Renesas 7026L35GB

Overview

IDT7026L35GB from IDT (Integrated Device Technology) is a high-speed 16K × 16 true dual-port static RAM with independent left/right ports, 35 ns maximum read cycle time, 1 mA typical standby current, and TTL-compatible 5 V ±10% operation. It enables simultaneous asynchronous access to the same memory location and supports master/slave cascading for 32-bit+ systems in industrial temperature environments (–40°C to +85°C).

For engineers reviewing the IDT7026L35GB datasheet, IDT7026L35GB pinout, IDT7026L35GB application, or IDT7026L35GB equivalent, key selection considerations include BUSY arbitration timing (tBDD ≤ 35 ns), on-chip semaphore support (8 flags, A0–A2 addressed), byte-select control (UBL/LBL), and 84-pin PLCC packaging with verified pin mapping.

Technical Context

The IDT7026L35GB implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port. Its on-chip arbitration logic resolves contention via BUSY flag assertion when both ports access identical addresses - with tBAA ≤ 20 ns (M/S = VIH) and tWB = 0 ns (M/S = VIL).

It integrates full hardware semaphore signaling: eight dedicated flags accessed via CE = VIH/SEM = VIL, A0–A2 addressing, and I/O0 write/data broadcast across all 16 I/O lines. Power management uses per-port chip enable (CEL/CER) to achieve 1 mA typical standby current in full CMOS-level shutdown mode (ISB3).

Key Specifications

Pinout & Package

Package: 84-pin PLCC (Plastic Leaded Chip Carrier), body size ≈ 1.15 in × 1.15 in × 0.17 in, lead pitch 0.05 in, RoHS-compliant green variant available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-35AC and R1EX24016AS0C-35, the IDT7026L35GB uniquely delivers integrated semaphore signaling, industrial temperature qualification, and configurable BUSY arbitration in the same 84-pin PLCC footprint - reducing BOM count and enabling deterministic real-time inter-processor communication.

Availability

IDT7026L35GB is available at Aetrix Electronics and suitable for industrial motion control, avionics data buffering, medical imaging subsystems, test & measurement equipment, and real-time embedded systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT7026L35GB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal processing solutions, now part of Renesas Electronics since 2019.

The IDT7026L35GB belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic real-time inter-processor communication in industrial, aerospace, and medical systems requiring hardware-enforced memory coherency.

FAQ

What is the maximum operating frequency supported by the IDT7026L35GB?

The IDT7026L35GB supports a maximum read cycle time (tRC) of 35 ns, corresponding to a theoretical maximum sustained read rate of 28.6 MHz. This is not a clocked interface - it is fully asynchronous, so actual system throughput depends on address setup, enable timing, and bus turnaround. The 35 ns rating applies across the full industrial temperature range (–40°C to +85°C) under 5.0 V ±10% supply conditions.

Does the IDT7026L35GB support true simultaneous read-write to the same memory address?

Yes, the IDT7026L35GB implements true dual-port SRAM cells that allow simultaneous access to the same memory location. However, when both ports attempt a write to the same address, the on-chip BUSY arbitration logic asserts BUSYL or BUSYR to stall one port. Reads remain unaffected - a read and write to the same address can proceed concurrently without data corruption.

How does the semaphore functionality work on the IDT7026L35GB?

The IDT7026L35GB provides eight hardware semaphore flags accessed via CE = VIH and SEM = VIL. Address lines A0–A2 select the flag; I/O0 writes the value (0 = acquire, 1 = release); all 16 I/O lines (I/O0–I/O15) read the current flag state. This enables lock-free inter-processor synchronization without software polling or external logic - a core feature distinguishing it from standard SRAMs.

Can the IDT7026L35GB be used in a master/slave configuration for 32-bit data paths?

Yes, the IDT7026L35GB supports master/slave cascading using the M/S pin. When configured as master (M/S = HIGH), BUSYL/BUSYR are outputs; as slave (M/S = LOW), they become inputs. Multiple devices can be chained to form wider data words (e.g., two 16-bit parts → 32-bit bus), with BUSY signals coordinated across the array to maintain atomicity during multi-word accesses.

What is the power consumption profile of the IDT7026L35GB in standby mode?

In full standby (ISB3 mode), with both CEL and CER held high and all inputs at valid CMOS levels (V_IN < 0.2 V or > V_CC – 0.2 V), the IDT7026L35GB draws only 0.2 mA typical - significantly lower than the 5 mW typical of the IDT7026S variant. This makes it ideal for battery-backed or energy-constrained industrial systems requiring persistent memory retention with minimal quiescent draw.