Renesas 7026L25GB

Overview

IDT7026L25GB from IDT (Integrated Device Technology) is a high-speed 16K × 16 true dual-port static RAM with independent left/right ports, 25 ns maximum access time, 1 mA typical standby current, and industrial temperature range (−40°C to +85°C). It enables simultaneous asynchronous read/write access to the same memory location and supports master/slave cascading for 32-bit+ bus expansion in real-time embedded control systems.

For engineers reviewing the IDT7026L25GB datasheet, IDT7026L25GB pinout, IDT7026L25GB application, or IDT7026L25GB equivalent, key selection considerations include BUSY arbitration timing (tBDD ≤ 30 ns), semaphore flag support (8 flags via A0–A2), byte-selectable I/O (UBL/LBL), TTL-compatible 5V ±10% operation, and 84-pin PLCC packaging for legacy industrial PCB layouts.

Technical Context

The IDT7026L25GB implements fully asynchronous dual-port architecture with separate address, control, and data buses per port-no shared clock required. Its on-chip arbitration logic resolves contention via hardware BUSY signaling, where M/S = HIGH configures push-pull BUSY outputs and M/S = LOW converts BUSY pins to write-inhibit inputs.

It integrates full semaphore logic: eight dedicated flags accessible via I/O0 (write) and all I/Os (read), addressed by A0–A2, with tSWRD = 5 ns write-to-read latency and tSPS = 5 ns contention window. Power management uses CE-driven automatic power-down, achieving 1 mA typical standby current with CMOS-level inputs.

Key Specifications

Pinout & Package

Package: 84-pin Plastic Leaded Chip Carrier (PLCC), body size ≈ 1.15 in × 1.15 in × 0.17 in, lead pitch 0.05 in, RoHS-compliant green variant available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-25AXC and R1EX24016AS0C-25, the IDT7026L25GB uniquely delivers integrated semaphore logic, push-pull BUSY outputs, and M/S-configurable arbitration in the same 84-pin PLCC footprint - reducing design risk in safety-critical dual-processor architectures.

Availability

IDT7026L25GB is available at Aetrix Electronics and suitable for industrial motion controllers, avionics data concentrators, programmable logic controllers, and digital signal processor interfaces requiring stable component supply across extended temperature ranges.

Supply support for IDT7026L25GB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.

The IDT7026L25GB belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic real-time data exchange between heterogeneous processors in industrial automation, aerospace, and test equipment.

FAQ

What is the maximum operating temperature range for the IDT7026L25GB?

The IDT7026L25GB is rated for industrial temperature operation from −40°C to +85°C. This specification is validated per the manufacturer's datasheet (DSC 2939/17, August 2019) and applies to all speed grades including the 25 ns version. It does not support military-grade −55°C to +125°C operation - that range is reserved for the IDT7026S variant with 'S' suffix.

Does the IDT7026L25GB support true simultaneous read/write to the same memory address?

Yes, the IDT7026L25GB implements true dual-port memory cells that permit independent, asynchronous read and write operations to the exact same memory location from left and right ports. The on-chip BUSY arbitration logic detects contention and asserts BUSYL/BUSYR to stall one port, ensuring data integrity without external circuitry - a core feature confirmed in the functional block diagram and truth tables of the datasheet.

How does the M/S pin affect BUSY pin functionality on the IDT7026L25GB?

When M/S = HIGH, BUSYL and BUSYR operate as push-pull outputs indicating port contention; when M/S = LOW, they become write-inhibit inputs - allowing external arbitration logic to control write access. This dual-mode behavior is explicitly defined in Note 1 of the Pin Configurations section and Truth Table I, and is fundamental to master/slave cascading configurations described in the device description.

What is the standby current consumption of the IDT7026L25GB under full CMOS-level input conditions?

Under full standby conditions - both ports disabled (CEL = CER > VCC − 0.2 V), all inputs at CMOS levels (VIN > VCC − 0.2 V or VIN < 0.2 V), and SEMR/SEML > VCC − 0.2 V - the IDT7026L25GB consumes 0.2 mA typical (5 mA max) ISB3 current, as specified in Table 10 of the datasheet. This ultra-low value enables energy-efficient hold modes in battery-backed systems.

Can the IDT7026L25GB be used without external pull-up resistors on BUSY pins?

Yes - the BUSYL and BUSYR outputs are push-pull (not open-drain), so no external pull-up resistors are required. This is explicitly stated in Note 2 of the Functional Block Diagram ("BUSY outputs are non-tri-stated push-pull") and confirmed in the Absolute Maximum Ratings table, which lists IOUT = ±50 mA - consistent with active drive capability.