), body size ≈ 1.12 in × 1.12 in × 0.16 in, lead pitch 0.05 in, RoHS-compliant green variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C136-25JC and AS7C38097A-25PC, the IDT7025L25G delivers integrated hardware arbitration, true simultaneous access, and seamless master/slave expansion - reducing BOM count, PCB area, and firmware overhead in real-time deterministic systems.

Availability

IDT7025L25G is available at Aetrix Electronics and suitable for motor control systems, digital signal processor interfaces, redundant communication controllers, and industrial PLC I/O mapping requiring stable component supply across extended product lifecycles.

Supply support for IDT7025L25G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions before its acquisition by Renesas Electronics in 2019.

The IDT7025L25G belongs to IDT's high-speed dual-port SRAM product line, designed specifically for real-time embedded systems demanding deterministic inter-processor communication, low-latency shared memory, and industrial-grade reliability.

FAQ

What is the maximum operating frequency supported by the IDT7025L25G?

The IDT7025L25G supports a maximum read cycle time (tRC) of 25 ns, corresponding to a theoretical maximum sustained throughput of 40 MHz per port. This timing is guaranteed over the full industrial temperature range (–40°C to +85°C) and 5.0 V ±10% supply voltage. The device operates asynchronously - no clock signal is required - and actual system bandwidth depends on bus protocol overhead and external controller timing margins.

Does the IDT7025L25G support battery backup operation, and what is the minimum retention voltage?

Yes, the IDT7025L25G supports battery backup operation with guaranteed data retention at VCC = 2.0 V minimum. In this mode, the device draws ≤ 4000 µA (typical 100 µA) across all temperature grades, enabling long-term memory hold during main power loss. The L-version (low-power) achieves this with optimized standby current - ISB3 = 0.2 mA typical - making it suitable for systems with coin-cell or supercapacitor backup.

How does the M/S pin configure master versus slave operation in the IDT7025L25G?

The M/S pin on the IDT7025L25G determines BUSY signal direction: when M/S = HIGH, the device operates as a master and drives BUSY as an output to indicate port contention; when M/S = LOW, it operates as a slave and accepts BUSY as an input to stall writes during arbitration. This enables daisy-chained configurations for 32-bit or wider memory systems without external logic - the master asserts BUSY to block slave writes during same-address access.

Can the IDT7025L25G perform simultaneous read operations from both ports to the same memory address?

Yes, the IDT7025L25G supports true simultaneous reads from both ports to the same memory address without contention or performance penalty. Its dual-port cell architecture allows independent, asynchronous access - both ports output valid data within tAA ≤ 25 ns after address assertion. No BUSY assertion or arbitration delay occurs during same-address reads, distinguishing it from pseudo-dual-port or pipelined SRAMs.

What are the key differences between the 'S' and 'L' versions of the IDT7025 family, such as IDT7025L25G versus IDT7025S25G?

The 'L' version (e.g., IDT7025L25G) features lower standby power: 1 mW typical (ISB3) versus 5 mW for the 'S' version (IDT7025S25G), achieved through optimized CMOS design. Both share identical speed grade (25 ns), pinout, and functionality. The 'L' variant also specifies tighter data retention current (≤ 4000 µA vs. ≤ 1500 µA for commercial 'S') and is qualified for industrial temperature range - making IDT7025L25G preferred for battery-sensitive or extended-temperature applications.