Renesas 70T3319S133BFI8

Overview

70T3319S133BFI8 from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 256K × 18-bit organization (4.5 Mbit), 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and delivers 4.2 ns access time at 133 MHz in industrial temperature range (–40°C to +85°C). It is used in real-time inter-processor communication, network packet buffering, and FPGA co-processor memory interfaces.

For engineers reviewing the 70T3319S133BFI8 datasheet, 70T3319S133BFI8 pinout, 70T3319S133BFI8 application, or 70T3319S133BFI8 equivalent, key selection criteria include simultaneous dual-port access latency, JTAG-compliant boundary scan support, independent port voltage configuration via OPT pins, and industrial-grade reliability with sleep mode current as low as 5 mA.

Technical Context

The 70T3319S133BFI8 implements true dual-port SRAM cells enabling concurrent read/write access to the same memory location from left and right ports. Its fully synchronous architecture uses clocked address, data, and control registers - achieving 1.5 ns setup and 0.5 ns hold times on all inputs at 200 MHz operation (though this variant is rated for 133 MHz).

Each port operates independently with configurable I/O voltage (2.5V or 3.3V) via dedicated OPTL/OPTR pins, separate VDDQ supplies, and dual byte enables (UBL/LBL, UBR/LBR). The device integrates address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), repeat logic, interrupt/collision flags (INTL/INTR, COLL/COLR), and IEEE 1149.1 JTAG test circuitry.

Key Specifications

Pinout & Package

70T3319S133BFI8 is packaged in a 256-pin Ball Grid Array (BGA) with 1.0 mm ball pitch and 17 mm × 17 mm body size. All VDD pins require connection to 2.5 V; VDDQ pins must match OPT pin state (2.5 V if OPT = VSS, 3.3 V if OPT = VDD); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 70T3319S133BFI8 uniquely combines per-port I/O voltage flexibility, IEEE 1149.1 JTAG, pipelined/flow-through mode selection, and hardware collision/interrupt signaling - making it the only option qualified for mixed-voltage, safety-aware, and high-bandwidth deterministic systems.

Availability

70T3319S133BFI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and avionics data concentrators requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 70T3319S133BFI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70T33xx family was designed specifically for high-reliability, real-time dual-ported memory applications requiring deterministic latency, mixed-voltage interoperability, and built-in testability - targeting telecom line cards, FPGA co-processing, and safety-critical embedded controllers.

FAQ

What is the maximum operating frequency and access time for the 70T3319S133BFI8?

The 70T3319S133BFI8 is rated for 133 MHz operation with a maximum clock-to-data valid time (tCD2) of 4.2 ns in pipelined mode. Its minimum cycle time is 7.5 ns. These specifications are guaranteed over the full industrial temperature range (–40°C to +85°C), and the device supports faster grades (e.g., S166, S200) in commercial variants - but the 70T3319S133BFI8 itself is qualified only up to 133 MHz.

Does the 70T3319S133BFI8 support independent voltage selection on each port?

Yes, the 70T3319S133BFI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5 V) configures the left port for 3.3 V I/O levels and requires VDDQL = 3.3 V; setting OPTL = VSS (0 V) configures it for 2.5 V I/O with VDDQL = 2.5 V. The same applies independently to the right port. This allows interfacing with heterogeneous logic families without external level shifters.

How does the collision detection feature work in the 70T3319S133BFI8?

The 70T3319S133BFI8 asserts COLL (left port) or COLR (right port) when both ports attempt simultaneous access to the same memory location. These open-drain outputs signal conflict within 4.2 ns (tCOLS) and remain asserted until the conflict ends. The feature operates independently of read/write state and requires no software polling - enabling hardware-triggered error recovery in real-time systems.

What package type and pin count does the 70T3319S133BFI8 use?

The 70T3319S133BFI8 uses a 256-pin Ball Grid Array (BGA) package with 1.0 mm ball pitch and a 17 mm × 17 mm body size (package code BC256). Pin assignments follow the standard IDT 256-pin BGA layout documented in DSC-5652/11, and A18L/A18R are designated No Connect per datasheet Note 1 - confirming its 256K × 18 organization.

Is JTAG boundary scan supported on the 70T3319S133BFI8?

Yes, the 70T3319S133BFI8 fully supports IEEE 1149.1 JTAG boundary scan with dedicated TCK (10 MHz max), TMS, TDI, TDO, and TRST pins. JTAG operation remains functional even in sleep mode (ZZ asserted), though IDT recommends avoiding boundary scan during sleep for reliability. This enables production test, debug visibility, and in-system verification without intrusive probing.