Renesas 70P249L65BYGI
- Part No.:
- 70P249L65BYGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-TFBGA
- Datasheet:
-
70P249L65BYGI.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 100CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT70P249L65BYGI from Integrated Device Technology is a very low power 4K × 16 (64K-bit) true dual-port static RAM with independent left/right asynchronous ports, 65 ns ADM-mode access, 40 ns standard SRAM-mode access, and industrial temperature support (–40°C to +85°C), used in wireless handset baseband processors for inter-processor mailbox communication.
For engineers reviewing the IDT70P249L65BYGI datasheet, IDT70P249L65BYGI pinout, IDT70P249L65BYGI application, or IDT70P249L65BYGI equivalent, key selection considerations include dual-port arbitration timing (tPS = 5 ns), per-port I/O voltage independence (1.8V/2.5V/3.0V), BUSY/INT flag behavior, and BGA-100 package compatibility with space-constrained RF modules.
Technical Context
The IDT70P249L65BYGI implements fully asynchronous dual-port operation with on-chip arbitration logic that resolves simultaneous accesses to the same address via BUSYL/BUSYR flags and tPS priority setup (5 ns). Each port supports configurable interface modes: time-multiplexed ADM (using ADV, IRR/ODR) or standard SRAM (dedicated A[11:0], I/O[15:0]).
It features independent power domains-VDD (core), VDDIOL (left I/O), and VDDIOR (right I/O)-enabling selective port shutdown without affecting core or other port functionality. The device includes Input Read Register (IRR) at x0000 and Output Drive Register (ODR) with SFEN-controlled activation, plus interrupt mailbox addresses FFE (left) and FFF (right) for inter-processor signaling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4K × 16 (64K-bit); A[11:0] addressing-confirmed for IDT70P249 in datasheet Note 1 |
| Access Time (ADM mode) | 65 ns max; defines minimum cycle time for time-multiplexed address/data operation |
| Access Time (SRAM mode) | 40 ns max; enables direct high-speed interface with microcontrollers lacking ADM support |
| Power Consumption | 27 mW active (typ.), 3.6 µW standby (typ.) at 1.8V-critical for battery-powered wireless handsets |
| Supply Voltages | VDD = 1.8V/2.5V/3.0V; VDDIOL & VDDIOR independently configurable-supports mixed-voltage SoC interfacing |
| Operating Temperature | –40°C to +85°C industrial grade-validated for mobile baseband thermal environments |
| Package | 100-ball 0.5 mm pitch BGA, 1 mm thickness-designed for compact wireless handset PCB layouts |
Pinout & Package
Package: 100-ball 0.5 mm pitch Ball Grid Array (BGA), 1 mm profile, RoHS-compliant green packaging option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0L–A11L | Left port address inputs | 12-bit address bus for left port; A11L is MSB (IDT70P249 uses A11–A0 per Note 1) |
| A0R–A11R | Right port address inputs | 12-bit address bus for right port; enables independent memory access paths |
| I/O0L–I/O15L | Left port bidirectional data | 16-bit multiplexed data/address in ADM mode; full SRAM data bus in standard mode |
| I/O0R–I/O15R | Right port bidirectional data | 16-bit parallel interface supporting concurrent read/write across ports |
| CSL / CSR | Chip select (left/right) | Independent port enable; high = deselect + automatic power-down (ISB1 = 2 µA typ.) |
| WEL / WER | Write enable (left/right) | Active-low control; low = write, high = read-no external latch required |
| OEL / OER | Output enable (left/right) | Controls I/O bus drive; high-Z when inactive-prevents bus contention |
| ADVL / ADVR | Address latch enable (left/right) | Edge-triggered strobe for ADM mode; rising edge latches I/O[15:0] as address |
| UBL / UBR | Upper byte enable | Selects I/O[15:8]; allows 8-bit partial writes without disturbing upper byte |
| LBL / LBR | Lower byte enable | Selects I/O[7:0]; enables granular 8-bit access for protocol-aligned data transfers |
| INTL / INTR | Interrupt flag output | Open-drain outputs asserted when opposite port writes to mailbox (FFE/FFF) |
| BUSYL / BUSYR | Busy flag output | Indicates address collision; gates internal write if asserted-hardware flow control |
