Renesas 70T3339S133BCI8

Overview

70T3339S133BCI8 from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and operates at 133MHz in industrial temperature range (–40°C to +85°C) in a 256-pin BGA package. Used in real-time inter-processor communication and FPGA co-processor buffering.

For engineers reviewing the 70T3339S133BCI8 datasheet, 70T3339S133BCI8 pinout, 70T3339S133BCI8 application, or 70T3339S133BCI8 equivalent, key selection criteria include simultaneous dual-port access latency, JTAG-compliant boundary scan support, sleep mode current (≤15mA), byte-selectable write capability, and industrial-grade thermal reliability up to 85°C ambient.

Technical Context

The 70T3339S133BCI8 implements true dual-port memory cells enabling concurrent read/write access to identical addresses on left and right ports. Its fully synchronous architecture uses clocked address, data, and control registers - delivering 1.5ns setup and 0.5ns hold times on all inputs at 200MHz operation (though this variant is rated for 133MHz).

It supports independent voltage selection per port via OPTL/OPTR pins: setting OPTX to VDD (2.5V) configures that port for 3.3V I/O levels (requiring VDDQX = 3.3V); setting OPTX to VSS (0V) configures 2.5V I/O levels (requiring VDDQX = 2.5V). Sleep mode (ZZL/ZZR) reduces current to ≤15mA while preserving JTAG accessibility.

Key Specifications

Pinout & Package

70T3339S133BCI8 is housed in a 256-pin BGA (package code BC256), with power/ground distributed across 42 VDD, 42 VSS, and 12 VDDQ pins. Signal balls are arranged in a 16×16 grid; pin A1 is located at top-left corner (per standard BGA orientation). All VDD pins require 2.5V; VDDQ pins must match OPT pin configuration (2.5V or 3.3V).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C331024B-133BIN, the 70T3339S133BCI8 uniquely combines 2.5V core efficiency, per-port I/O voltage flexibility, IEEE 1149.1 JTAG, and hardware collision detection - making it the only option supporting deterministic real-time inter-processor synchronization in industrial-temperature environments.

Availability

70T3339S133BCI8 is available at Aetrix Electronics and suitable for high-reliability industrial control, avionics data acquisition, and FPGA-accelerated embedded systems requiring stable component supply across extended product lifecycles.

Supply support for 70T3339S133BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 70T3339S133BCI8 belongs to IDT's high-speed synchronous dual-port SRAM family, engineered specifically for deterministic, low-latency inter-processor communication in real-time embedded systems where concurrent access and hardware-level conflict detection are mandatory.

FAQ

What is the maximum operating frequency of the 70T3339S133BCI8?

The 70T3339S133BCI8 is rated for 133MHz operation in both commercial and industrial temperature ranges. Its pipelined output mode achieves a 7.5ns clock cycle time (tCYC2), while flow-through mode supports a 25ns cycle (tCYC1). This speed grade is validated for the BC256 BGA package and guarantees 4.2ns access time (tCD2) under industrial conditions (–40°C to +85°C).

Does the 70T3339S133BCI8 support independent voltage operation on each port?

Yes, the 70T3339S133BCI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VDD (2.5V) configures the left port for 3.3V I/O levels (requiring VDDQL = 3.3V); setting it to VSS (0V) configures 2.5V I/O (requiring VDDQL = 2.5V). The same applies independently to the right port. This enables mixed-voltage system integration without level shifters.

How does the sleep mode function on the 70T3339S133BCI8?

Sleep mode on the 70T3339S133BCI8 is activated by asserting ZZL and/or ZZR high. It shuts down dynamic circuitry while retaining memory contents and JTAG functionality. Sleep current is ≤15mA (Izz), and recovery requires exactly three clock cycles (tZZRC). Static inputs (PL/FTx, OPTx, ZZx) remain active during sleep, allowing immediate wake-up control without reset sequencing.

What is the purpose of the ADS, CNTEN, and REPEAT signals on the 70T3339S133BCI8?

ADSL/ADSR latches the current address on the rising clock edge and enables the internal address counter. CNTENL/CNTENR enables automatic address increment per clock cycle. REPEATL/REPEATR resets the counter to the last ADS-loaded address - enabling burst transfers to a fixed location. Together, they eliminate CPU address generation overhead during sequential memory accesses.

Can the 70T3339S133BCI8 be used for depth expansion, and how is it implemented?

Yes, the 70T3339S133BCI8 supports depth expansion using dual chip enables (CE0X/CE1X). To expand from 512K×18 to 1M×18, two devices are connected in parallel with identical address/data/control lines, and CE0/CE1 are decoded to select each device. No external logic is needed because CE0=VIL & CE1=VIH enables a port, while CE0=VIH or CE1=VIL deselects it - enabling clean, glitch-free banking.