Renesas 709289L9PF8

Overview

IDT709289L9PF8 from Integrated Device Technology is a high-speed, synchronous, pipelined dual-port static RAM with 64K × 16-bit organization (1 Mbit), true dual-ported memory cells enabling simultaneous read/write access to the same address, 9 ns max clock-to-data access in pipelined mode, industrial temperature range (–40°C to +85°C), and TTL-compatible 5V ±10% single-supply operation. It serves as shared memory buffer in real-time DSP co-processing systems requiring deterministic latency between two independent bus masters.

For engineers reviewing the IDT709289L9PF8 datasheet, IDT709289L9PF8 pinout, IDT709289L9PF8 application, or IDT709289L9PF8 equivalent, key selection criteria include pipelined vs. flow-through output timing, dual-chip-enable depth expansion capability, separate upper/lower byte controls for multiplexed bus compatibility, and industrial-grade reliability under concurrent port access.

Technical Context

This device implements fully synchronous dual-port architecture with registered address, data, and control inputs on both left and right ports-each clocked on the rising edge of CLKL/CLKR. It supports two distinct output modes: pipelined (FT/PIPE = VIH, 7.5 ns tCD2 typ., 15 ns tCYC2 max) and flow-through (FT/PIPE = VIL, 20 ns tCD1 max, 25 ns tCYC1 max), selected independently per port via FT/PIPEL and FT/PIPER pins.

Internal address counters with CNTEN/CNTRST control enable burst sequential access without external address generation; ADS strobes load external addresses synchronously. Dual CE0/CE1 enables per port allow depth expansion without glue logic, while UBL/LBL and UBR/LBR provide byte-level write masking aligned with 16-bit data bus partitioning.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flatpack (TQFP), body size 14 mm × 14 mm × 1.4 mm, lead pitch 0.5 mm. All VCC pins require local decoupling; all GND pins must be connected to system ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous dual-port SRAM applications.

Compared with CY7C1362BV33-100AXC and IDT70V9289L9PF8, the IDT709289L9PF8 offers native 5V TTL compatibility and TQFP packaging for legacy system upgrades, while maintaining identical 64K×16 organization and pipelined timing-but requires higher supply voltage and delivers higher active power.

Availability

IDT709289L9PF8 is available at Aetrix Electronics and suitable for real-time DSP co-processing, redundant controller memory buffering, high-speed packet buffering, and video frame synchronization requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for IDT709289L9PF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF products for communications, computing, and industrial markets.

The IDT709289L product line delivers synchronous dual-port SRAMs optimized for deterministic, low-latency inter-processor communication in real-time embedded systems where concurrent access and industrial reliability are critical.

FAQ

What is the maximum operating frequency of the IDT709289L9PF8 in pipelined mode?

The IDT709289L9PF8 supports up to 83 MHz operation in pipelined output mode, derived from its 15 ns maximum clock cycle time (tCYC2). This is validated across the full industrial temperature range (–40°C to +85°C) and 5.0 V ±10% supply, with all timing parameters-including tCD2 (clock-to-data valid) at 9 ns max-guaranteed under these conditions. The IDT709289L9PF8 achieves this performance without external wait-state insertion.

Does the IDT709289L9PF8 support independent output mode selection for left and right ports?

Yes, the IDT709289L9PF8 provides independent output mode control via dedicated FT/PIPEL (left port) and FT/PIPER (right port) pins. Setting FT/PIPEL = VIH configures the left port for pipelined operation (1-cycle latency, faster max frequency), while FT/PIPER = VIL sets the right port to flow-through mode (combinatorial output, lower latency per access but slower max rate). This flexibility allows asymmetric timing optimization across subsystems sharing the IDT709289L9PF8.

How does the dual chip enable (CE0/CE1) scheme simplify depth expansion with the IDT709289L9PF8?

The IDT709289L9PF8 uses dual chip enables per port (CE0L/CE1L and CE0R/CE1R) to enable depth expansion without external decoding logic. For two-device expansion, CE0 of Device 1 connects to CE1 of Device 2 and vice versa, while shared control signals (CLK, ADS, etc.) fan out. This creates automatic bank selection: asserting CE0X = VIL and CE1X = VIH enables only that port, allowing seamless 128K×16 addressing. The IDT709289L9PF8 datasheet confirms this configuration eliminates glue logic in multi-bank systems.

Can the IDT709289L9PF8 perform byte-select writes, and how is it implemented?

Yes, the IDT709289L9PF8 supports independent upper- and lower-byte write enable via UBL/LBL (left port) and UBR/LBR (right port). When UBL = VIL and LBL = VIH, only I/O0L–I/O7L (lower byte) is written; when UBL = VIH and LBL = VIL, only I/O8L–I/O15L (upper byte) is written. Both low enables a full 16-bit write. This is implemented in hardware with no timing penalty-byte masking occurs transparently during the write cycle, preserving tCYC2 compliance. The IDT709289L9PF8 uses this for bus-matching with 8-bit peripherals.

What is the power consumption profile of the IDT709289L9PF8 in standby and active modes?

In active mode (both ports enabled, outputs driving), the IDT709289L9PF8 draws 250 mA typical ICC at 83 MHz (15 ns cycle), equating to ~1.25 W at 5 V. In full standby (CE0 and CE1 both inactive per port), ISB3 is 0.5 mA typical-just 2.5 mW. Partial standby (one port active) draws 175 mA typical. These values are measured per the datasheet's DC electrical characteristics table and reflect actual silicon behavior under industrial temperature conditions, not theoretical estimates. The IDT709289L9PF8 achieves this efficiency via CMOS process optimization and gated internal clock trees.