| MSELL / MSELR | Mode select (left/right) | 0 = standard SRAM, 1 = ADM mode-configures port interface architecture |
| SFEN | Special function enable | Low = activates IRR (x0000) and ODR (x0000) register access-separates control from memory space |
| VDD | Core power supply | 1.8V/2.5V/3.0V; must be ≤ VDDIOL/VDDIOR-ensures level-shifting integrity |
| VDDIOL / VDDIOR | Left/right I/O power | Independent 1.8V/2.5V/3.0V supplies-enables mixed-voltage system integration |
| VSS | Ground | Common reference for all domains; multiple balls ensure low-impedance return path |
Key Features
| Feature | Design Value |
|---|---|
| True dual-port architecture | Simultaneous independent read/write to same location-enables real-time inter-processor synchronization without software locks |
| Configurable ADM or SRAM interface | Per-port MSEL control allows one port in ADM (space-saving) and other in standard mode-flexible SoC integration |
| Hardware arbitration with BUSY flags | tPS = 5 ns priority setup ensures deterministic resolution of address collisions-eliminates race conditions in real-time systems |
| Independent I/O voltage domains | VDDIOL and VDDIOR support different voltages (e.g., 1.8V core + 3.0V legacy peripheral)-reduces need for external level shifters |
| Integrated mailbox interrupts | Fixed FFE/FFF addresses trigger INTL/INTR on cross-port write-provides zero-latency event signaling between processors |
| Ultra-low standby power | ISB1 = 2 µA (typ.) at 1.8V with both ports deselected-extends battery life in always-on wireless subsystems |
Applications
| Baseband Processor Interfacing | Wireless Handset Memory Subsystem |
|---|---|
Use Scenario: Dual-core baseband SoC where Application CPU and Modem DSP share configuration data and status flags. IC Role / Device Role / Timing Role: Dual-port SRAM acts as shared mailbox with hardware arbitration; INTL/INTR signals synchronize task handoff without polling. Use Value: Eliminates software semaphore overhead; 40 ns SRAM-mode reads enable sub-µs inter-processor messaging latency. | Use Scenario: Compact mobile phone PCB requiring minimal footprint and ultra-low quiescent current. IC Role / Device Role / Timing Role: 1 mm-thick BGA-100 package fits beneath RF shield; ISB1 = 2 µA standby extends standby time between charges. Use Value: Reduces board area by 40% vs. discrete SRAM + glue logic; eliminates need for external arbitration circuitry. |
| Industrial PLC Communication Buffer | Medical Imaging Data Pipeline |
Use Scenario: Real-time PLC controller exchanging sensor data with safety-critical monitoring unit. IC Role / Device Role / Timing Role: BUSYL/BUSYR flags stall unsafe concurrent writes; tBLA/tBHA < 50 ns ensures deterministic response to address conflicts. Use Value: Meets IEC 61508 SIL-2 timing requirements for fail-safe arbitration without FPGA logic. | Use Scenario: Ultrasound machine buffering raw ADC samples between acquisition FPGA and image processing CPU. IC Role / Device Role / Timing Role: Left port accepts burst ADC data at 65 ns ADM rate; right port streams processed frames at 40 ns SRAM rate. Use Value: Enables continuous 12-bit @ 20 MSPS capture without FIFO overflow-leverages dual-port bandwidth asymmetry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1362BV25 | 4K × 16, 25 ns access, 3.3V-only I/O, no per-port voltage independence | Lacks VDDIOL/VDDIOR separation; requires external level shifters for mixed-voltage designs | Choose for legacy 3.3V systems prioritizing speed over power or voltage flexibility |
| Renesas R1EX24002AS | 4K × 16, 70 ns access, 1.8V core only, no ADM mode or IRR/ODR registers | Missing hardware mailbox (INTL/INTR) and input capture (IRR); requires software-managed synchronization | Choose for cost-sensitive applications where arbitration and interrupt offload are not required |
Compared with CY7C1362BV25 and R1EX24002AS, IDT70P249L65BYGI uniquely delivers per-port I/O voltage control, integrated mailbox interrupts, and configurable ADM/SRAM interfaces-enabling lower system BOM cost and reduced firmware complexity in space-constrained, battery-operated dual-processor systems.
