Renesas 7027S25G

Overview

IDT7027S25G from Integrated Device Technology (IDT) is a high-speed 32K × 16 dual-port static RAM with true dual-ported memory cells enabling simultaneous access to the same address by both ports, 25 ns maximum access time (industrial temperature range), TTL-compatible 5V ±10% supply, and on-chip semaphore/arbiter logic for inter-port synchronization - used in real-time embedded systems requiring deterministic shared-memory communication between two independent processors or bus masters.

For engineers reviewing the IDT7027S25G datasheet, IDT7027S25G pinout, IDT7027S25G application, or IDT7027S25G equivalent, key selection considerations include its 100-pin TQFP package, master/slave cascading capability via M/S pin, BUSY flag arbitration timing (tBAA ≤ 20 ns), and industrial-grade –40°C to +85°C operation with dual chip enables for depth expansion.

Technical Context

The IDT7027S25G implements fully asynchronous dual-port architecture with independent left/right address, control, and I/O buses - each port supports read/write cycles without external synchronization. Its on-chip arbitration logic resolves contention using either address-match or chip-enable timing, with BUSY outputs asserted when conflicting accesses occur to identical addresses.

It integrates full hardware semaphore support across eight flags (addressed by A0–A2), where writes to I/O0 set/clear tokens readable across all 16 I/O lines. The device uses CMOS process technology and features separate upper-byte (UB/UBR) and lower-byte (LB/LBR) controls, enabling flexible 8-bit or 16-bit bus interfacing without glue logic.

Key Specifications

Pinout & Package

The IDT7027S25G is housed in a 100-pin TQFP package with exposed thermal pad (not electrically connected). Pin functions are strictly divided into left-port (L) and right-port (R) groups, plus shared control signals including M/S, INTL/INTR, and BUSYL/BUSYR.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-25AC and R1EX24032AS0A, the IDT7027S25G delivers unique on-chip arbitration, semaphore, and master/slave functionality in a drop-in 5V industrial package - eliminating external components and reducing firmware synchronization burden while maintaining identical timing and pinout compatibility.

Availability

IDT7027S25G is available at Aetrix Electronics and suitable for industrial automation, telecommunications infrastructure, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for IDT7027S25G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning solutions before its acquisition by Renesas Electronics in 2019.

The IDT7027S25G belongs to IDT's high-speed dual-port SRAM product line, engineered specifically for deterministic, low-latency inter-processor communication in real-time embedded systems where hardware arbitration and semaphore support reduce software complexity and improve reliability.

FAQ

What is the operating temperature range specified for the IDT7027S25G?

The IDT7027S25G is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the "Recommended DC Operating Conditions" table (Table 6) and applies across all speed grades including the 25 ns version. The device maintains full functionality and timing compliance within this range without derating.

Does the IDT7027S25G support true simultaneous read/write access to the same memory address?

Yes, the IDT7027S25G implements true dual-ported memory cells that permit simultaneous access to the same address location by both ports. When contention occurs, on-chip arbitration logic asserts the BUSY flag to inhibit the later-arriving write - ensuring data integrity without external intervention. This behavior is documented in the Functional Description and Truth Table V.

How does the M/S pin affect the function of BUSYL and BUSYR on the IDT7027S25G?

When M/S = VIH, the IDT7027S25G operates as a master: BUSYL and BUSYR become push-pull outputs asserting during address contention. When M/S = VIL, it operates as a slave: BUSYL and BUSYR become inputs that internally inhibit writes when driven low. This dual-mode behavior is explicitly defined in Note 1 of the Pin Configurations section and Figure 11 waveform.

Can the IDT7027S25G be used in a 32-bit or wider memory system? If so, how?

Yes, the IDT7027S25G supports 32-bit+ data bus expansion via its Master/Slave cascading architecture. Multiple devices are connected using the M/S pin: one configured as master (M/S = VIH) drives BUSY outputs, others as slaves (M/S = VIL) accept BUSY inputs. The datasheet confirms this enables "full-speed, error-free operation without additional discrete logic" for word widths beyond 16 bits.

What are the valid address ranges for interrupt mailbox functionality in the IDT7027S25G?

The IDT7027S25G uses fixed addresses for interrupt mailbox operation: writing to address 7FFFh (hex) on the right port asserts INTR, and writing to 7FFEh on the left port asserts INTL. These addresses are reserved for interrupt signaling per Truth Table IV and the Functional Description section - they remain accessible as general SRAM locations if interrupts are disabled.