Renesas 7026L25J8

Overview

IDT7026L25J8 from Integrated Device Technology (IDT) is a high-speed 16K × 16 true dual-port static RAM with independent left/right ports, 25 ns maximum access time, 1 mW typical standby power, and TTL-compatible 5 V ±10% operation. It enables simultaneous asynchronous read/write to the same memory location and supports master/slave cascading for 32-bit+ bus expansion in real-time embedded control systems.

For engineers reviewing the IDT7026L25J8 datasheet, IDT7026L25J8 pinout, IDT7026L25J8 application, or IDT7026L25J8 equivalent, key selection considerations include BUSY arbitration timing (tBAA ≤ 20 ns), semaphore flag support (8 flags via A0–A2), byte-selectable I/O (UBL/LBL), industrial temperature range (−40°C to +85°C), and 84-pin PLCC package compatibility.

Technical Context

The IDT7026L25J8 implements fully asynchronous dual-port architecture with separate address, control, and bidirectional I/O buses per port. Its on-chip arbitration logic resolves contention via push-pull BUSY outputs (BUSYL/BUSYR) when both ports access identical addresses, with priority determined by tAPS (≥5 ns setup). Semaphore signaling uses dedicated SEM pins and A0–A2 addressing to manage eight shared resource flags.

Power management is controlled per-port via CE (chip enable): CE = VIH places the port in ultra-low-power standby (1 mW typ.), while CE = VIL enables full-speed operation. The device supports both R/W-controlled and CE/UB/LB-controlled write cycles, with tEW (20 ns max), tWP (20 ns min), and tDW (15 ns min) defined for 25 ns speed grade.

Key Specifications

Pinout & Package

Package: 84-pin Plastic Leaded Chip Carrier (PLCC), body size ≈ 1.15 in × 1.15 in × 0.17 in, lead finish SnPb, RoHS-compliant green variant available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C136-25JC and AS7C316000B-25JC, the IDT7026L25J8 uniquely integrates push-pull BUSY outputs and on-chip semaphore registers-reducing BOM count by up to 7 discrete components and enabling deterministic inter-processor synchronization without firmware intervention.

Availability

IDT7026L25J8 is available at Aetrix Electronics and suitable for real-time industrial PLCs, avionics data concentrators, medical imaging modules, and digital signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for IDT7026L25J8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs, acquired by Renesas Electronics in 2019.

The IDT7026L25J8 belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic inter-processor communication in safety-critical industrial, aerospace, and medical systems where hardware-enforced memory coherency is mandatory.

FAQ

What is the operating temperature range of the IDT7026L25J8?

The IDT7026L25J8 is rated for industrial temperature operation from −40°C to +85°C. This specification is validated per the manufacturer's characterization and testing protocol, and applies to all DC and AC electrical parameters listed in the official datasheet revision DSC 2939/17. The part does not support military or extended commercial ranges.

Does the IDT7026L25J8 support true simultaneous read/write to the same memory address?

Yes, the IDT7026L25J8 implements true dual-port SRAM cells that allow concurrent read and write operations to the identical memory location. When contention occurs, on-chip arbitration asserts BUSYL or BUSYR to stall the lower-priority port, ensuring data integrity without external logic. This behavior is confirmed in the functional block diagram and Truth Table I of the IDT7026L25J8 datasheet.

How does the M/S pin affect BUSY functionality on the IDT7026L25J8?

When M/S = H, BUSYL and BUSYR operate as push-pull outputs indicating address contention. When M/S = L, both become inputs that internally inhibit writes-enabling slave-mode operation in cascaded master/slave configurations. This dual-mode behavior is explicitly defined in Note 1 of the Pin Configurations section and verified in the BUSY TIMING tables of the IDT7026L25J8 datasheet.

What is the standby current consumption of the IDT7026L25J8?

The IDT7026L25J8 draws 1 mW typical standby power (ISB3), corresponding to approximately 200 µA at 5 V under full CMOS-level input conditions (CE = VIH, all inputs at rail). This value is measured per Table 10 of the datasheet and reflects the "Full Standby Current (Both Ports)" condition with SEM = VIH and f = 0.

Can the IDT7026L25J8 be used in a 32-bit data bus configuration?

Yes, the IDT7026L25J8 supports 32-bit expansion via master/slave cascading using the M/S pin and BUSY interconnection. Two devices can be configured-one as master (M/S = H), one as slave (M/S = L)-with BUSY outputs wired to BUSY inputs to coordinate access. This capability is documented in the "IDT MASTER/SLAVE Dual-Port RAM approach" section of the IDT7026L25J8 datasheet.