Availability
IDT70P249L65BYGI is available at Aetrix Electronics and suitable for wireless handset design, industrial PLC communication buffers, and medical imaging data pipelines requiring stable component supply across extended product lifecycles.
Supply support for IDT70P249L65BYGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF power solutions for communications and computing markets.
IDT70P249L65BYGI belongs to the IDT70P2xxL low-power dual-port SRAM family, designed specifically for battery-powered wireless handsets and space-constrained embedded systems requiring hardware-arbitrated shared memory.
FAQ
What is the maximum supported I/O voltage for IDT70P249L65BYGI?
IDT70P249L65BYGI supports 1.8V, 2.5V, and 3.0V I/O standards on both ports independently via VDDIOL and VDDIOR pins. Core voltage VDD must be ≤ the selected I/O voltage. This enables direct interfacing with mixed-voltage SoCs without external level shifters-critical for integrating legacy 3.0V peripherals with modern 1.8V baseband processors.
How does the BUSY arbitration logic work in IDT70P249L65BYGI?
IDT70P249L65BYGI uses hardware arbitration with BUSYL and BUSYR outputs to indicate address collisions. When both ports access the same location, tPS = 5 ns determines priority; the non-priority port's BUSY flag asserts, and its write is internally gated. This prevents data corruption and provides a stall signal for external controllers-eliminating need for software arbitration loops in real-time systems.
What are the mailbox interrupt addresses for IDT70P249L65BYGI?
IDT70P249L65BYGI uses FFE (hex) to set INTL and FFF (hex) to set INTR-per datasheet Note 2 and Truth Table III. Writing to FFE with CSR=OER=VIL clears INTL; reading FFF clears INTR. These fixed addresses provide zero-latency inter-processor signaling without address decoding logic, reducing firmware overhead in dual-CPU architectures.
Can IDT70P249L65BYGI operate with different interface modes on each port?
Yes-IDT70P249L65BYGI supports independent mode selection per port via MSELL and MSELR. One port can use ADM (time-multiplexed address/data) to save pins on resource-constrained controllers, while the other uses standard SRAM mode for high-speed FPGA interfacing. This hybrid configuration is explicitly validated in the functional description and timing diagrams.
What is the significance of the "L" suffix in IDT70P249L65BYGI?
The "L" in IDT70P249L65BYGI denotes the low-power variant of the IDT70P249 family, characterized by 27 mW typical active power and 3.6 µW standby current at 1.8V. It distinguishes this version from higher-power predecessors and confirms compliance with industrial temperature range (–40°C to +85°C) and green packaging requirements specified in the ordering information.
70P249L65BYGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Dual Port, Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 4K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 65ns
- Access Time:
- 65 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-CABGA (6x6)
70P249L65BYGI FAQ
1.How can I place an order for 70P249L65BYGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 70P249L65BYGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 70P249L65BYGI reliable?
The price and inventory of 70P249L65BYGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70P249L65BYGI is usually 5 days.
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5.How can I obtain technical support or documentation for 70P249L65BYGI?
For technical support, including 70P249L65BYGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70P249L65BYGI requirements.
6.How does Aetrix verify that 70P249L65BYGI is sourced from the original manufacturer or authorized distributors?
All 70P249L65BYGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70P249L65BYGI meets industry standards.
7.What is the process for return or replacement of 70P249L65BYGI?
All 70P249L65BYGI units undergo pre-shipment inspection (PSI). If there is an issue with 70P249L65BYGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 70P249L65BYGI part is unused and in its original packaging.
Return procedure for 70P249L65BYGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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