Renesas 70T3339S133BF8

Overview

70T3339S133BF8 from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and operates at 133MHz across industrial temperature range (−40°C to +85°C) in a 256-pin BGA package. Used in real-time data buffering between asynchronous processor subsystems.

For engineers reviewing the 70T3339S133BF8 datasheet, 70T3339S133BF8 pinout, 70T3339S133BF8 application, or 70T3339S133BF8 equivalent, key selection criteria include simultaneous dual-port access latency, JTAG-compliant boundary scan support, industrial-grade standby current (140–190mA), sleep mode current (5–15mA), and configurable voltage operation per port via OPT pins.

Technical Context

This device implements true dual-port SRAM architecture enabling concurrent read/write access to identical memory locations from independent left and right ports. Each port includes fully synchronous registers on address, data, byte enable, and control inputs-enabling tight timing margins: 1.5ns setup and 0.5ns hold on all inputs at 200MHz.

It supports two distinct output timing modes: pipelined (5ns cycle time, 3.4ns clock-to-data) and flow-through (25ns cycle time, 15ns clock-to-data), selected per port via PL/FTx pins. Collision detection and interrupt flags provide hardware-level arbitration between ports without external logic.

Key Specifications

Pinout & Package

256-pin Ball Grid Array (BC256) package with 17mm × 17mm footprint and 1.0mm ball pitch. Requires decoupling on all VDD (2.5V core), VDDQL/VDDQR (port-specific I/O supplies), and VSS balls. Pin 1 corner marked by top-side laser etch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C331024B-133BIN, the 70T3339S133BF8 uniquely provides per-port selectable I/O voltage, 18-bit data width, hardware collision detection, and true dual-port concurrency-making it irreplaceable in systems requiring deterministic low-latency inter-processor communication without software arbitration.

Availability

70T3339S133BF8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, avionics data concentrators, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for 70T3339S133BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T3339S133BF8 belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic real-time data exchange between asynchronous subsystems in mission-critical embedded systems.

FAQ

What is the maximum operating frequency of the 70T3339S133BF8 in industrial temperature range?

The 70T3339S133BF8 is rated for 133MHz operation across the full industrial temperature range (−40°C to +85°C). This is confirmed in the datasheet's "Maximum Operating Temperature and Supply Voltage" table (Table 04) and AC Electrical Characteristics (Table 11), where S133 speed grade specifies tCYC2 = 7.5ns (133MHz) for pipelined mode. The 200MHz speed grade is commercial-only and not supported in this BF8 package variant.

Does the 70T3339S133BF8 support independent voltage selection for each port's I/O interface?

Yes, the 70T3339S133BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VDD (2.5V) configures the left port for 3.3V I/O levels with VDDQL = 3.3V; setting it to VSS (0V) configures 2.5V I/O levels with VDDQL = 2.5V. The same applies independently to the right port via OPTR and VDDQR. This is documented in Pin Names table (page 5) and DC Operating Conditions (pages 7–8).

How does the sleep mode function on the 70T3339S133BF8, and what is its current draw?

Sleep mode on the 70T3339S133BF8 is activated by asserting ZZL and ZZR high. It disables all dynamic inputs except JTAG signals while retaining memory contents. In industrial temperature range, sleep current is 5–15mA (Table 09, Izz parameter). The device exits sleep mode after three clock cycles (tZZRC = 3 cycles, Table 11), and JTAG remains functional during sleep for debug access.

What package type and pin count does the 70T3339S133BF8 use?

The 70T3339S133BF8 uses a 256-ball BGA package (package code BC256), as specified in the Pin Configuration diagram (page 3) and ordering information. It has a 17mm × 17mm body size with 1.0mm ball pitch. This differs from the 208-pin fpBGA (BF208) variant, which does not support the 200MHz speed grade and has different pin assignments.

Can the 70T3339S133BF8 perform simultaneous read and write operations on the same memory location?

Yes, the 70T3339S133BF8 uses true dual-port SRAM cells that allow simultaneous read and write access to the same memory address-one port reading while the other writes. This is explicitly stated in the Features section (page 2): "True Dual-Port memory cells which allow simultaneous access of the same memory location." No arbitration logic or software coordination is required for this operation.