Renesas 70T3339S133BC8

Overview

70T3339S133BC8 from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization (9Mb), 2.5V core supply, and independently configurable 2.5V/3.3V I/O interfaces per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and delivers 4.2ns access time at 133MHz in industrial temperature range (–40°C to +85°C). It is used in real-time packet buffering, FPGA co-processor memory, and telecom line-card data exchange.

For engineers reviewing the 70T3339S133BC8 datasheet, 70T3339S133BC8 pinout, 70T3339S133BC8 application, or 70T3339S133BC8 equivalent, key selection criteria include simultaneous dual-port read/write capability, JTAG-compliant boundary scan support, byte-selectable I/O voltage configuration, and guaranteed 133MHz operation in BGA packaging with industrial-grade thermal reliability.

Technical Context

This device implements true dual-port SRAM architecture with independent address, data, and control buses on left and right ports-enabling concurrent access to the same memory location without arbitration. Each port includes dedicated clock, chip enable (CE0/CE1), read/write (R/W), output enable (OE), upper/lower byte enables (UB/LB), and pipeline/flow-through mode selection (PL/FT).

It integrates address strobe (ADS), counter enable (CNTEN), and repeat logic for burst address generation, plus interrupt (INT) and collision detection (COL) flags for inter-port coordination. Power management includes dual-port standby via CE asserts and deep-sleep mode via ZZ pins, with JTAG IEEE 1149.1 compliance for testability.

Key Specifications

Pinout & Package

70T3339S133BC8 is housed in a 256-ball fine-pitch BGA (package code BC256), with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (2.5 V core) and VDDQ (2.5 V/3.3 V I/O) supplies are segregated per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1371DV33-133AXC and AS7C331024B-133BIN, the 70T3339S133BC8 uniquely delivers true dual-port operation with per-port I/O voltage flexibility, industrial-grade 133 MHz timing, and integrated JTAG-making it the sole option for deterministic, mixed-voltage, real-time shared-memory systems.

Availability

70T3339S133BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-accelerated computing, and industrial control systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 70T3339S133BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70T3339S133BC8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency memory sharing between heterogeneous processors, FPGAs, and ASICs in real-time embedded systems.

FAQ

What is the maximum guaranteed operating frequency of the 70T3339S133BC8?

The 70T3339S133BC8 is rated for guaranteed operation at 133 MHz across the full industrial temperature range (–40°C to +85°C). This is validated by its 7.5 ns minimum clock cycle time (tCYC2) and 4.2 ns maximum clock-to-data valid delay (tCD2) in pipelined mode. The "S133" suffix explicitly denotes this speed grade and temperature qualification.

Does the 70T3339S133BC8 support independent I/O voltage selection on each port?

Yes-the 70T3339S133BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VDD (2.5 V) configures the left port for 3.3 V I/O levels with VDDQL = 3.3 V; setting it to VSS (0 V) configures for 2.5 V I/O with VDDQL = 2.5 V. The right port operates identically but independently using OPTR and VDDQR.

How does the address counter function in the 70T3339S133BC8?

The 70T3339S133BC8 implements an internal address counter controlled by CNTENL/CNTENR and ADSL/ADSR. When CNTEN = low, the counter advances on each CLK rising edge regardless of CE or R/W state. ADS loads a new base address; REPEATL/REPEATR resets the counter to that address. This enables automatic burst addressing without external logic-ideal for DMA or streaming applications.

What is the purpose of the ZZL and ZZR pins on the 70T3339S133BC8?

ZZL and ZZR are independent sleep mode control inputs on the 70T3339S133BC8. Asserting either pin high disables dynamic circuitry on its respective port-including clocks, registers, and memory arrays-reducing standby current to ≤15 mA per port. JTAG remains active during sleep, enabling debug access without full power-up.

Can the 70T3339S133BC8 be used in systems requiring IEEE 1149.1 boundary scan?

Yes-the 70T3339S133BC8 fully complies with IEEE 1149.1 (JTAG) standards. It includes dedicated TCK, TMS, TDI, TDO, and TRST pins, supporting boundary scan instruction register access, data register testing, and interconnect verification. This capability is production-tested and documented in the device's BSDL file.