Renesas 70T3319S166BF

Overview

70T3319S166BF from Integrated Device Technology is a high-speed 256K × 18-bit synchronous dual-port static RAM with true dual-port architecture, 2.5V core supply, selectable 2.5V/3.3V I/O interface per port, and pipelined/flow-through output modes. It supports 166MHz operation (6ns cycle time), delivers 3.6ns clock-to-data-out in pipelined mode, and operates across industrial temperature range (–40°C to +85°C) - enabling real-time data buffering in telecom line cards and FPGA co-processor interconnects.

For engineers reviewing the 70T3319S166BF datasheet, 70T3319S166BF pinout, 70T3319S166BF application, or 70T3319S166BF equivalent, key selection criteria include simultaneous left/right port access timing, dual chip enable depth expansion capability, JTAG-compliant boundary scan support, and independent OPT-pin-controlled I/O voltage selection per port for mixed-voltage system integration.

Technical Context

This device implements fully synchronous dual-port SRAM architecture with register-staged address, data, and control inputs on both ports - enabling minimal 1.7ns setup/0.5ns hold times at 166MHz. Each port features independent pipeline/flow-through mode selection via PL/FTx pins, separate byte enables (UBL/LBL, UBR/LBR), and dedicated address strobe (ADSL/ADSR) and counter control (CNTENL/CNTENR, REPEATL/REPEATR) logic.

It integrates collision detection and interrupt flags (COLL/INTR, COLR/INTR), sleep mode (ZZL/ZZR) with 5mA typical current, and IEEE 1149.1 JTAG test infrastructure. The memory array supports simultaneous read/write to the same location without arbitration, and uses self-timed write for deterministic cycle timing.

Key Specifications

Pinout & Package

70T3319S166BF is housed in a 208-pin fine-pitch Ball Grid Array (BFG208) package measuring 15mm × 15mm × 1.4mm with 0.8mm ball pitch. All VDD pins require 2.5V connection; VDDQ pins must be set to 2.5V or 3.3V based on corresponding OPT pin state (VSS = 2.5V I/O, VDD = 3.3V I/O). Address A18 is no-connect (NC) for this variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV18 and AS7C33256P, the 70T3319S166BF provides superior timing performance (166MHz vs. 133/0MHz), flexible I/O voltage configuration, integrated JTAG, and active power management - making it optimal for new high-speed, mixed-voltage, testable designs.

Availability

70T3319S166BF is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and medical imaging systems requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature operation.

Supply support for 70T3319S166BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70T33xx family was designed specifically for high-bandwidth, low-latency dual-port memory applications in FPGA-based systems, telecom infrastructure, and real-time embedded controllers - emphasizing synchronous timing precision, mixed-voltage interoperability, and built-in testability.

FAQ

What is the maximum operating frequency of the 70T3319S166BF?

The 70T3319S166BF is rated for 166MHz operation (6ns clock cycle time) across the industrial temperature range (–40°C to +85°C). This speed grade is supported in both pipelined and flow-through output modes, with clock-to-data-out timing of 3.6ns (pipelined) and 12ns (flow-through) respectively. Note that 200MHz operation is not available in the BF-208 package variant.

Does the 70T3319S166BF support independent I/O voltage selection on each port?

Yes, the 70T3319S166BF supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL/OPTR to VDD (2.5V) configures the corresponding port for 3.3V I/O signaling with VDDQ = 3.3V; setting to VSS (0V) configures for 2.5V I/O signaling with VDDQ = 2.5V. This enables direct interfacing with mixed-voltage SoCs without external level shifters.

How does the collision detection feature work in the 70T3319S166BF?

The 70T3319S166BF asserts COLL (left port) or COLR (right port) when both ports attempt simultaneous access to the same memory address. These open-drain flags are synchronized to the respective port's clock and provide 3.6ns set/reset timing. They enable software or hardware arbitration - for example, an FPGA can monitor COLR and stall the right-port read until the left-port write completes, ensuring data coherency.

What package options are available for the 70T3319S166BF?

70T3319S166BF is available exclusively in the 208-pin fine-pitch Ball Grid Array (BFG208) package, measuring 15mm × 15mm × 1.4mm with 0.8mm ball pitch. This variant does not use the 256-pin BGA option. The package drawing code BF208(7) identifies the mechanical footprint, and pin A1 is marked by a corner ball omission per standard BGA orientation conventions.

Can the 70T3319S166BF operate in sleep mode while retaining memory contents?

Yes, asserting ZZL and/or ZZR high places the 70T3319S166BF into sleep mode, reducing dynamic current to 5mA typical while retaining all stored data. Static inputs (PL/FTx, OPTx, ZZx) remain functional, and JTAG interface remains active - allowing boundary scan testing during low-power states. Memory contents are preserved across sleep entry/exit without refresh or reinitialization.